Abstract: A semiconductor device may comprise: a plurality of lower electrodes which are on a substrate; a first electrode support which is between adjacent lower electrodes and comprises a metallic material; a dielectric layer which is on the lower electrodes and the first electrode support to extend along profiles of the first electrode support and each of the lower electrodes; and an upper electrode which is on the dielectric layer.

Abstract: The present invention relates to a method for preparing an alkali metal ion conductive chalcogenide-based solid electrolyte, a solid electrolyte prepared thereby, and an all-solid-state battery comprising the same.

Abstract: The method for fabricating a capacitor forms a lower electrode of a capacitor over a substrate, adds impurity ions to upper portions of the lateral surfaces; and forms HSG-Si on surfaces of the lower electrode except the upper portions of the lateral surfaces.

Abstract: The method for fabricating a capacitor forms a lower electrode of a capacitor over a substrate, adds impurity ions to upper portions of the lateral surfaces; and forms HSG-Si on surfaces of the lower electrode except the upper portions of the lateral surfaces.

Abstract: The method for fabricating a capacitor forms a lower electrode of a capacitor over a substrate, adds impurity ions to upper portions of the lateral surfaces; and forms HSG-Si on surfaces of the lower electrode except the upper portions of the lateral surfaces.

Abstract: A structure of a lower electrode of a capacitor includes a first lower electrode, second lower electrodes formed at both sides of the first lower electrode and electrically connected to and higher than the first lower electrode, and a Hemispherical Grain-Silicon (HSG-Si) layer formed on a top surface of the first lower electrode and inside walls of the second lower electrodes.

Abstract: A structure of a lower electrode of a capacitor includes a first lower electrode, second lower electrodes formed at both sides of the first lower electrode and electrically connected to and higher than the first lower electrode, and a Hemispherical Grain-Silicon (HSG-Si) layer formed on a top surface of the first lower electrode and inside walls of the second lower electrodes.

Abstract: A method for fabricating a capacitor for a semiconductor device is disclosed. The method includes the steps of forming an insulation film having a contact hole on a substrate, forming a hemispherical grain (HSG) film on an inner surface of the contact hole, forming a lower electrode on a surface of the HSG film, removing the insulation film, forming a dimple on a surface of the lower electrode by removing the HSG film, forming a dielectric film on a surface of the lower electrode, and forming an upper electrode on a surface of the dielectric film, for thereby enhancing a reproducibility of the process and a reliability of a semiconductor device by preventing a lower electrode of a capacitor and a HSG film from being damaged.