Abstract: An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.

Abstract: A catalytic seeding control method is disclosed. A catalytic metal film is deposited on a substrate with a nonwettable inclined surface. The catalytic metal film is then melted to form metal droplets. The metal droplets roll along the nonwettable inclined surface and aggregate to form a singular catalytic seed on the bottom of the nonwettable inclined surface. Then, the location of the singular catalytic seed is precisely controlled. Also, the size of the catalytic seed is controlled by adjusting the size of the inclined surface and the thickness of the catalytic metal layer to grow a one-dimensional structure with specific localization and single well-aligned manipulated size. The structure is utilized for the integrated microelectronic device fabrication.