Abstract: An aerosol generating device includes: a liquid storage configured to store an aerosol generating material; a first residual amount detection sensor and a second residual amount detection sensor respectively arranged on a first inner surface and a second inner surface that face each other among inner surfaces of the liquid storage; a third residual amount detection sensor and a fourth residual amount detection sensor respectively arranged on a third inner surface and a fourth inner surface of the liquid storage that face each other and are different from the first inner surface and the second inner surface of the liquid storage; and a controller configured to measure a remaining amount of the aerosol generating material based on a first detected value output by the first residual amount detection sensor and a second detected value output by the second residual amount detection sensor.

Abstract: An aerosol generating device includes a first cartridge including a first material and a delivery hole, a second cartridge including chambers for accommodating a second material through which an aerosol passes, a position of the second cartridge with respect to the first cartridge being changeable, a remaining amount sensor configured to detect a remaining amount of the first material, and a controller configured to determine a consumption amount at which the first material is consumed with respect to a usage chamber that currently passes the aerosol based on the detected remaining amount of the first material and to compare the consumption amount of the first material with a pre-set reference consumption amount of the first material with respect to the usage chamber, thereby determining a position changing time at which changing of a position of the second cartridge is required.

Abstract: A seatback-folding device for emergency escape for vehicles is equipped with a simply structured mechanism for emergency escape. A locking operation at the time of unfolding of a seatback of a second-row seat and an unlocking operation at the time of folding of the seatback of the second-row seat are performed by ascending/descending of a shaft caused by operation of a lever, thereby not only enabling an occupant sitting on a third-row seat to quickly fold the seatback of the second-row seat and thus to easily secure an emergency escape route, but also reducing the number of components, weight, the number of assembly processes, and manufacturing cost compared to a related art.

Abstract: A vehicle battery control apparatus which includes a memory and a controller. For example, the vehicle battery control apparatus obtains at least one of driving durability data according to a driving state of a host vehicle or calendar aging data according to a parking state of the host vehicle, or any combination thereof, obtains degradation data of a battery of the host vehicle using at least some of the driving durability data or the calendar aging data, or the any combination thereof, and compares reference data identified based on a predetermined reference model with the degradation data to determine a degradation state of the battery.

Abstract: An aerosol generating device includes: a cartridge including a liquid storage and an atomizer; and a main body including a battery, a puff sensor, and a controller configured to perform pulse width modulation (PWM) control for supplying power from the battery to the atomizer, wherein the controller performs the PWM control at a first duty ratio during a puff period and performs the PWM control at a second duty ratio lower than the first duty ratio during a non-puff period between puff periods.

Abstract: An aerosol generating device and a controlling method thereof are provided. An aerosol generating device includes: a battery configured to supply power for generating an aerosol from an aerosol generating material; a converter configured to convert a supply voltage from the battery into a constant voltage of a predetermined level; a heater configured to heat the aerosol generating material using the supply voltage; a detection circuit configured to detect a change in resistance of the heater by applying the constant voltage output from the converter and performing a current sensing on the heater with a resistance value; and a controller configured to control the heater for generating the aerosol by switching between a monitoring mode for performing the detection of the change in the resistance of the heater using the constant voltage and a heating mode for heating the heater using the supply voltage.

Abstract: A non-contact interface device for a vehicle and a method for controlling the same, may display an operation system menu for a driver and passengers to operate various kinds of devices of the vehicle as a hologram, enable a user to operate the displayed operation system menu in a non-contact manner by use of the user's finger or the like, and provide the user with a tactile feedback for a non-contact operation, so that the user can recognize whether to have operated the menu.

Abstract: A display device comprises a first substrate including a first contact hole, a first barrier insulating layer disposed on the first substrate and including a second contact hole, a fan-out line disposed in a first metal layer on the first barrier insulating layer, the fan-out line including a protruding part inserted in the second contact hole to protrude from below the first barrier insulating layer, and a recessed part formed by the second contact hole, an etching electrode disposed in the recessed part of the fan-out line, a second substrate disposed on the fan-out line and the etching electrode and including a third contact hole, a display layer disposed on the second substrate, and a flexible film disposed below the first substrate and inserted in the first contact hole to be electrically connected to the protruding part of the fan-out line.

Abstract: The present disclosure relates to an apparatus and method for processing interference signal of an automotive radar, and more particularly, to an apparatus and method for processing interference signal of an automotive radar to detect and cancel interference signal of the automotive radar.

Abstract: Disclosed is a fan-out buffer which includes a first channel that includes a first delay circuit adjusting a first delay time of a calibration test signal depending on a first delay control signal, a second channel that includes a second delay circuit adjusting a second delay time of the calibration test signal depending on a second delay control signal, a first edge-to-pulse converter that detects a first edge included in a first time domain reflectometry (TDR) waveform of an output terminal of the first channel and generates a first start pulse signal including a first pulse, a second edge-to-pulse converter that generates a second start pulse signal including a second pulse, a stop pulse signal generator that generates a stop pulse signal including a first stop pulse, and a first delay control signal generator that calculates a phase difference generates the first delay control signal.

Abstract: Disclosed is a fan-out buffer which includes a first channel that includes a first delay circuit adjusting a first delay time of a calibration test signal depending on a first delay control signal, a second channel that includes a second delay circuit adjusting a second delay time of the calibration test signal depending on a second delay control signal, a first edge-to-pulse converter that detects a first edge included in a first time domain reflectometry (TDR) waveform of an output terminal of the first channel and generates a first start pulse signal including a first pulse, a second edge-to-pulse converter that generates a second start pulse signal including a second pulse, a stop pulse signal generator that generates a stop pulse signal including a first stop pulse, and a first delay control signal generator that calculates a phase difference generates the first delay control signal.

Abstract: Disclosed is a semiconductor device including: a substrate including a first active pattern separated into a pair of first active patterns by a trench; a device isolation layer filling the trench; first source/drain patterns on the first active pattern; a first channel pattern connected to the first source/drain patterns and including semiconductor patterns; a first dummy gate electrode that extends while being adjacent to a first sidewall of the trench; a gate electrode that is spaced apart in the first direction from the first dummy gate electrode and extends while running across the first channel pattern, a gate capping pattern on the gate electrode; a gate contact coupled to the gate electrode; and a separation pattern extending between the gate electrode and the first dummy gate electrode. A top surface of the separation pattern is at a same level as that of the gate capping pattern.

Abstract: A semiconductor device may include active fins each of which extends in a first direction on a substrate, the active fins being spaced apart from each other in a second direction different from the first direction, a conductive structure extending in the second direction on the substrate, the conductive structure contacting the active fins, a first diffusion break pattern between the substrate and the conductive structure, the first diffusion break pattern dividing a first active fin of the active fins into a plurality of pieces aligned in the first direction, and a second diffusion break pattern adjacent to the conductive structure on the substrate, the second diffusion break pattern having an upper surface higher than a lower surface of the conductive structure, and dividing a second active fin of the active fins into a plurality of pieces aligned in the first direction.

Abstract: A semiconductor device includes a substrate; a plurality of conductive areas formed on the substrate at a first vertical level; a first wiring layer formed on the substrate at a second vertical level which is higher than the first vertical level, the first wiring layer including first lines that extend in a first direction, one first line of the first lines connected to a first conductive area selected from the plurality of conductive areas through a via contact; a second wiring layer formed on the substrate at a third vertical level which is higher than the second vertical level, the second wiring layer including second lines that extend in a second direction that crosses the first direction, one second line of the second lines connected to a second conductive area selected from the plurality of conductive areas; and a deep via contact spaced apart from lines of the first wiring layer in a horizontal direction and extending from the second conductive area to the one second line.

Abstract: A method of generating a layout and manufacturing a semiconductor device, including receiving a design layout of a semiconductor device including active fins; extracting a design rule of the active fins from the design layout; forming fin lines overlapping the active fins such that the fin lines have a length that is greater than a length of the active fins, wherein the fin lines continuously extend from a position adjacent to one edge of a layout region of the semiconductor device toward another edge, and are formed in an entirety of the layout region of the semiconductor device; forming a mandrel pattern layout in an entirety of the layout region of the semiconductor device, using the fin lines; and forming a cut pattern layout in the entirety of the layout region of the semiconductor device, using the active fins.

Abstract: A semiconductor device may include active fins each of which extends in a first direction on a substrate, the active fins being spaced apart from each other in a second direction different from the first direction, a conductive structure extending in the second direction on the substrate, the conductive structure contacting the active fins, a first diffusion break pattern between the substrate and the conductive structure, the first diffusion break pattern dividing a first active fin of the active fins into a plurality of pieces aligned in the first direction, and a second diffusion break pattern adjacent to the conductive structure on the substrate, the second diffusion break pattern having an upper surface higher than a lower surface of the conductive structure, and dividing a second active fin of the active fins into a plurality of pieces aligned in the first direction.

Abstract: A semiconductor device includes a first conductive element, a first insulating layer and a second insulating layer sequentially disposed on the first conductive element, a conductive via passing through the first insulating layer and the second insulating layer. The conductive via is connected to the first conductive element. The semiconductor device includes a via extension portion disposed in the second insulating layer that extends along an upper surface of the first insulating layer from one side surface of the conductive via, and a second conductive element disposed on the second insulating layer that is connected to the via extension portion.

Abstract: A design method of a semiconductor integrated circuit layout and a method of fabricating a semiconductor device, the design method including selecting a first cell layout including at least one first gate pattern; selecting a second cell layout including at least one second gate pattern, the at least one second gate pattern having a gate length that is different from a gate length of the at least one first gate pattern; producing a pattern layout from the first and second cell layouts; and producing a mask layout selectively overlapping the first cell layout on the pattern layout.

Abstract: Disclosed are a semiconductor device and a method of manufacturing the same. The semiconductor device includes first and second logic cells adjacent to each other in a first direction on a substrate, a gate electrode extending in the first direction in each of the first and second logic cells, a power line extending in a second direction at a boundary between the first and second logic cells, and a connection structure electrically connecting the power line to an active pattern of the first logic cell and to an active pattern of the second logic cell. The connection structure lies below the power line and extends from the first logic cell to the second logic cell. A top surface of the connection structure is at a higher level than that of a top surface of the gate electrode.

Abstract: A semiconductor device includes a first conductive element, a first insulating layer and a second insulating layer sequentially disposed on the first conductive element, a conductive via passing through the first insulating layer and the second insulating layer. The conductive via is connected to the first conductive element. The semiconductor device includes a via extension portion disposed in the second insulating layer that extends along an upper surface of the first insulating layer from one side surface of the conductive via, and a second conductive element disposed on the second insulating layer that is connected to the via extension portion.