Abstract: A three-dimensional semiconductor integrated circuit device including an inter-die interface is provided. The device includes a top die including a plurality of micro cells provided on a top surface of the top die, a plurality of micro bumps provided on a bottom surface of the top die, and wiring patterns connecting the plurality of micro cells to the plurality of micro bumps; and a bottom die including a plurality of macro cells provided on a top surface thereof, wherein the plurality of macro cells are electrically connected to the plurality of micro bumps, respectively, wherein a size of a region in which the plurality of micro cells are provided is smaller than a size of a region in which the plurality of micro bumps are provided.

Abstract: An apparatus is provided. The apparatus includes a detector configured to detect a state of the apparatus, and a processor configured to determine a current change degree of an apparatus state between a current point of time and a previous point of time based on a first change value of the apparatus state at the current point of time and a second change value of the apparatus state at the previous point of time earlier than the current point of time, and determine whether change in the apparatus state is normal or abnormal based on a result of comparison between the determined current change degree and an accumulated change degree of the apparatus state accumulated for a predetermined time section before the current point of time.

Abstract: A method for fabricating a semiconductor device include forming devices on a front side of a semiconductor substrate, forming a hydrogen-containing layer on a back side of the semiconductor substrate, forming an outgassing prevention layer over the hydrogen-containing layer, and performing a hydrogen treatment process to diffuse hydrogen, contained in the hydrogen-containing layer, into the semiconductor substrate.

Abstract: A method for fabricating a semiconductor device include forming devices on a front side of a semiconductor substrate, forming a hydrogen-containing layer on a back side of the semiconductor substrate, forming an outgassing prevention layer over the hydrogen-containing layer, and performing a hydrogen treatment process to diffuse hydrogen, contained in the hydrogen-containing layer, into the semiconductor substrate.

Abstract: A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes an epitaxial source/drain junction layer having an insulating film thereunder. The method comprises the step of forming a under-cut under an epitaxial source/drain junction layer so that an insulating film filling the under-cut can be formed.

Abstract: A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes an epitaxial source/drain junction layer having an insulating film thereunder. The method comprises the step of forming a under-cut under an epitaxial source/drain junction layer so that an insulating film filling the under-cut can be formed.