Abstract: A method of manufacturing an array type semiconductor laser device. The method includes forming first and second electrodes on lower and upper surfaces of a wafer comprising a plurality of semiconductor laser arrays having a plurality of laser emission regions, and forming a metal bonding layer on the second electrode of the wafer. The method also includes dicing the wafer into the semiconductor laser arrays and mounting each of the individually separated semiconductor laser arrays on a base with the surface of the metal bonding layer in contact with the base. The method further includes melting the metal bonding layer to fix the mounted semiconductor laser array on the base.

Abstract: A wavelength conversion laser apparatus including: a laser light source emitting primary wavelength light; a non-linear optical crystal including: a light waveguide region having a first refractivity, the light waveguide region receiving the primary wavelength light to output as secondary wavelength light; and a clad region adjacent to the light waveguide region, the clad region having a second refractivity lower than the first refractivity, wherein at least the light waveguide region has a periodically domain-inverted structure formed such that a domain-inverted period varies in a direction perpendicular to an incident axis of the primary wavelength light; and a mover moving the non-linear optical crystal to change the domain-inverted period on a path where the primary wavelength light incident on the light waveguide region passes.

Abstract: In a high power semiconductor laser device, first and second conductivity type clad layers are provided. An active layer is interposed between the first and second conductivity type clad layers. A first optical guide layer is disposed between the first conductivity type clad layer and the active layer. A second optical guide layer is disposed between the second conductivity clad layer and the active layer. Also, an intentionally undoes optical loss confinement region is formed in a portion of at least one of the first and second conductivity type clad layers overlapping laser beam distribution.

Abstract: A wavelength conversion laser device includes a laser light source for emitting a first wavelength light, a nonlinear optical crystal for converting the first wavelength light into a second wavelength light, and a nonlinear optical crystal rotator for rotating the nonlinear optical crystal so as to change an incident angle of the first wavelength light into the nonlinear optical crystal. The device also includes a nonlinear optical crystal rotation driving controller for controlling a rotation amount of the rotator in accordance with an output change of the second wavelength light so that the nonlinear optical crystal has phase matching with the first wavelength light. The device further includes a light exit position adjustor for compensating an exit position change of the second wavelength light in accordance with the incident angle change of the first wavelength light so that the second wavelength light is outputted in a predetermined exit position.

Abstract: In a wavelength conversion laser device, a laser light source emits first wavelength light. A non-linear optical crystal converts the first wavelength light into second wavelength light. A rotational driver rotates the non-linear optical crystal so as to alter an incidence angle of the first wavelength light with respect to the non-linear optical crystal. A rotational driving controller detects a portion of an output of the second wavelength light, generates a rotational control signal of the non-linear optical crystal in accordance with a change in the output, and transmits the rotational control signal to the rotational driver. A beam location maintaining mirror retroreflects the second wavelength light, outputted from the non-linear optical crystal, along a substantially same path as that of the first wavelength light. Also, an output beam distributor guides the retroreflected second wavelength light in a desired output direction.

Abstract: A wavelength conversion laser apparatus including: a laser light source emitting primary wavelength light; a non-linear optical crystal including: a light waveguide region having a first refractivity, the light waveguide region receiving the primary wavelength light to output as secondary wavelength light; and a clad region adjacent to the light waveguide region, the clad region having a second refractivity lower than the first refractivity, wherein at least the light waveguide region has a periodically domain-inverted structure formed such that a domain-inverted period varies in a direction perpendicular to an incident axis of the primary wavelength light; and a mover moving the non-linear optical crystal to change the domain-inverted period on a path where the primary wavelength light incident on the light waveguide region passes.

Abstract: A wavelength conversion laser device includes a laser light source for emitting a first wavelength light, a nonlinear optical crystal for converting the first wavelength light into a second wavelength light, and a nonlinear optical crystal rotator for rotating the nonlinear optical crystal so as to change an incident angle of the first wavelength light into the nonlinear optical crystal. The device also includes a nonlinear optical crystal rotation driving controller for controlling a rotation amount of the rotator in accordance with an output change of the second wavelength light so that the nonlinear optical crystal has phase matching with the first wavelength light. The device further includes a light exit position adjustor for compensating an exit position change of the second wavelength light in accordance with the incident angle change of the first wavelength light so that the second wavelength light is outputted in a predetermined exit position.

Abstract: In a wavelength conversion laser device, a laser light source emits first wavelength light. A non-linear optical crystal converts the first wavelength light into second wavelength light. A rotational driver rotates the non-linear optical crystal so as to alter an incidence angle of the first wavelength light with respect to the non-linear optical crystal. A rotational driving controller detects a portion of an output of the second wavelength light, generates a rotational control signal of the non-linear optical crystal in accordance with a change in the output, and transmits the rotational control signal to the rotational driver. A beam location maintaining mirror retroreflects the second wavelength light, outputted from the non-linear optical crystal, along a substantially same path as that of the first wavelength light. Also, an output beam distributor guides the retroreflected second wavelength light in a desired output direction.

Abstract: A method of manufacturing an array type semiconductor laser device. The method includes forming first and second electrodes on lower and upper surfaces of a wafer comprising a plurality of semiconductor laser arrays having a plurality of laser emission regions, and forming a metal bonding layer on the second electrode of the wafer. The method also includes dicing the wafer into the semiconductor laser arrays and mounting each of the individually separated semiconductor laser arrays on a base with the surface of the metal bonding layer in contact with the base. The method further includes melting the metal bonding layer to fix the mounted semiconductor laser array on the base.

Abstract: In a high power semiconductor laser device, first and second conductivity type clad layers are provided. An active layer is interposed between the first and second conductivity type clad layers. A first optical guide layer is disposed between the first conductivity type clad layer and the active layer. A second optical guide layer is disposed between the second conductivity clad layer and the active layer. Also, an intentionally undoped optical loss confinement region is formed in a portion of at least one of the first and second conductivity type clad layers overlapping laser beam distribution.