Patents by Inventor BYUNGEUN YUN

BYUNGEUN YUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE
    Publication number: 20210384304
    Abstract: A semiconductor device includes: a substrate including a first region and a second region; a first gate stack on the first region of the substrate; a first source/drain contact at a first side of the first gate stack, wherein the first source/drain contact is connected to the substrate; a second gate stack on the second region of the substrate; and a second source/drain contact at a first side of the second gate stack, wherein the second source/drain contact is connected to the substrate, wherein a height of the second source/drain contact is greater than a height of the first source/drain contact, and wherein a width of the second source/drain contact is greater than a width of the first source/drain contact.
    Type: Application
    Filed: August 19, 2021
    Publication date: December 9, 2021
    Inventors: Byungeun Yun, Jun-Gu Kang, Dong-IL Park, Yongsang Jeong
  • Semiconductor device including contacts having different heights and different widths
    Patent number: 11114533
    Abstract: A semiconductor device includes: a substrate including a first region and a second region; a first gate stack on the first region of the substrate; a first source/drain contact at a first side of the first gate stack, wherein the first source/drain contact is connected to the substrate; a second gate stack on the second region of the substrate; and a second source/drain contact at a first side of the second gate stack, wherein the second source/drain contact is connected to the substrate, wherein a height of the second source/drain contact is greater than a height of the first source/drain contact, and wherein a width of the second source/drain contact is greater than a width of the first source/drain contact.
    Type: Grant
    Filed: October 24, 2019
    Date of Patent: September 7, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Byungeun Yun, Jun-Gu Kang, Dong-Il Park, Yongsang Jeong
  • SEMICONDUCTOR DEVICE
    Publication number: 20200303508
    Abstract: A semiconductor device includes: a substrate including a first region and a second region; a first gate stack on the first region of the substrate; a first source/drain contact at a first side of the first gate stack, wherein the first source/drain contact is connected to the substrate; a second gate stack on the second region of the substrate; and a second source/drain contact at a first side of the second gate stack, wherein the second source/drain contact is connected to the substrate, wherein a height of the second source/drain contact is greater than a height of the first source/drain contact, and wherein a width of the second source/drain contact is greater than a width of the first source/drain contact.
    Type: Application
    Filed: October 24, 2019
    Publication date: September 24, 2020
    Inventors: BYUNGEUN YUN, Jun-Gu Kang, Dong-IL Park, Yongsang Jeong