Abstract: Disclosed is a method of manufacturing an intraocular pressure sensor that is put into an eyeball of a patient and measures the intraocular pressure, the method comprising: preparing a first substrate; depositing a base film on the bottom of the first substrate; exposing the top of the base film by etching the first substrate; applying epoxy onto the center of the exposed base film; disposing the first electrode at the epoxy-applied portion on the base film; preparing a second substrate; depositing a support film onto the second substrate; forming a second electrode on the support film; exposing the bottom of the support film by etching the second substrate; and disposing the second substrate onto the first substrate.

Abstract: Provided are a biocompatible pressure sensor which can be implanted into a body to wirelessly measure an internal pressure of the body outside the body, and a method of manufacturing the biocompatible pressure sensor. The biocompatible pressure sensor includes a coil inductor, a capacitor electrically connected with the coil inductor to constitute an LC resonant circuit together with the coil inductor, a flexible membrane disposed while being spaced apart from the coil inductor with an internal space interposed therebetween and surrounded by a housing, and a pressure displacement member fixed to one surface of the flexible membrane facing the coil inductor. The flexible membrane is transformed by external pressure to change a distance between the coil inductor and the pressure displacement member.

Abstract: Disclosed is a transformer using a symmetrical printing pattern which includes: a substrate; a plurality of first printing lines printed at predetermined distances on the substrate; a plurality of second printing lines printed at predetermined distances on the substrate; first bonding wires connecting the first printing lines; and second bonding wires connecting the second printing lines, in which the first printing lines and the second printing lines are printed in a symmetrical printing pattern, respectively, on the substrate, and the first bonding wires and the second bonding wires are formed symmetrically, respectively.

Abstract: Disclosed is a method of manufacturing an intraocular pressure sensor that is put into an eyeball of a patient and measures the intraocular pressure, the method comprising: preparing a first substrate; depositing a base film on the bottom of the first substrate; exposing the top of the base film by etching the first substrate; applying epoxy onto the center of the exposed base film; disposing the first electrode at the epoxy-applied portion on the base film; preparing a second substrate; depositing a support film onto the second substrate; forming a second electrode on the support film; exposing the bottom of the support film by etching the second substrate; and disposing the second substrate onto the first substrate.

Abstract: Disclosed is a transformer using a symmetrical printing pattern which includes: a substrate; a plurality of first printing lines printed at predetermined distances on the substrate; a plurality of second printing lines printed at predetermined distances on the substrate; first bonding wires connecting the first printing lines; and second bonding wires connecting the second printing lines, in which the first printing lines and the second printing lines are printed in a symmetrical printing pattern, respectively, on the substrate, and the first bonding wires and the second bonding wires are formed symmetrically, respectively.

Abstract: A predecoder control circuit outputs a first and a second predecoder control signals of a pulse type without outputs of a first and second predecoder level signals so that an error generated by overlapping of the predecoder address signals can be prevented.

Abstract: A semiconductor memory device has, among other things, a row buffer. The semiconductor memory device includes a memory cell array for storing data, the row buffer for storing data of a row of the memory cell array, and a state machine for controlling the semiconductor memory device. The semiconductor memory device stores data of the row determined by an inputted address signal from the memory cell array in the row buffer when a predetermined external command is inputted from the external, and outputs a part of the data according to the address signal from the row buffer to the external in a predetermined delay time.

Abstract: A predecoder control circuit outputs a first and a second predecoder control signals of a pulse type without outputs of a first and second predecoder level signals so that an error generated by overlapping of the predecoder address signals can be prevented.

Abstract: Disclosed is a semiconductor memory device having row buffer. The disclosed comprises: a memory cell array for storing data; a row buffer for storing data of a row of the memory cell array; and a state machine for controlling the semiconductor memory device to firstly store data of the row determined by an inputted address signal from the memory cell array in the row buffer when a predetermined external command is inputted from the external, and then to output a part of the data according to the address signal from the row buffer to the external in a predetermined delay time.

Abstract: A high voltage generator provides a high voltage signal for compensating a threshold voltage loss in a semiconductor memory device. The high voltage generator includes: a level detection unit for detecting a voltage level of the high voltage signal to generate a high voltage enable signal when the voltage level of the high voltage signal reaches a predetermined target value; an oscillation unit, in response to the high voltage enable signal, for generating a plurality of clocks, the clocks including a first to a fourth clocks; a high-voltage charge pump unit, in response to the clocks, for increasing a voltage level of an external power signal to generate the high voltage signal to a high voltage node; and a power-on precharging unit, in response to a control signal, for initializing the high voltage node to a predetermined level.

Abstract: A digital demodulator which is capable of simplifying an application specific integrated circuit (ASIC) of a demodulator using a combined sampling technique.

Abstract: A high voltage generator provides a high voltage signal for compensating a threshold voltage loss in a semiconductor memory device. The high voltage generator includes: a level detection unit for detecting a voltage level of the high voltage signal to generate a high voltage enable signal when the voltage level of the high voltage signal reaches a predetermined target value; an oscillation unit, in response to the high voltage enable signal, for generating a plurality of clocks, the clocks including a first to a fourth clocks; a high-voltage charge pump unit, in response to the clocks, for increasing a voltage level of an external power signal to generate the high voltage signal to a high voltage node; and a power-on precharging unit, in response to a control signal, for initializing the high voltage node to a predetermined level.

Abstract: An apparatus and a method for converting a video signal in the scanning line order.