Abstract: Aspects of the present disclosure eliminating the need for a memory device to have both a shifter that shifts input pin values from an input domain into a parity domain and another shifter that shifts a decoded command from the input domain into the parity domain. A memory device can achieve this by, when parity is being performed, shifting the input from the input pins into the parity domain prior to decoding the command. Using a multiplexer, the decoder can receive the command pin portion of the shifted input when parity checking is being performed and can receive the un-shifted command pin input when parity checking is not being performed. The decoder can use the command pin portion of the shifted input to generate shifted and decoded commands or can use the un-shifted command pin input to generate decoded commands.

Abstract: A memory device may include a memory array that includes multiple memory cells. The memory device may also include multiple sense amplifiers that, in operation, may each be connected to one or more memory cells. The sense amplifiers may be designed to assist in writing logical zeros to the multiple memory cells.

Abstract: A memory device may include a memory array, which may also include, multiple memory cells. The memory device may also include one or more counters designed to generate internal memory addresses to sequentially access the memory cells and facilitate writing logical zeros to all of the memory cells.

Abstract: A memory device may include a memory array comprising at least two sections. Each of the sections may further include multiple memory cells. The memory device may also include one or more controllers designed to receive one or more commands to initiate writing logical data to the multiple memory cells of a first section and a second section. Additionally, the writing may alternate between the first section and the second section until the first section and second section have been entirely written with the logical data.