Patents by Inventor Byungchul Brandon Jang

Byungchul Brandon Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10788849
    Abstract: An integrated circuit (IC) comprises an output and a voltage regulator. The voltage regulator comprises an amplifier having a first input coupled to a reference voltage source and a second input coupled to the output, a first resistor coupled to the output and coupled to a ground terminal, a metal oxide semiconductor field effect transistor (MOSFET) having a gate coupled to an output of the amplifier and a drain coupled to the output, and a second resistor coupled to a source of the MOSFET and coupled to the ground terminal.
    Type: Grant
    Filed: May 21, 2019
    Date of Patent: September 29, 2020
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Nghia Trong Tang, Byungchul Brandon Jang, Timothy Bryan Merkin
  • Publication number: 20200081468
    Abstract: An integrated circuit (IC) comprises an output and a voltage regulator. The voltage regulator comprises an amplifier having a first input coupled to a reference voltage source and a second input coupled to the output, a first resistor coupled to the output and coupled to a ground terminal, a metal oxide semiconductor field effect transistor (MOSFET) having a gate coupled to an output of the amplifier and a drain coupled to the output, and a second resistor coupled to a source of the MOSFET and coupled to the ground terminal.
    Type: Application
    Filed: May 21, 2019
    Publication date: March 12, 2020
    Inventors: Nghia Trong Tang, Byungchul Brandon Jang, Timothy Bryan Merkin
  • Patent number: 10338621
    Abstract: An integrated circuit (IC) comprises an output and a voltage regulator. The voltage regulator comprises an amplifier having a first input coupled to a reference voltage source and a second input coupled to the output, a first resistor coupled to the output and coupled to a ground terminal, a metal oxide semiconductor field effect transistor (MOSFET) having a gate coupled to an output of the amplifier and a drain coupled to the output, and a second resistor coupled to a source of the MOSFET and coupled to the ground terminal.
    Type: Grant
    Filed: September 11, 2018
    Date of Patent: July 2, 2019
    Assignee: Texas Instruments Incorporated
    Inventors: Nghia Trong Tang, Byungchul Brandon Jang, Timothy Bryan Merkin