Abstract: Provided are a semiconductor package, a method of forming the semiconductor package, and a printed circuit board (PCB). The semiconductor package includes: a PCB including at least two parts divided by an isolation region; a semiconductor chip mounted on the PCB; and a molding layer disposed in the isolation region. The method includes: preparing a PCB, the PCB including a plurality of chip regions and a scribe region; forming isolation regions dividing each of the chip regions into two parts, the isolation regions including inner isolation regions and outer isolation regions, the inner isolation regions being provided in the chip regions, the outer isolation regions being provided at both ends of the inner isolation regions so as to extend toward the scribe region; mounting semiconductor chips on the chip regions; and cutting the PCB along the scribe region to divide the chip regions into at least two parts.

Abstract: A method of fabricating a phase change memory includes forming a lower electrode on a semiconductor substrate, forming a phase change pattern, an upper electrode, and a hard mask pattern sequentially on the lower electrode, a width of a bottom surface of the hard mask pattern being greater than a width of a top surface of the hard mask pattern, the bottom surface of the hard mask pattern facing the upper electrode and being opposite the top surface of the hard mask pattern, and forming a capping layer to cover the top surface of the hard mask pattern and sidewalls of the hard mask pattern, phase change pattern, and upper electrode.

Abstract: In one aspect, a method of fabricating a semiconductor device is provided. The method includes forming at least one capping layer over epitaxial source/drain regions of a PMOS device, forming a stress memorization (SM) layer over the PMOS device including the at least one capping layer and over an adjacent NMOS device, and treating the SM layer formed over the NMOS and PMOS devices to induce tensile stress in a channel region of the NMOS device.

Abstract: Disclosed is a chip-on-film (COF) type semiconductor package and a device using the same. The COF type semiconductor package may include an insulation substrate including a top surface and bottom surface, a semiconductor device on the top surface of the insulation substrate, a heat dissipating component on the bottom surface of the insulation substrate, and at least one space between the bottom surface of the insulation substrate and a top surface of the heat dissipating component.

Abstract: A method of fabricating a phase change memory includes forming a lower electrode on a semiconductor substrate, forming a phase change pattern, an upper electrode, and a hard mask pattern sequentially on the lower electrode, a width of a bottom surface of the hard mask pattern being greater than a width of a top surface of the hard mask pattern, the bottom surface of the hard mask pattern facing the upper electrode and being opposite the top surface of the hard mask pattern, and forming a capping layer to cover the top surface of the hard mask pattern and sidewalls of the hard mask pattern, phase change pattern, and upper electrode.

Abstract: Disclosed is a chip-on-film (COF) type semiconductor package and a device using the same. The COF type semiconductor package may include an insulation substrate including a top surface and bottom surface, a semiconductor device on the top surface of the insulation substrate, a heat dissipating component on the bottom surface of the insulation substrate, and at least one space between the bottom surface of the insulation substrate and a top surface of the heat dissipating component.

Abstract: A communication node detects a communication fault thereof, and when a communication fault is detected, the communication node determines whether the communication node is included in a transmission path of a data packet with reference to a routing table and transmits the stored communication fault notification message to peripheral communication nodes.

Abstract: Provided are semiconductor packages and electronic systems including the same. A substrate is provided. A plurality of semiconductor chips may be stacked the substrate, and each of them may include at least one electrode pad. At least one of the plurality of semiconductor chips may include at least one redistribution pad configured to electrically connect with the at least one electrode pad.

Abstract: Provided are a semiconductor package and a method for forming the same, and a PCB (printed circuit board). The semiconductor package comprises: a PCB including a slit at a substantially central portion thereof, the PCB including an upper surface and a lower surface; a semiconductor chip mounted on the upper surface of the PCB; an upper molding layer disposed on the upper surface and covering the semiconductor chip; and a lower molding layer filling the slit and covering a portion of the lower surface of the PCB, wherein the PCB comprises a connecting recess at a side surface thereof, and the upper molding layer and the lower molding layer are in contact with each other at the connecting recess.

Abstract: A NAND based non-volatile memory device can include a plurality of memory cells vertically arranged as a NAND string and a plurality of word line plates each electrically connected to a respective gate of the memory cells in the NAND string. A plurality of word line contacts can each be electrically connected to a respective word line plate, where the plurality of word line contacts are aligned to a bit line direction in the device.

Abstract: A method for managing scanning of a plurality of channels in a wireless network is disclosed. The method comprises detecting by a station that a first channel in a plurality of channels is being used for a communication by another station, determining a duration of the communication based upon the communication information, setting a Network Allocation Vector for the station based on the determined duration, scanning a number of channels during the determined duration, and returning to the first channel upon at least one of a) completion of the step of scanning and b) an end of the determined duration.

Abstract: Disclosed is a chip-on-film (COF) type semiconductor package and a device using the same. The COF type semiconductor package may include an insulation substrate including a top surface and bottom surface, a semiconductor device on the top surface of the insulation substrate, a heat dissipating component on the bottom surface of the insulation substrate, and at least one space between the bottom surface of the insulation substrate and a top surface of the heat dissipating component.

Abstract: In a semiconductor memory device and method, resistive-change memory cells are provided, each including a plurality of control transistors formed on different layers and variable resistance devices comprising a resistive-change memory. Each resistive-change memory cell includes a plurality of control transistors formed on different layers, and a variable resistance device formed of a resistive-change memory. In one example, the number of the control transistors is two. The semiconductor memory device includes a global bit line; a plurality of local bit lines connected to or disconnected from the global bit line via local bit line selection circuits which correspond to the local bit lines, respectively; and a plurality of resistive-change memory cell groups storing data while being connected to the local bit lines, respectively.

Abstract: A method of fabricating a phase change memory includes forming a lower electrode on a semiconductor substrate, forming a phase change pattern, an upper electrode, and a hard mask pattern sequentially on the lower electrode, a width of a bottom surface of the hard mask pattern being greater than a width of a top surface of the hard mask pattern, the bottom surface of the hard mask pattern facing the upper electrode and being opposite the top surface of the hard mask pattern, and forming a capping layer to cover the top surface of the hard mask pattern and sidewalls of the hard mask pattern, phase change pattern, and upper electrode.

Abstract: In one aspect, a method of fabricating a semiconductor device is provided. The method includes forming at least one capping layer over epitaxial source/drain regions of a PMOS device, forming a stress memorization (SM) layer over the PMOS device including the at least one capping layer and over an adjacent NMOS device, and treating the SM layer formed over the NMOS and PMOS devices to induce tensile stress in a channel region of the NMOS device.

Abstract: Provided are a semiconductor package and a method for forming the same, and a PCB (printed circuit board). The semiconductor package comprises: a PCB including a slit at a substantially central portion thereof, the PCB including an upper surface and a lower surface; a semiconductor chip mounted on the upper surface of the PCB; an upper molding layer disposed on the upper surface and covering the semiconductor chip; and a lower molding layer filling the slit and covering a portion of the lower surface of the PCB, wherein the PCB comprises a connecting recess at a side surface thereof, and the upper molding layer and the lower molding layer are in contact with each other at the connecting recess.

Abstract: In a semiconductor memory device and method, phase-change memory cells are provided, each including a plurality of control transistors formed on different layers and variable resistance devices formed of a phase-change material. Each phase-change memory cell includes a plurality of control transistors formed on different layers, and a variable resistance device formed of a phase-change material. In one example, the number of the control transistors is two. The semiconductor memory device includes a global bit line; a plurality of local bit lines connected to or disconnected from the global bit line via local bit line selection circuits which correspond to the local bit lines, respectively; and a plurality of phase-change memory cell groups storing data while being connected to the local bit lines, respectively.

Abstract: A preamble for an OFDM signal synchronizes (104) and estimates (106) the sub-channels with only one code. One polyphase code sequence is used repeatedly for the preamble. The preamble is spread out over the bandwidth, which is the same as an OFDM symbol in the frequency domain and has good autocorrelation characteristics in the time domain. All OFDM signals are added with this preamble at the beginning of the OFDM signal and transmitted on the channel at a transmitter (50). At the receiving end, the receiver (100) first does the autocorrelation process to find out a peak value for synchronization in the time domain. Then, since the polyphase code is known at the receiver, the signal to noise ratio for each sub-carrier is calculated in the frequency domain and smoothed using the normal (Gaussian) distribution to provide the channel estimation. Since the synchronization and channel estimation are processed with a single preamble, the overhead for these two functions is significantly reduced.

Abstract: Provided are a semiconductor package, a method of forming the semiconductor package, and a printed circuit board (PCB). The semiconductor package includes: a PCB including at least two parts divided by an isolation region; a semiconductor chip mounted on the PCB; and a molding layer disposed in the isolation region. The method includes: preparing a PCB, the PCB including a plurality of chip regions and a scribe region; forming isolation regions dividing each of the chip regions into two parts, the isolation regions including inner isolation regions and outer isolation regions, the inner isolation regions being provided in the chip regions, the outer isolation regions being provided at both ends of the inner isolation regions so as to extend toward the scribe region; mounting semiconductor chips on the chip regions; and cutting the PCB along the scribe region to divide the chip regions into at least two parts.

Abstract: A method and system for allocating channels in a wireless network is provided. The wireless network includes a plurality of electronic devices organized into clusters. The plurality of electronic devices communicates with each other through a plurality of channels. The method performed by an electronic device includes scanning the plurality of channels for a frame generated in a first cluster and determining that the frame is a beacon frame transmitted by a first cluster header in the first cluster. Further, the method includes sending a channel request to the first cluster header and receiving a channel request response from the first cluster header. Moreover, the method includes designating the electronic device as a second cluster header for a second cluster.