Patents by Inventor Byung-yoo Hong

Byung-yoo Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Device having inductors and capacitors
    Patent number: 7939909
    Abstract: An LC device having a substrate, a support layer having upper and lower sides formed on the substrate, inductors formed on either the upper or lower side of the support layer, and capacitors formed in the opposite side of the support layer. The support layer may be formed of a low-k dielectric material, and a connection portion may be provided to connect the inductors and capacitors in the support layer. The inductors and capacitors are disposed in a stacked structure on the upper and lower sides of the low-k dielectric support layer on the substrate, so that space efficiency may be maximized on the substrate. The low-k dielectric support layer provides support between the inductors and capacitors so that substrate loss is minimized and a Q factor of the inductors is enhanced.
    Type: Grant
    Filed: January 22, 2007
    Date of Patent: May 10, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Moon-chul Lee, In-sang Song, Young-tack Hong, Sung-hye Jeong, Jeong-yoo Hong, Byung-yoo Hong
  • Device having inductors and capacitors
    Publication number: 20070115702
    Abstract: An LC device having a substrate, a support layer having upper and lower sides formed on the substrate, inductors formed on either the upper or lower side of the support layer, and capacitors formed in the opposite side of the support layer. The support layer may be formed of a low-k dielectric material, and a connection portion may be provided to connect the inductors and capacitors in the support layer. The inductors and capacitors are disposed in a stacked structure on the upper and lower sides of the low-k dielectric support layer on the substrate, so that space efficiency may be maximized on the substrate. The low-k dielectric support layer provides support between the inductors and capacitors so that substrate loss is minimized and a Q factor of the inductors is enhanced.
    Type: Application
    Filed: January 22, 2007
    Publication date: May 24, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Moon-chul Lee, In-sang Song, Young-tack Hong, Sung-hye Jeong, Jeong-yoo Hong, Byung-yoo Hong