Abstract: A method of making a semiconductor structure includes forming a first contact pad over an interconnect structure. The method further includes forming a second contact pad over the interconnect structure, wherein the second contact pad is electrically separated from the first contact pad. The method further includes depositing a first buffer layer over the interconnect structure, wherein the first buffer layer partially covers the second contact pad, and an edge of the second contact pad extends beyond the first buffer layer.

Abstract: A semiconductor structure includes a first contact pad over an interconnect structure. The semiconductor structure further includes a second contact pad over the interconnect structure, wherein the second contact pad is electrically separated from the first contact pad. The semiconductor structure further includes a first buffer layer over the first contact pad, wherein the first buffer layer is partially over the second contact pad, and an edge of the second contact pad farthest from the first contact pad extends beyond the first buffer layer.

Abstract: A semiconductor structure includes a first contact pad over an interconnect structure. The semiconductor structure further includes a second contact pad over the interconnect structure, wherein the second contact pad is electrically separated from the first contact pad. The semiconductor structure further includes a first buffer layer over the first contact pad, wherein the first buffer layer is partially over the second contact pad, and an edge of the second contact pad farthest from the first contact pad extends beyond the first buffer layer.

Abstract: A method of designing a layout includes determining a first layout pattern, wherein the first layout pattern corresponds to a plurality of contact pads. The method further includes generating a second layout pattern. The method further includes checking whether an edge of the second layout pattern overlaps the first layout pattern. The method further includes adjusting the second layout pattern so that the edge of the second layout pattern overlaps the first layout pattern in response to a determination that the edge of the second layout pattern is separated from the first layout pattern.

Abstract: A method of designing a layout includes determining a first layout pattern, wherein the first layout pattern corresponds to a plurality of contact pads. The method further includes generating a second layout pattern. The method further includes checking whether an edge of the second layout pattern overlaps the first layout pattern. The method further includes adjusting the second layout pattern so that the edge of the second layout pattern overlaps the first layout pattern in response to a determination that the edge of the second layout pattern is separated from the first layout pattern.

Abstract: A semiconductor structure includes a first contact pad over a passivation layer, wherein the first contact pad is in a circuit region. The semiconductor structure further includes a plurality of second contact pads over the passivation layer, wherein each second contact pad of the plurality of second contact pads is in a non-circuit region. The semiconductor structure further includes a first buffer layer over the first contact pad and over a first second contact pad of the plurality of second contact pads. The semiconductor structure further includes a second buffer layer over the first buffer layer, the first contact pad, the first second contact pad and a portion of a second second contact pad of the plurality of second contact pads, wherein the second buffer layer exposes a portion of the second second contact pad of the plurality of second contact pads.

Abstract: A semiconductor structure includes a first contact pad over a passivation layer, wherein the first contact pad is in a circuit region. The semiconductor structure further includes a plurality of second contact pads over the passivation layer, wherein each second contact pad of the plurality of second contact pads is in a non-circuit region. The semiconductor structure further includes a first buffer layer over the first contact pad and over a first second contact pad of the plurality of second contact pads. The semiconductor structure further includes a second buffer layer over the first buffer layer, the first contact pad, the first second contact pad and a portion of a second second contact pad of the plurality of second contact pads, wherein the second buffer layer exposes a portion of the second second contact pad of the plurality of second contact pads.

Abstract: A method of fabricating a semiconductor device includes forming a first contact pad and a second contact pad over a first passivation layer, depositing a first buffer layer over the first contact pad and the second contact pad, and depositing a second buffer layer over the first buffer layer and the second contact pad. The first contact pad is in a circuit region and the second contact pad is in a non-circuit region. An edge of the second contact pad is exposed and a periphery of the first contact pad and an edge of the second contact pad are covered by the first buffer layer.

Abstract: A method of fabricating a semiconductor device includes forming a first contact pad and a second contact pad over a first passivation layer, depositing a first buffer layer over the first contact pad and the second contact pad, and depositing a second buffer layer over the first buffer layer and the second contact pad. The first contact pad is in a circuit region and the second contact pad is in a non-circuit region. An edge of the second contact pad is exposed and a periphery of the first contact pad and an edge of the second contact pad are covered by the first buffer layer.

Abstract: The present disclosure relates to a method of routing probe pads to micro-bumps of an interposer. An interposer is provided having target micro-bumps and probe pads. The probe pads are initially unassigned. Target micro-bump locations and probe pad locations are obtained. Possible route assignments from the probe pads to the target micro-bumps are obtained. Costs are developed for the possible route assignments at least partially according to the target micro-bump locations and the probe pad locations. Final assignments are selected from the possible assignments according to the costs.

Abstract: The present disclosure relates to a method of routing probe pads to micro-bumps of an interposer. An interposer is provided having target micro-bumps and probe pads. The probe pads are initially unassigned. Target micro-bump locations and probe pad locations are obtained. Possible route assignments from the probe pads to the target micro-bumps are obtained. Costs are developed for the possible route assignments at least partially according to the target micro-bump locations and the probe pad locations. Final assignments are selected from the possible assignments according to the costs.

Abstract: The present invention relates to compositions, methods and kits based on the ADAM-mediated cleavage of Her-2. The present invention also relates to treatments for cancer, and in particular, breast cancer, by modulating the ADAM-mediated cleavage of Her-2. Further, the invention relates to compositions, methods and kits based on the surprising synergistic effect between inhibition of Her-2 cleavage by an ADAM and certain cytostatic (e.g., Herceptin) and cytotoxic (e.g., Taxol) compounds in, among other things, inhibiting tumor cell proliferation and inducing cell death. Additionally, the invention relates to novel variants of ADAM15, designated ADAM15 variant 1 and ADAM15 variant 2, now identified and isolated.

Abstract: The present invention relates to compositions, methods and kits based on the ADAM-mediated cleavage of Her-2. The present invention also relates to treatments for cancer, and in particular, breast cancer, by modulating the ADAM-mediated cleavage of Her-2. Further, the invention relates to compositions, methods and kits based on the surprising synergistic effect between inhibition of Her-2 cleavage by an ADAM and certain cytostatic (e.g., Herceptin) and cytotoxic (e.g., Taxol) compounds in, among other things, inhibiting tumor cell proliferation and inducing cell death. Additionally, the invention relates to novel variants of ADAM15, designated ADAM15 variant 1 and ADAM15 variant 2, now identified and isolated.

Abstract: The present invention relates to compositions, methods and kits based on the ADAM-mediated cleavage of Her-2. The present invention also relates to treatments for cancer, and in particular, breast cancer, by modulating the ADAM-mediated cleavage of Her-2. Further, the invention relates to compositions, methods and kits based on the surprising synergistic effect between inhibition of Her-2 cleavage by an ADAM and certain cytostatic (e.g., Herceptin) and cytotoxic (e.g., Taxol) compounds in, among other things, inhibiting tumor cell proliferation and inducing cell death. Additionally, the invention relates to novel variants of ADAM15, designated ADAM15 variant 1 and ADAM15 variant 2, now identified and isolated.

Abstract: Application of an adhesion promoter to a cap layer and oxidation of the adhesion promoter prior to deposition of an organic interlevel dielectric thereon reduces via resistance problems during thermal cycles of semiconductor wafers embodying multiple levels of metal and organic interlevel dielectrics.

Abstract: Novel, highly conserved cell cycle regulatory genes (Emg1 and ENIP1) are described along with methods employing Emg1 and ENIP1 to detect compounds that are agonistic or antagonistic to cell cycle progression.

Abstract: The method of diverting a lava flow including the steps of positioning for illing a vessel, explosive under high temperature and pressure, at least partially filling the vessel with a nonflammable composition, stable at normal temperature and convertible to gas under high temperature allowing room within the vessel for expansion of the composition if frozen, tightly sealing the vessel to prevent loss of the composition, positioning in a volcanic region in the normal expected path of a lava flow in a specific area, which will cause the lava flow to be diverted from certain geographic locations upon explosion of the vessel, whereby when a lava flow occurs in the volcanic region and flows over the vessel, the vessel will heat up to temperatures in excess of 1000.degree. F.