Abstract: Provided is a display device comprising at least one sensing pixel including a sensing pixel circuit, a sensing unit including sensing circuit, and a temperature output unit to calculate a temperature of the display panel based on the sensing data. The sensing data is generated from a sensing pixel including a driving transistor in which a current generated according to temperature varies, and a temperature is measured from the sensing data.

Abstract: A dual release actuator for a vehicle seat includes a motor, a cable carrier configured to receive power of the motor, thereby rotating to selectively pull one of two different cables, a Hall sensor to sense rotation of the motor, and a controller configured to count a sensing pulse of the Hall sensor for controlling rotation of the motor.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: An embodiment of the present invention relates to a cylindrical secondary battery in which a positive electrode terminal is adhered and fixed to a cylindrical can by an insulating sheet, and thus sealing between the cylindrical can and the positive electrode terminal can be facilitated due to an increased contact area.

Abstract: A cylindrical secondary battery includes: an electrode assembly including a first electrode plate and a second electrode plate; a cylindrical case having a disk-shaped top portion and a side portion extending from the top portion, the cylindrical case accommodating the electrode assembly; a cathode terminal extending through the top portion and insulated therefrom; a first current collector plate electrically connected to the first electrode plate and the cathode terminal; a second current collector plate electrically connected to the second electrode plate and the side portion of the cylindrical case; a cap plate coupled to the side portion and insulated therefrom; and an insulation tape between the top portion of the cylindrical case and the first current collector plate and covering the first current collector plate.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: An afterimage compensator includes: a logo detector configured to detect a logo area including a logo image displayed in a display panel and a logo background image included in a preset range at the periphery of the logo image, based on input image data; a blurring determiner configured to determine a blurring area corresponding to the logo image, using the logo image and the logo background image; and an image corrector configured to blur the logo image, based on the blurring area.

Abstract: A cylindrical secondary battery and a manufacturing method of a secondary battery are provided. A manufacturing method of a cylindrical secondary battery includes: winding an electrode assembly to expose a first electrode uncoated portion and a second electrode uncoated portion to opposite ends in a longitudinal direction; bending at least some portions of the first electrode uncoated portion and the second electrode uncoated portion of the electrode assembly in a direction by pressing the first electrode uncoated portion and the second electrode uncoated portion; welding electrode collector plates to ends of the bent first and second electrode uncoated portions; and inserting and sealing the electrode assembly into a cylindrical case.

Abstract: A key-value storage device includes a non-volatile memory and a controller. The key-value storage device is configured to communicate with a host and includes a controller and a non-volatile memory. The controller is configured to receive, from the host, a first command including a key, a first chunk among multiple chunks included in a value corresponding to the key, and a first chunk index corresponding to the first chunk. The controller is configured to store mapping information of the first chunk in a mapping table based on the key and the first chunk index. The non-volatile memory is configured to store the key and the first chunk based on the mapping information.

Abstract: An operation method of a storage device, which includes a nonvolatile memory device, includes receiving a first key-value (KV) command including a first key from an external host device; transmitting a first value corresponding to the first key from the nonvolatile memory device to the external host device as first user data, in response to the first KV command; receiving a second KV command including a second key, from the external host device; and performing a first administrative operation based on a second value corresponding to the second key, in response to the second KV command. The first KV command and the second KV command are KV commands of a same type.

Abstract: Provided is a storage device including a non-volatile memory including a first memory block and a second memory block different from the first memory block, and a memory controller configured to receive, from a host, a first write mode command corresponding to the first memory block and a second write mode command corresponding to the second memory block, control the first memory block to perform a first write operation according to the first write mode command, and control the second memory block to perform a second write operation according to the second write mode command, both the first write operation and the second write operation being sequential write operations.

Abstract: An operation method of a storage device, which includes a nonvolatile memory device, includes receiving a first key-value (KV) command including a first key from an external host device; transmitting a first value corresponding to the first key from the nonvolatile memory device to the external host device as first user data, in response to the first KV command; receiving a second KV command including a second key, from the external host device; and performing a first administrative operation based on a second value corresponding to the second key, in response to the second KV command. The first KV command and the second KV command are KV commands of a same type.

Abstract: A key-value storage device includes a non-volatile memory and a controller. The key-value storage device is configured to communicate with a host and includes a controller and a non-volatile memory. The controller is configured to receive, from the host, a first command including a key, a first chunk among multiple chunks included in a value corresponding to the key, and a first chunk index corresponding to the first chunk. The controller is configured to store mapping information of the first chunk in a mapping table based on the key and the first chunk index. The non-volatile memory is configured to store the key and the first chunk based on the mapping information.

Abstract: An operation method of a storage device, which includes a nonvolatile memory device, includes receiving a first key-value (KV) command including a first key from an external host device; transmitting a first value corresponding to the first key from the nonvolatile memory device to the external host device as first user data, in response to the first KV command; receiving a second KV command including a second key, from the external host device; and performing a first administrative operation based on a second value corresponding to the second key, in response to the second KV command. The first KV command and the second KV command are KV commands of a same type.

Abstract: A key-value storage device includes a non-volatile memory and a controller. The key-value storage device is configured to communicate with a host and includes a controller and a non-volatile memory. The controller is configured to receive, from the host, a first command including a key, a first chunk among multiple chunks included in a value corresponding to the key, and a first chunk index corresponding to the first chunk. The controller is configured to store mapping information of the first chunk in a mapping table based on the key and the first chunk index. The non-volatile memory is configured to store the key and the first chunk based on the mapping information.

Abstract: Provided is a storage device including a non-volatile memory including a first memory block and a second memory block different from the first memory block, and a memory controller configured to receive, from a host, a first write mode command corresponding to the first memory block and a second write mode command corresponding to the second memory block, control the first memory block to perform a first write operation according to the first write mode command, and control the second memory block to perform a second write operation according to the second write mode command, both the first write operation and the second write operation being sequential write operations.

Abstract: Disclosed is a storage device, which includes a nonvolatile memory device, and a controller that controls the nonvolatile memory device. In response to a first command, a barrier command, and a second command being received from an external host device, the controller supports an order guarantee between the first command and the second command. Each of the first command and the second command is selected from two or more different commands. In response to a request from the external host device, the controller circuitry is configured to provide the external host device with a device descriptor associated with the ordering.

Abstract: A key-value storage device includes a nonvolatile memory device and a memory controller. The nonvolatile memory device stores a value, a key which is referenced to identify the value, and key age data which are changed based on an erase operation of the value, and the memory controller that receives an erase command directing erasing of the value corresponding to the key from a host, generates hash data, a size of which is smaller than a size of the key, in response to the erase command, and transmits a complete message to the host. The memory controller accesses the key and the key age data stored in the nonvolatile memory device based on the hash data and erases the value based on the accessed key and the accessed key age data during an idle time after the transmission of the complete message.

Abstract: A key-value storage device includes a nonvolatile memory device and a memory controller. The nonvolatile memory device stores a value, a key which is referenced to identify the value, and key age data which are changed based on an erase operation of the value, and the memory controller that receives an erase command directing erasing of the value corresponding to the key from a host, generates hash data, a size of which is smaller than a size of the key, in response to the erase command, and transmits a complete message to the host. The memory controller accesses the key and the key age data stored in the nonvolatile memory device based on the hash data and erases the value based on the accessed key and the accessed key age data during an idle time after the transmission of the complete message.

Abstract: A key-value storage device includes a nonvolatile memory device and a memory controller. The nonvolatile memory device stores a value, a key which is referenced to identify the value, and key age data which are changed based on an erase operation of the value, and the memory controller that receives an erase command directing erasing of the value corresponding to the key from a host, generates hash data, a size of which is smaller than a size of the key, in response to the erase command, and transmits a complete message to the host. The memory controller accesses the key and the key age data stored in the nonvolatile memory device based on the hash data and erases the value based on the accessed key and the accessed key age data during an idle time after the transmission of the complete message.