Abstract: A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

Abstract: A supercritical drying apparatus and a method of drying a substrate, the apparatus including a drying chamber configured to receive a supercritical fluid and to dry a substrate; a chuck in the drying chamber, the chuck being configured to receive the substrate; and a particle remover in the drying chamber, the particle remover being configured to remove dry particles from the substrate by heating the substrate with radiant heat.

Abstract: A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

Abstract: A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

Abstract: Disclosed are a supercritical process chamber and an apparatus having the same. The process chamber includes a body frame having a protrusion protruding in an upward vertical direction from a first surface of the body frame and a recess defined by the protrusion and the first surface of the body frame; a cover frame; a buffer chamber arranged between the body frame and the cover frame; and a connector. The buffer chamber includes an inner vessel detachably coupled to the body frame providing a chamber space in the recess and an inner cover detachably coupled to the cover frame. The inner cover is in contact with a first surface of the inner vessel enclosing the chamber space from surroundings. The connector couples the body frame and the cover frame having the buffer chamber arranged therebetween such that the enclosed chamber space is transformed into a process space in which the supercritical process is performed.

Abstract: A supercritical drying apparatus and a method of drying a substrate, the apparatus including a drying chamber configured to receive a supercritical fluid and to dry a substrate; a chuck in the drying chamber, the chuck being configured to receive the substrate; and a particle remover in the drying chamber, the particle remover being configured to remove dry particles from the substrate by heating the substrate with radiant heat.

Abstract: Disclosed are a supercritical process chamber and an apparatus having the same. The process chamber includes a body frame having a protrusion protruding in an upward vertical direction from a first surface of the body frame and a recess defined by the protrusion and the first surface of the body frame; a cover frame; a buffer chamber arranged between the body frame and the cover frame; and a connector. The buffer chamber includes an inner vessel detachably coupled to the body frame providing a chamber space in the recess and an inner cover detachably coupled to the cover frame. The inner cover is in contact with a first surface of the inner vessel enclosing the chamber space from surroundings. The connector couples the body frame and the cover frame having the buffer chamber arranged therebetween such that the enclosed chamber space is transformed into a process space in which the supercritical process is performed.

Abstract: A semiconductor device includes a gate spacer defining a trench. The trench includes a first part and a second part sequentially positioned on a substrate. An inner surface of the first part has a slope of an acute angle and an inner surface of the second part has a slope of a right angle or obtuse angle with respect to the substrate. A gate electrode fills at least a portion of the trench.

Abstract: A semiconductor device includes an interlayer insulating layer including a first insulating layer on a substrate, and a plurality of interconnections in the first insulating layer. The interlayer insulating layer includes a first region, and a second region including an air gap. The air gap is defined between a pair of the interconnections in the second region. A top surface of the first insulating layer of the first region is lower than a top surface of at least one of the interconnections in the first region.

Abstract: A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

Abstract: A semiconductor device includes an interlayer insulating layer including a first insulating layer on a substrate, and a plurality of interconnections in the first insulating layer. The interlayer insulating layer includes a first region, and a second region including an air gap. The air gap is defined between a pair of the interconnections in the second region. A top surface of the first insulating layer of the first region is lower than a top surface of at least one of the interconnections in the first region.

Abstract: A method of manufacturing a semiconductor device includes forming grooves in a first dielectric layer on a substrate, the first dielectric layer including a first part between the grooves, forming a first barrier layer and an interconnect layer in each groove, recessing the interconnect layer and the first barrier layer, forming a capping pattern on the recessed interconnect layer, etching at least a portion of the first part by a first etching process, sequentially etching the capping pattern and the at least a portion of the IMD part by a second etching process to form a trench, conformally forming a second barrier layer in the trench and on the recessed interconnection layer, and forming a second dielectric layer on the second barrier layer not to fill the trench such that an air gap is formed in the trench.

Abstract: A semiconductor device includes an interlayer insulating layer including a first insulating layer on a substrate, and a plurality of interconnections in the first insulating layer. The interlayer insulating layer includes a first region, and a second region including an air gap. The air gap is defined between a pair of the interconnections in the second region. A top surface of the first insulating layer of the first region is lower than a top surface of at least one of the interconnections in the first region.

Abstract: A method of manufacturing a semiconductor device includes forming grooves in a first dielectric layer on a substrate, the first dielectric layer including a first part between the grooves, forming a first barrier layer and an interconnect layer in each groove, recessing the interconnect layer and the first barrier layer, forming a capping pattern on the recessed interconnect layer, etching at least a portion of the first part by a first etching process, sequentially etching the capping pattern and the at least a portion of the IMD part by a second etching process to form a trench, conformally forming a second barrier layer in the trench and on the recessed interconnection layer, and forming a second dielectric layer on the second barrier layer not to fill the trench such that an air gap is formed in the trench.

Abstract: A method of manufacturing a semiconductor device includes forming grooves in a first dielectric layer on a substrate, the first dielectric layer including a first part between the grooves, forming a first barrier layer and an interconnect layer in each groove, recessing the interconnect layer and the first barrier layer, forming a capping pattern on the recessed interconnect layer, etching at least a portion of the first part by a first etching process, sequentially etching the capping pattern and the at least a portion of the IMD part by a second etching process to form a trench, conformally forming a second barrier layer in the trench and on the recessed interconnection layer, and forming a second dielectric layer on the second barrier layer not to fill the trench such that an air gap is formed in the trench.

Abstract: A semiconductor device includes an interlayer insulating layer including a first insulating layer on a substrate, and a plurality of interconnections in the first insulating layer. The interlayer insulating layer includes a first region, and a second region including an air gap. The air gap is defined between a pair of the interconnections in the second region. A top surface of the first insulating layer of the first region is lower than a top surface of at least one of the interconnections in the first region.

Abstract: A method of manufacturing a semiconductor device includes forming grooves in a first dielectric layer on a substrate, the first dielectric layer including a first part between the grooves, forming a first barrier layer and an interconnect layer in each groove, recessing the interconnect layer and the first barrier layer, forming a capping pattern on the recessed interconnect layer, etching at least a portion of the first part by a first etching process, sequentially etching the capping pattern and the at least a portion of the IMD part by a second etching process to form a trench, conformally forming a second barrier layer in the trench and on the recessed interconnection layer, and forming a second dielectric layer on the second barrier layer not to fill the trench such that an air gap is formed in the trench.

Abstract: A semiconductor device includes a gate spacer defining a trench. The trench includes a first part and a second part sequentially positioned on a substrate. An inner surface of the first part has a slope of an acute angle and an inner surface of the second part has a slope of a right angle or obtuse angle with respect to the substrate. A gate electrode fills at least a portion of the trench.

Abstract: The present invention relates to a pouch container including a pouch main body to be filled with liquid contents; an inner tube which includes an inserted portion to be inserted in the pouch main body, an inlet portion for putting or withdrawing the liquid contents in or out, and a connecting portion of connecting the inserted portion and the inlet portion, and provides a tubular passage for the liquid contents; and an outer tube which is softer than the inner tube, and surrounds at least one of the connecting portion and the inlet portion. Thus, it is possible to solve problems of inconvenience and prevents damage to a consumer when s/he drinks liquid contents since the inlet portion is partially made of a soft material.

Abstract: A semiconductor device includes a gate spacer defining a trench. The trench includes a first part and a second part sequentially positioned on a substrate. An inner surface of the first part has a slope of an acute angle and an inner surface of the second part has a slope of a right angle or obtuse angle with respect to the substrate. A gate electrode fills at least a portion of the trench.