Abstract: A method for preparing a metal powder includes preparing a mixture by mixing a fluoride of a group 1 element, a fluoride of a group 2 element or a transition metal fluoride, with neodymium oxide, boron, iron, and a reducing agent; and heating the mixture at a temperature of 800° C. to 1100° C.

Abstract: A thermoelectric module that has excellent thermal, electric properties, can realize high joining force between thermoelectric elements and an electrode, and can maintain stable joining even at a high temperature.

Abstract: A thermoelectric module including at least a first and a second thermoelectric element comprising a thermoelectric semiconductor; an electrode connecting the first and second thermoelectric elements; and at least a first and a second joining layer, the first joining layer positioned between the first thermoelectric element and the electrode, and the second joining layer positioned between the second thermoelectric element and the electrode; and at least a first and a second barrier layer including an alloy including Cu, Mo and Ti, the first barrier layer positioned between the first thermoelectric element and the first joining layer, and the second barrier layer positioned between the second thermoelectric element and the second joining layer.

Abstract: A thermoelectric module that has excellent thermal, electric properties, can realize high joining force between thermoelectric elements and an electrode, and can maintain stable joining even at a high temperature.

Abstract: A thermoelectric module including at least a first and a second thermoelectric element comprising a thermoelectric semiconductor; an electrode connecting the first and second thermoelectric elements; and at least a first and a second joining layer, the first joining layer positioned between the first thermoelectric element and the electrode, and the second joining layer positioned between the second thermoelectric element and the electrode; and at least a first and a second barrier layer including an alloy including Cu, Mo and Ti, the first barrier layer positioned between the first thermoelectric element and the first joining layer, and the second barrier layer positioned between the second thermoelectric element and the second joining layer.

Abstract: The present disclosure discloses a thermoelectric module to which a bonding technique for stably driving the thermoelectric module at high temperatures is applied and a method of manufacturing the thermoelectric module. The thermoelectric module according to the present disclosure includes thermoelectric elements including a thermoelectric semiconductor, an electrode which includes a metal material and is connected between the thermoelectric elements, and a bonding layer which is interposed between the thermoelectric element and the electrode to bond the thermoelectric element with the electrode and includes a metal compound including metals of two or more classes as a sintered body of a paste including metal powders of two or more classes.

Abstract: A thermoelectric module and a thermoelectric generator, the thermoelectric module includes a first substrate provided with a first electrode, a second substrate provided with a second electrode and disposed opposite to the first substrate, and a plurality of thermoelectric elements disposed between the first substrate and the second substrate and electrically connected to the first electrode and the second electrode. The thermoelectric elements may be sintered and bonded to each other with bonding layers containing silver (Ag) to be electrically connected between the first substrate and the second substrate, and may include Skutterudite-based thermoelectric elements electrically connected to the first electrode and BiTe-based thermoelectric elements connected to the Skutterudite-based thermoelectric elements with the bonding layers and electrically connected to the second electrode.

Abstract: A thermoelectric module that has excellent thermal, electric properties, can realize high joining force between thermoelectric elements and an electrode, and can maintain stable joining even at a high temperature.

Abstract: A method for preparing a metal powder includes preparing a mixture by mixing a fluoride of a group 1 element, a fluoride of a group 2 element or a transition metal fluoride, with neodymium oxide, boron, iron, and a reducing agent; and heating the mixture at a temperature of 800° C. to 1100° C.

Abstract: Provided are a silicon oxide-carbon composite and a method of manufacturing the same. More particularly, the present invention provides a method of manufacturing a silicon oxide-carbon composite including mixing silicon and silicon dioxide to be included in a reaction chamber, depressurizing a pressure of the reaction chamber to obtain a high degree of vacuum while increasing a temperature in the reaction chamber to a reaction temperature, reacting the mixture of silicon and silicon dioxide in a reducing atmosphere, and coating a surface of silicon oxide manufactured by the reaction with carbon, and a silicon oxide-carbon composite manufactured thereby.

Abstract: The present disclosure discloses a thermoelectric module to which a bonding technique for stably driving the thermoelectric module at high temperatures is applied and a method of manufacturing the thermoelectric module. The thermoelectric module according to the present disclosure includes thermoelectric elements including a thermoelectric semiconductor, an electrode which includes a metal material and is connected between the thermoelectric elements, and a bonding layer which is interposed between the thermoelectric element and the electrode to bond the thermoelectric element with the electrode and includes a metal compound including metals of two or more classes as a sintered body of a paste including metal powders of two or more classes.

Abstract: Provided are: a compound semiconductor thermoelectric material, having excellent thermoelectric conversion performance by having an excellent power factor and ZT value, and in particular, having excellent thermoelectric conversion performance at a low temperature; a method for manufacturing the same; and a thermoelectric module, a thermoelectric generator, or a thermoelectric cooling device, etc. using the same. The compound semiconductor thermoelectric material according to the present invention comprises: an n-type compound semiconductor matrix; and n-type particles which are dispersed in the matrix, are compound semiconductors which are different from the matrix, and have an average particle size of 1 ?m to 100 ?m.

Abstract: Provided is a method of manufacturing silicon oxide by which an amount of oxygen of the silicon oxide may be controlled. The method of manufacturing silicon oxide may include mixing silicon and silicon dioxide to be included in a reaction chamber, depressurizing a pressure of the reaction chamber to obtain a high degree of vacuum while increasing a temperature in the reaction chamber to a reaction temperature, and reacting the mixture of silicon and silicon dioxide in a reducing atmosphere.

Abstract: The present invention relates to a method of preparing silicon oxide, in which the amounts of silicon and oxygen are appropriately controlled by decreasing the amount of the oxygen from silicon oxide containing a relatively large amount of oxygen, silicon oxide prepared by the method, and a secondary battery including the same. According to the method of preparing silicon oxide, silicon oxide (first silicon oxide) including a relatively large amount of oxygen is heat treated in a reducing atmosphere to decrease the amount of the oxygen in the silicon oxide (first silicon oxide) and to prepare silicon oxide (second silicon oxide) including silicon and oxygen in an appropriate amount (Si:SiO2=1:0.7-0.98), thereby improving capacity and initial efficiency and securing stability and cycle properties (lifetime characteristics) of the secondary battery.

Abstract: Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1 <Chemical Formula 1> Bi2TexSea-xInyMz where, in Chemical Formula 1, M is at least one selected from the group consisting of Cu, Fe, Co, Ag and Ni, 2.5<x<3.0, 3.0?a<3.5, 0<y and 0?z.

Abstract: Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1 <Chemical Formula 1> Bi2TexSen?xInyMz where in Chemical Formula 1, M is at least one selected from the group consisting of Cu, Fe, Co, Ag and Ni, 2.5<x<3.0, 3.0?a<3.5, 0<y and 0?z.

Abstract: The present invention relates to a method of preparing silicon oxide, in which the amounts of silicon and oxygen are appropriately controlled by decreasing the amount of the oxygen from silicon oxide containing a relatively large amount of oxygen, silicon oxide prepared by the method, and a secondary battery including the same. According to the method of preparing silicon oxide, silicon oxide (first silicon oxide) including a relatively large amount of oxygen is heat treated in a reducing atmosphere to decrease the amount of the oxygen in the silicon oxide (first silicon oxide) and to prepare silicon oxide (second silicon oxide) including silicon and oxygen in an appropriate amount (Si:SiO2=1:0.7-0.98), thereby improving capacity and initial efficiency and securing stability and cycle properties (lifetime characteristics) of the secondary battery.

Abstract: Provided is a method of manufacturing silicon oxide by which an amount of oxygen of the silicon oxide may be controlled. The method of manufacturing silicon oxide may include mixing silicon and silicon dioxide to be included in a reaction chamber, depressurizing a pressure of the reaction chamber to obtain a high degree of vacuum while increasing a temperature in the reaction chamber to a reaction temperature, and reacting the mixture of silicon and silicon dioxide in a reducing atmosphere.

Abstract: Provided are a silicon oxide-carbon composite and a method of manufacturing the same. More particularly, the present invention provides a method of manufacturing a silicon oxide-carbon composite including mixing silicon and silicon dioxide to be included in a reaction chamber, depressurizing a pressure of the reaction chamber to obtain a high degree of vacuum while increasing a temperature in the reaction chamber to a reaction temperature, reacting the mixture of silicon and silicon dioxide in a reducing atmosphere, and coating a surface of silicon oxide manufactured by the reaction with carbon, and a silicon oxide-carbon composite manufactured thereby.

Abstract: Provided is silicon oxide for an anode active material of a secondary battery. More particularly, the present invention provides silicon oxide included in an anode active material of a secondary battery, wherein a ratio of a maximum height (h2) of a peak in a 2 theta range of 40° to 60° to a maximum height (h1) of a peak in a 2 theta range of 15° to 40° in a X-ray diffraction (XRD) pattern of the silicon oxide satisfies 0.40?h2/h1?1.5.