Patents by Inventor C. Boiziau

C. Boiziau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Films having in their thickness at least two superimposed zones, including an insulating zone and a conductive zone, and the production thereof by irradiating a polymer film by means of a beam of high energy ions
    Patent number: 5110683
    Abstract: The invention relates to the production of films having in their thickness at least two superimposed zones, including a semimetallic zone and an electrically insulating zone, by irradiating a polymer film by means of a high energy ion beam.It is possible by this process to produce semimetal (1)/insulant (2)/semimetal (3) structures by irradiating the polymer under vacuum by means of light ions or with a limited stopping power having an energy of at least 1 MeV/amu. It is also possible to obtain insulant (4)/semimetal (5)/insulant (6) structures by irradiating, in a confined atmosphere, the polymer by means of heavy ions or ions having a high energy loss with an energy of at least 1 MeV/amu.By irradiating only certain zones of the film, it is thus possible to form embedded or surface-positioned electrical connections.
    Type: Grant
    Filed: December 14, 1990
    Date of Patent: May 5, 1992
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Emmanuel Balanzat, C. Boiziau, Charles Darnez, Jean-Paul Duraud, Alain LeMoel
  • Films having in their thickness at least two superimposed zones, including an insulating zone and a conductive zone, and the production thereof by irradiating a polymer film by means of a beam of high energy ions
    Patent number: 4983460
    Abstract: The invention relates to the production of films having in their thickness at least two superimposed zones, including a semimetallic zone and an electrically insulating zone, by irradiating a polymer film by means of a high energy ion beam.It is possible by this process to produce semimetal (1)/insulant (2)/semimetal (3) structures by irradiating the polymer under vacuum by means of light ions or with a limited stopping power having an energy of at least 1 MeV/amu. It is also possible to obtain insulant (4)/semimetal (5)/insulant (6) structures by irradiating, in a confined atmosphere, the polymer by means of heavy ions or ions having a high energy loss with by energy of least 1 MeV/amu.By irradiating only certain zones of the film, it is thus possible to form embedded or surface-positioned electrical connections.
    Type: Grant
    Filed: June 2, 1988
    Date of Patent: January 8, 1991
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Emmanuel Balanzat, C. Boiziau, Charles Darnez, Jean-Paul Duraud, Alain Le Moel