Abstract: A nonvolatile memory device includes a first memory cell array, a first bi-directional multiplexer, a first register, a second register, a first I/O pad and a second I/O pad. The first memory cell array stores first data. The first bi-directional multiplexer receives the first data and distributes the first data into first sub-data and second sub-data. The first register stores first sub-data from the first bi-directional multiplexer. The second register stores second sub-data from a second bi-directional multiplexer. The first I/O pad outputs the first sub-data from the first register to outside. The second I/O pad outputs the second sub-data from the second register to the outside.

Abstract: A nonvolatile memory device includes a first memory cell array, a first bi-directional multiplexer, a first register, a second register, a first I/O pad and a second I/O pad. The first memory cell array stores first data. The first bi-directional multiplexer receives the first data and distributes the first data into first sub-data and second sub-data. The first register stores first sub-data from the first bi-directional multiplexer. The second register stores second sub-data from a second bi-directional multiplexer. The first I/O pad outputs the first sub-data from the first register to outside. The second I/O pad outputs the second sub-data from the second register to the outside.

Abstract: A digital temperature detection circuit adapted for use with a semiconductor device is disclosed. The digital temperature detection circuit comprises a digital temperature generation unit adapted to detect an internal temperature of the semiconductor device, convert the internal temperature into perception data in accordance with a perception data code, and output the perception data. The digital temperature detection circuit further comprises an offset shift unit adapted to shift the perception data in accordance with offset data to thereby generate standard data; and, an offset generation unit adapted to generate the offset data, wherein the offset generation unit is controlled from outside of the digital temperature detection circuit.

Abstract: A digital temperature detection circuit adapted for use with a semiconductor device is disclosed. The digital temperature detection circuit comprises a digital temperature generation unit adapted to detect an internal temperature of the semiconductor device, convert the internal temperature into perception data in accordance with a perception data code, and output the perception data. The digital temperature detection circuit further comprises an offset shift unit adapted to shift the perception data in accordance with offset data to thereby generate standard data; and, an offset generation unit adapted to generate the offset data, wherein the offset generation unit is controlled from outside of the digital temperature detection circuit.

Abstract: A duty cycle correction circuit for use in a semiconductor device, which synchronizes with an external clock and corrects a duty cycle, is provided. The duty cycle correction circuit includes a modulator of an inverter structure having at least one or more transistors. The modulator receives a control signal through a source terminal and a bulk of any one of the transistors and corrects a duty cycle in response to an external clock signal. The duty cycle correction circuit also includes a driver that converts an output signal of the modulator into a full swing level and outputs the converted output signal of the modulator, and a feedback loop that generates the control signal in response to an output signal of the driver.

Abstract: An integrated circuit device includes a substrate and a side-by-side grouping of clock signal lines on the substrate. The side-by-side grouping includes at least three multi-segment clock signal lines that are substantially uniformly capacitively coupled to each other over a majority of their lengths. Electrical jumpers and conductive vias are used to link segments of each clock signal line together and achieve an interwoven relationship of the clock signal lines within the side-by-side grouping.

Abstract: A duty cycle correction circuit for use in a semiconductor device, which synchronizes with an external clock and corrects a duty cycle, is provided. The duty cycle correction circuit includes a modulator of an inverter structure having at least one or more transistors. The modulator receives a control signal through a source terminal and a bulk of any one of the transistors and corrects a duty cycle in response to an external clock signal. The duty cycle correction circuit also includes a driver that converts an output signal of the modulator into a full swing level and outputs the converted output signal of the modulator, and a feedback loop that generates the control signal in response to an output signal of the driver.