Abstract: A 1,1,1-tris(organoamino)disilane compound and a method of preparing the 1,1,1-tris(organoamino)disilane compound are disclosed. The method comprises aminating a 1,1,1-trihalodisilane with an aminating agent comprising an organoamine compound to give a reaction product comprising the 1,1,1-tris(organoamino)disilane compound, thereby preparing the 1,1,1-tris(organoamino)disilane compound. A film-forming composition is also disclosed. The film-forming composition comprises the 1,1,1-tris(organoamino)disilane compound. A film formed with the film-forming composition, and a method of forming the film, are also disclosed. The method of forming the film comprises subjecting the film-forming composition comprising the 1,1,1-tris(organoamino)disilane compound to a deposition condition in the presence of a substrate, thereby forming the film on the substrate.

Abstract: A 1,1,1-tris(organoamino)disilane compound and a method of preparing the 1,1,1-tris(organoamino)disilane compound are disclosed. The method comprises aminating a 1,1,1-trihalodisilane with an aminating agent comprising an organoamine compound to give a reaction product comprising the 1,1,1-tris(organoamino)disilane compound, thereby preparing the 1,1,1-tris(organoamino)disilane compound. A film-forming composition is also disclosed. The film-forming composition comprises the 1,1,1-tris(organoamino)disilane compound. A film formed with the film-forming composition, and a method of forming the film, are also disclosed. The method of forming the film comprises subjecting the film-forming composition comprising the 1,1,1-tris(organoamino)disilane compound to a deposition condition in the presence of a substrate, thereby forming the film on the substrate.

Abstract: A 1,1,1-tris(organoamino)disilane compound and a method of preparing the 1,1,1-tris(organoamino)disilane compound are disclosed. The method comprises aminating a 1,1,1-trihalodisilane with an aminating agent comprising an organoamine compound to give a reaction product comprising the 1,1,1-tris(organoamino)disilane compound, thereby preparing the 1,1,1-tris(organoamino)disilane compound. A film-forming composition is also disclosed. The film-forming composition comprises the 1,1,1-tris(organoamino)disilane compound. A film formed with the film-forming composition, and a method of forming the film, are also disclosed. The method of forming the film comprises subjecting the film-forming composition comprising the 1,1,1-tris(organoamino)disilane compound to a deposition condition in the presence of a substrate, thereby forming the film on the substrate.

Abstract: A method of forming a film on a substrate is disclosed. The method comprises: heating a thiodisilane according to formula (I) (R1aR1bR1cCS)s(R22N)n(Si—Si)XxHh (I) in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give a silicon-containing film disposed on the substrate, wherein: subscript s, n, x, h and R1a, R1b, R1c, R22, and X are as described herein.

Abstract: Thio(di)silanes comprising a thiosilane of formula (A): (R1aR1bR1cCS)s(Si)XxHh (A) wherein subscript s is from 2 to 4 or a thiodisilane of formula (I): (R1aR1bR1cCS)s(R22N)(Si—Si)XxHh (I) wherein subscript s is from 1 to 6, and wherein R1a, R1b, R1c, R2, X and subscripts n, x and h are defined herein. Also compositions comprising same, methods of making and using same, intermediates useful in synthesis of same, films and materials prepared therefrom.

Abstract: Disclosed herein are chlorodisazanes; silicon-heteroatom compounds synthesized therefrom; devices containing the silicon-heteroatom compounds; methods of making the chlorodisilazanes, the silicon-heteroatom compounds, and the devices; and uses of the chlorodisilazanes, silicon-heteroatom compounds, and devices.

Abstract: The present disclosure includes a composition for forming a silicon-containing film on a substrate, comprising: a silicon precursor and a nitrogen precursor. The silicon-containing film is an elemental silicon film, a silicon carbon film, a silicon nitrogen film, or a silicon oxygen film. The substrate is a semiconductor material. The silicon precursor comprises trichlorodisilane. The trichlorodisilane is 1,1,1-trichlorodisilane.

Abstract: Disclosed is a Silicon Precursor Compound for deposition, the Silicon Precursor Compound comprising trichlorodisilane; a composition for film forming, the composition comprising the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, nitrogen precursor, and oxygen precursor; a method of forming a silicon-containing film on a substrate using the Silicon Precursor Compound, and the silicon-containing film formed thereby.

Abstract: A method for making tris(disilanyl)amine. The method comprises steps of: (a) contacting a disilanyl(alkyl)amine with ammonia to make bis(disilanyl)amine; and (b) allowing bis(disilanyl)amine to produce tris(disilanyl)amine and ammonia.

Abstract: A 1,1,1-tris(organoamino)disilane compound and a method of preparing the 1,1,1-tris(organoamino)disilane compound are disclosed. The method comprises aminating a 1,1,1-trihalodisilane with an aminating agent comprising an organoamine compound to give a reaction product comprising the 1,1,1-tris(organoamino)disilane compound, thereby preparing the 1,1,1-tris(organoamino)disilane compound. A film-forming composition is also disclosed. The film-forming composition comprises the 1,1,1-tris(organoamino)disilane compound. A film formed with the film-forming composition, and a method of forming the film, are also disclosed. The method of forming the film comprises subjecting the film-forming composition comprising the 1,1,1-tris(organoamino)disilane compound to a deposition condition in the presence of a substrate, thereby forming the film on the substrate.

Abstract: An aged polymeric silsesquioxane comprising a product of heating a cured polymeric silsesquioxane of formula (I) (see specification) at a temperature of from 460° to 700° C., a formulation comprising the aged polymeric silsesquioxane and at least one additional constituent, methods of making and using the aged polymeric silsesquioxane, and manufactured articles and devices containing the aged polymeric silsesquioxane.

Abstract: A method of forming a film on a substrate is disclosed. The method comprises: heating a thiodisilane according to formula (I) (R1aR1bR1cCS)s(R22N)n(Si—Si)XxHh (I) in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give a silicon-containing film disposed on the substrate, wherein: subscript s, n, x, h and R1a, R1b, R1c, R22, and X are as described herein.

Abstract: Thio(di)silanes comprising a thiosilane of formula (A): (R1aR1bR1cCS)s(Si)XxHh (A) wherein subscript s is from 2 to 4 or a thiodisilane of formula (I): (R1aR1bR1cCS)s(R22N)(Si—Si)XxHh (I) wherein subscript s is from 1 to 6, and wherein R1a, R1b, R1c, R2, X and subscripts n, x and h are defined herein. Also compositions comprising same, methods of making and using same, intermediates useful in synthesis of same, films and materials prepared therefrom.

Abstract: Disclosed herein are chlorodisazanes; silicon-heteroatom compounds synthesized therefrom; devices containing the silicon-heteroatom compounds; methods of making the chlorodisilazanes, the silicon-heteroatom compounds, and the devices; and uses of the chlorodisilazanes, silicon-heteroatom compounds, and devices.

Abstract: Disclosed is a Silicon Precursor Compound for deposition, the Silicon Precursor Compound comprising trichlorodisilane; a composition for film forming, the composition comprising the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, nitrogen precursor, and oxygen precursor; a method of forming a silicon-containing film on a substrate using the Silicon Precursor Compound, and the silicon-containing film formed thereby.

Abstract: Disclosed is a Silicon Precursor Compound for deposition, the Silicon Precursor Compound comprising a compound which is a disilane and which comprises at least one chloro group, at least one dialkylamino group and at least one hydrido group. A composition for film forming is also disclosed, the composition comprising the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, a nitrogen precursor, and an oxygen precursor. Further disclosed is a process of synthesizing the Silicon Precursor Compound; a method of forming a silicon-containing film on a substrate using the Silicon Precursor Compound; the silicon-containing film formed thereby; and a method of forming the Silicon Precursor Compound.

Abstract: An aged polymeric silsesquioxane comprising a product of heating a cured polymeric silsesquioxane of formula (I) (see specification) at a temperature of from 460° to 700° C., a formulation comprising the aged polymeric silsesquioxane and at least one additional constituent, methods of making and using the aged polymeric silsesquioxane, and manufactured articles and devices containing the aged polymeric silsesquioxane.

Abstract: A method for making tris(disilanyl)amine. The method comprises steps of: (a) contacting a disilanyl(alkyl)amine with ammonia to make bis(disilanyl)amine; and (b) allowing bis(disilanyl)amine to produce tris(disilanyl)amine and ammonia.

Abstract: A method of controlling the crystallinity of a silicon powder may include heating a reactor to a temperature of no more than 650° C., and flowing a feed gas comprising silane and a carrier gas into the reactor at a molar gas flux of from about 5 mol/min/m2 to about 25 mol/min/m2. The silane decomposes to form a silicon powder having a controlled crystallinity and comprising non-crystalline silicon. According to another embodiment, a method of controlling the crystallinity of a silicon powder may include flowing a feed gas comprising silane and a carrier gas into a heated reactor at a molar gas flux of from about 5 mol/min/m2 to about 25 mol/min/m2, and maintaining an internal reactor pressure of about 2 atm or less during the flowing of the feed gas into the heated reactor. The silane decomposes to form a silicon powder having a controlled crystallinity and comprising non-crystalline silicon.

Abstract: An electrode composition comprises a silicon powder comprising non-crystalline and crystalline silicon, where the crystalline silicon is present in the silicon powder at a concentration of no more than about 20 wt. %. An electrode for an electrochemical cell comprises an electrochemically active material comprising non-crystalline silicon and crystalline silicon, where the non-crystalline silicon and the crystalline silicon are present prior to cycling of the electrode. A method of controlling the crystallinity of a silicon powder includes heating a reactor to a temperature of no more than 650° C. and flowing a feed gas comprising silane and a carrier gas into the reactor while maintaining an internal reactor pressure of about 2 atm or less. The silane decomposes to form a silicon powder having a controlled crystallinity and comprising non-crystalline silicon.