Abstract: A semiconductor monolithic integrated optical transmitter including a plurality of active layers formed on a semiconductor substrate is disclosed, which comprises: a distributed feedback laser diode including a grating for reflecting light with a predetermined wavelength and a first active layer for oscillating received light from the grating; an electro-absorption modulator including a second active layer for receiving light from the first active layer, wherein the received light intensity is modulated through a change of absorbency in accordance with an applied voltage; an optical amplifier including a third active layer for amplifying received light from the second active layer; a first optical attenuator between the first active layer and the second active layer; and a second optical attenuator between the second active layer and the third active layer.

Abstract: Disclosed is a camera lens assembly for a portable terminal. The camera lens assembly includes a guide plate having an image sensor on a surface thereof; a driving motor which is placed on the other surface of the guide plate; and a driving shaft which extends along an optical axis of the image sensor from the other surface of the guide plate, wherein the driving shaft moves along the optical axis of the image sensor thereby enabling the guide plate and the image sensor move forwards or backwards along the optical axis to control focus when the driving motor operates.

Abstract: An electro-absorptive optical modulator module monolithic-integrated on a semiconductor substrate, which includes a distributed feedback laser having a grating for oscillating light and to output the oscillated light through a first end and a second end of the module. An electro-absorptive modulator modulates a first light output through the first end of the distributed feedback laser, and an optical detector provides detection of a second light output through the second end of the module. The optical detector is formed opposite to the second end of the distributed feedback laser on the semiconductor substrate. A first inner window permits attenuation of the intensity of the second light and electrically insulates the distributed feedback laser and the optical detector from each other, with the first inner window being arranged between the distributed feedback laser and the optical detector.

Abstract: A monolithic integrated semiconductor optical element is disclosed. The semiconductor optical element including a substrate, a first waveguide, formed on the substrate, including a first active layer for generating light, and a semi-insulating, grown on the substrate so as to surround a perimeter of the first waveguide layer, including a window area for diffusing the light outputted from the first waveguide and outputting the diffused light. The semiconductor optical elements also includes at least one second waveguide, formed in the window area close to the first waveguide, including a second active layer for detecting a part of the light diffused by the window area.

Abstract: Disclosed is an optical system of a zoom-camera comprises a plurality of lens groups so that the path of a light can be multi-directionally refracted. The optical system comprises a base member, a first lens group mounted on the base member for refracting a light reflected and incident from an object to a first direction, a second lens group for effecting a zoom function, a third lens group for refracting the light passing through the second lens group to a second direction, a fourth lens group for effecting a zoom function as well as a focusing function while compensating a variation of an image plane caused by the zoom function, and power transmission means for transmitting power for sliding the second and fourth lens groups.

Abstract: A zoom lens includes a first lens group having a negative refracting force, a second lens group having a positive refracting force and being aligned closer to an image surface than the first lens group, and a third lens group aligned closer to the image surface than the second lens group. The distance between first and second lens groups is shortened and the distance between second and third lens groups is lengthened as the zoom lens performs zooming action from a wide angle position to a telephoto position.

Abstract: Disclosed is a shutter device for use with a camera lens assembly. The shutter device includes a shutter base, a shutter blade is rotatably mounted on the shutter base, a magnet movably coupled to the shutter base so as to enable rotation of the shutter blade, and a yoke extending lengthwise while facing the magnet wherein the movement range of the shutter base is limited within a length of the yoke. The zoom-in/zoom-out operation is enabled by moving only the shutter base, thus enabling a compact size fabrication of the camera lens assembly. The shutter blade is easily installed adjacent to a diaphragm, and the operational speed of the shutter blade is controlled by adjusting the structure of an electronic coil.

Abstract: Disclosed is an optical image stabilizer for use with a camera lens assembly. The optical image stabilizer including a fixable substrate; a movable substrate movably disposed on the fixable substrate, a fixable comb structure fixed on the fixable substrate and disposed on the movable substrate, and a movable comb structure disposed on the movable substrate and capable of moving on the fixable substrate with the movable substrate, wherein the movable substrate is moved by an attraction force acting between the fixable comb structure and the movable comb structure, when an electromotive force is applied to the fixable comb structure and the movable comb structure. In the optical image stabilizer, the movable substrate on which an image sensor is disposed and the elements for moving the movable substrate are manufactured using MEMS technology, thereby facilitating downsizing of optical image stabilizers and improving the precision of products.

Abstract: Disclosed is an optical system of a zoom-camera comprises a plurality of lens groups so that the path of a light can be multi-directionally refracted. The optical system comprises a base member, a first lens group mounted on the base member for refracting a light reflected and incident from an object to a first direction, a second lens group for effecting a zoom function, a third lens group for refracting the light passing through the second lens group to a second direction, a fourth lens group for effecting a zoom function as well as a focusing function while compensating a variation of an image plane caused by the zoom function, and power transmission means for transmitting power for sliding the second and fourth lens groups.

Abstract: A photonic integrated device using a reverse-mesa structure and a method for fabricating the same are disclosed. The photonic integrated device includes a first conductive substrate on which a semiconductor laser, an optical modulator, a semiconductor optical amplifier, and a photo detector are integrated, a first conductive clad layer and an active layer sequentially formed on the first conductive substrate in the form of a mesa structure, a second conductive clad layer formed on the active layer in the form of a reverse-mesa structure, an ohmic contact layer formed on the second clad layer in such a manner that the ohmic contact layer has a width narrower than the width of an upper surface of the second conductive clad layer, a current shielding layer filled in a sidewall having a mesa and reverse-mesa structure, and at least one window area formed between the above elements.

Abstract: A semiconductor optical device, which includes a semiconductor substrate, an electro-absorption modulator, and at least one optical device is monolithically integrated on the semiconductor substrate. An insulative layer surrounds the electro-absorption modulator and the optical devices on the semiconductor substrate, at least two metallic pads, one of which being an electrode of the modulator, are formed at a distance from each other on the insulative layer. A plurality of metallic wires are adapted for electrically connecting the electro-absorption modulator to the metallic pads and adjusting a value of inductance of the electro-absorption modulator. The metallic wires are formed on the insulative layer. A dielectric layer formed under the insulative layer provides a minimizing of parasitic capacitance generated in the metallic pads and the metallic wires by being formed under the metallic pads and the metallic wires.

Abstract: An electro-absorptive optical modulator module monolithic-integrated on a semiconductor substrate, which includes a distributed feedback laser having a grating for oscillating light and to output the oscillated light through a first end and a second end of the module. An electro-absorptive modulator modulates a first light output through the first end of the distributed feedback laser, and an optical detector provides detection of a second light output through the second end of the module. The optical detector is formed opposite to the second end of the distributed feedback laser on the semiconductor substrate. A first inner window permits attenuation of the intensity of the second light and electrically insulates the distributed feedback laser and the optical detector from each other, with the first inner window being arranged between the distributed feedback laser and the optical detector.

Abstract: A monolithic integrated semiconductor optical element is disclosed. The semiconductor optical element including a substrate, a first waveguide, formed on the substrate, including a first active layer for generating light, and a semi-insulating, grown on the substrate so as to surround a perimeter of the first waveguide layer, including a window area for diffusing the light outputted from the first waveguide and outputting the diffused light. The semiconductor optical elements also includes at least one second waveguide, formed in the window area close to the first waveguide, including a second active layer for detecting a part of the light diffused by the window area.

Abstract: A semiconductor monolithic integrated optical transmitter including a plurality of active layers formed on a semiconductor substrate is disclosed, which comprises: a distributed feedback laser diode including a grating for reflecting light with a predetermined wavelength and a first active layer for oscillating received light from the grating; an electro-absorption modulator including a second active layer for receiving light from the first active layer, wherein the received light intensity is modulated through a change of absorbency in accordance with an applied voltage; an optical amplifier including a third active layer for amplifying received light from the second active layer; a first optical attenuator between the first active layer and the second active layer; and a second optical attenuator between the second active layer and the third active layer.

Abstract: An optical communication module is disclosed. The optical communication module includes a thermistor, which may be plate shaped, having a positive temperature coefficient. The resistance of the thermistor increases according to an increase of the environmental temperature. The optical communication module also includes a semiconductor chip mounted on the upper surface of the thermistor, and a driving means for applying a predetermined voltage to the thermistor.

Abstract: An integrated optical apparatus is disclosed that integrates at least two optical devices and can achieve electrical and optical insulation between the optical devices. The integrated optical apparatus includes at least two optical devices both equipped with an optical waveguide, and at least one inner window interposed at a region of the optical waveguide between the optical devices. The inner window disconnects the optical waveguides that are located between the optical devices in order to achieve optical/electrical insulation. According to aspects and embodiments of the present invention, production costs can be reduced because it is not required to employ an independent optical isolator separately in order to achieve optical insulation between the respective optical devices, and process times can be reduced because it is not necessary to control an optical coupling between the optical devices.

Abstract: The present invention relates to the all-optical logic AND operation in a SOA (semiconductor optical amplifier)-based Mach-Zehnder interferometer. More particularly, it relates to the technology making feasible ultra high-speed logic operations while maintaining a small size and a low input power by utilizing a cross-phase modulation (XPM) wavelength converter composed of semiconductor optical amplifiers in the form of a Mach-Zehnder interferometer with nonlinear characteristics.

Abstract: The present invention relates to the all-optical logic AND operation in a SOA (semiconductor optical amplifier)-based Mach-Zehnder interferometer. More particularly, it relates to the technology making feasible ultra high-speed logic operations while maintaining a small size and a low input power by utilizing a cross-phase modulation (XPM) wavelength converter composed of semiconductor optical amplifiers in the form of a Mach-Zehnder interferometer with nonlinear characteristics.

Abstract: In order to have a wanted exposure pattern, a specific intensity of light should be irradiated for a certain time interval since the exposing degree of the photoresist depends on the intensity of the incident light. The intensity of the light emitted from a light source such as a conventional laser has the Gaussian distribution in space, and the Gaussian distribution is maintained after passing a conventional lens. And the uniform area is limited to a very narrow area since the exposure pattern is changed with the intensity distribution of the light incident to the photoresist.

Abstract: Disclosed is a method of producing an electron-absorption modulator having a reverse mesa structure. In the electron-absorption modulator, a first clad of a first conductivity type, an active layer of the first conductivity type, a second clad layer of a second conductivity type and an ohmic contact layer of the second conductivity type are formed on a semiconductor substrate of the first conductivity type. Then, a predetermined mask pattern is formed on the ohmic contact layer. Afterwards, the ohmic contact layer is etched by using the mask pattern. Then, the second clad layer and the active layer below the ohmic contact layer are etched in the form of the reverse mesa structure to expose the first clad layer. Then, the first clad layer is etched at a predetermined depth in the form of a mesa structure.