Abstract: A silicon precursor compound, a preparation method therefor, a silicon-containing film formation composition containing the silicon precursor compound are disclosed. A method for forming a silicon-containing film by using the silicon-containing film formation composition is also disclosed. The silicon-containing film formation composition contains a silicon precursor compound having a specific structure so that the thickness of a silicon-containing film can be controlled to be very thin through atomic layer deposition (ALD), and, when a silicon-containing composite film is formed by combining an ALD cycle that forms a silicon-containing film and an ALD cycle that forms a film containing another metal, the silicon amount of the silicon-containing composite film can be finely controlled to be in a low range.

Abstract: A silicon precursor compound, a composition for forming a silicon-containing film, wherein the composition contains the compound; and a method for forming a silicon-containing film by using the composition for forming a silicon-containing film are disclosed. The composition for forming a silicon-containing film includes a silicon precursor compound having a specific structure, thus making it possible to achieve the self-limiting film growth of ALD over a wide temperature range of 150° C. to 850° C., control the thickness of the silicon-containing film to be extremely thin and uniform, and form a film having excellent coverage and uniformity even on a substrate having a complex shape, and furthermore, further improve the characteristics of a semiconductor device.

Abstract: A method for forming a silicon-containing film and a silicon-containing film formed by the method are disclosed. The method for forming a silicon-containing film can use a composition for forming a silicon-containing film including a silicon precursor compound having a specific structure to efficiently form a silicon-containing film including a silicon-containing oxide film or a silicon-containing composite metal oxide film at a high temperature of 600° C. or more, control the silicon-containing film to have a thickness and composition of a desired film, and form a silicon-containing film having excellent coverage and uniformity even on a substrate with a complex shape.

Abstract: Provided are a polymer containing a thiophene unit and a thienylenevinylene unit, and an organic field effect transistor and an organic solar cell containing the polymer. The film may be formed by coating a substrate with a polymer containing a thiophene unit and a thienylenevinylene unit using a solution process. Therefore, the production cost may be reduced and a large-scale device may be suitably manufactured since there is no need for an expensive vacuum system to form films. Also, the polymer according to one embodiment of the present invention containing a thiophene unit and a thienylenevinylene unit has very excellent flatness since the thiophene unit is continuously coupled with a vinyl group having excellent flatness. Therefore, the polymer may be useful in further improving the charge mobility since it has high crystallinity caused by the improved ordering property between molecules. Such crystallinity may be further improved by the heat treatment.

Abstract: Provided are a polymer containing a thiophene unit and a thienylenevinylene unit, and an organic field effect transistor and an organic solar cell containing the polymer. The film may be formed by coating a substrate with a polymer containing a thiophene unit and a thienylenevinylene unit using a solution process. Therefore, the production cost may be reduced and a large-scale device may be suitably manufactured since there is no need for an expensive vacuum system to form films. Also, the polymer according to one embodiment of the present invention containing a thiophene unit and a thienylenevinylene unit has very excellent flatness since the thiophene unit is continuously coupled with a vinyl group having excellent flatness. Therefore, the polymer may be useful in further improving the charge mobility since it has high crystallinity caused by the improved ordering property between molecules. Such crystallinity may be further improved by the heat treatment.