Abstract: A wearable electronic device includes a composite band, a touch-sensor display, a skin sensor, and a course of electrical conductors. The composite band forms a loop having two or more rigid segments and a flexible segment coupled between the rigid segments. The touch-sensor display is arranged in a first of the rigid segments, and a skin sensor is arranged in a second of the rigid segments. The course of electrical conductors runs between the first and second rigid segments, inside the flexible segment.

Abstract: A wearable electronic device includes a composite band, a touch-sensor display, a skin sensor, and a course of electrical conductors. The composite band forms a loop having two or more rigid segments and a flexible segment coupled between the rigid segments. The touch-sensor display is arranged in a first of the rigid segments, and a skin sensor is arranged in a second of the rigid segments. The course of electrical conductors runs between the first and second rigid segments, inside the flexible segment.

Abstract: A method for manufacturing a non-volatile memory cell which can improve the reliability and electrical operation characteristics of a memory cell by making a recess structure of a silicon substrate of a channel region in order to increase capacitance coupling ratio between a control gate and a floating gate is disclosed.

Abstract: The semiconductor device of the present invention is formed by forming a gate electrode in the form of T-shape, forming auxiliary gates which are capacitively coupling with the T-shape gate electrode at undercut portions below both sides of T-shape gate, forming a lightly doped region in the silicon substrate below the auxiliary gate by utilizing a doped oxide film, and forming a heavily doped region connected to a lightly doped region.Accordingly, the present invention can form a short channel length required for a highly integrated circuit device, and greatly improve the operational speed of the device by reducing channel resistance of a lightly doped region of LDD structure.

Abstract: A method for forming an oxide film in a semiconductor device comprises a pre-oxidation process, a main oxidation process and a post-oxidation process. N.sub.2 O gas is used for the pre-oxidation process, a mixed gas of N.sub.2 O gas and NH.sub.3 gas is used for the main oxidation process, and N.sub.2 O gas is used for the post-oxidation process. The insulation characteristics of the oxide film are increased by introducing nitrogen, and amount of introduced nitrogen can be regulated by the controlling of amount of NH.sub.3 gas. Also, the problems encountered when NH.sub.3 gas and N.sub.2 O gas are used separately for the oxidation process can be solved by using of the mixed gas of NH.sub.3 gas and N.sub.2 O gas.

Abstract: A method for forming a gate electrode in a semiconductor device is disclosed. An injection of the holes which moved from the control gate to a dielectric layer is suppressed since the control gate electrode is formed with a double layer structure composed of polysilicon-germanium and polysilicon. Accordingly, the data retention time is increased by increasing the energy barrier for a hole.

Abstract: An apparatus for manufacturing a semiconductor layer using rapid thermal processing, the apparatus comprising: a chamber for processing a wafer; a first microwave source for appling microwave to a center portion of said wafer, being formed on one side of said chamber; and a second microwave source for appling microwave to the edge portion of said wafer, being formed on the other side of said processing chamber; a gas inlet for injecting a processing gas into said processing chamber, being formed in top of said processing chamber; a gas outlet for exhausting said processing gas in said processing chamber.