Abstract: The invention relates to: a method of treating liquid waste (liquid agricultural or industrial effluents or aquatic sites) which is loaded or polluted with tributyl phosphate (TBP), modified bacterial strains which can be used in the aforementioned treatment method, a method for monitoring changes in TBP pollution, and the device which is used to perform said treatment method. According to the invention, the liquid waste-treatment or -purification method essentially comprises: steps (1) consisting in bringing said liquid waste into contact with at least one non-sulphur purple photosynthetic bacterial strain which is resistant to TBP and which is selected from the group containing Rhodopseudomonas palustris (Rp. palustris), Rhodospirillum rubrum (Rs. rubrum), Rhodobacter capsulatus (Rb. capsulatus) or Rhodobacter sphaeroides (Rb.

Abstract: An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch located below the weakened area. The positioning member maintains the position of the substrate on a moveable support. A cutting mechanism having at least one blade is provided for contacting the substrate and inducing a cleaving wave therein. The cutting mechanism is operatively associated with the positioning member so that the as at least one blade contacts the annular notch, the positioning member prevents movement of the substrate and the moveable support moves away from the substrate to allow the cleaving wave to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.

Abstract: The invention relates to: a method of treating liquid waste (liquid agricultural or industrial effluents or aquatic sites) which is loaded or polluted with tributyl phosphate (TBP), modified bacterial strains which can be used in the aforementioned treatment method, a method for monitoring changes in TBP pollution, and the device which is used to perform said treatment method. According to the invention, the liquid waste-treatment or -purification method essentially comprises: steps (1) consisting in bringing said liquid waste into contact with at least one non-sulphur purple photosynthetic bacterial strain which is resistant to TBP and which is selected from the group containing Rhodopseudomonas palustris (Rp. palustris), Rhodospirillum rubrum (Rs. rubrum), Rhodobacter capsulatus (Rb. capsulatus) or Rhodobacter sphaeroides (Rb.

Abstract: An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch located below the weakened area. The positioning member maintains the position of the substrate on a moveable support. A cutting mechanism having at least one blade is provided for contacting the substrate and inducing a cleaving wave therein. The cutting mechanism is operatively associated with the positioning member so that the as at least one blade contacts the annular notch, the positioning member prevents movement of the substrate and the moveable support moves away from the substrate to allow the cleaving wave to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.

Abstract: An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The cutting device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch that is located below the weakened area. The positioning member maintains a predetermined position of the substrate on a support. The device also includes cutting means having at least one blade for contacting the substrate and for inducing a cleaving wave into the substrate. The cutting means is operatively associated with the positioning member so that the at least one blade contacts the annular notch and the positioning member prevents movement of the substrate. The at least one blade induces a cleaving wave of sufficient intensity to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.

Abstract: The present invention relates to a method for manufacturing a heterogeneous material structure. The method includes forming a predetermined detachment area in a source substrate, and bonding the source substrate to a handle substrate to form a source-handle structure. The source-handle-structure is then annealed at a first energy level that is lower than the energy of a thermal detachment budget and stopping before detachment of the source substrate. Lastly, the source-handle-structure is annealed at a second energy level that is lower than the first energy level at least until the substrate detaches at the predetermined detachment area.

Abstract: The present invention relates to a method for manufacturing a heterogeneous material structure. The method includes forming a predetermined detachment area in a source substrate, and bonding the source substrate to a handle substrate to form a source-handle structure. The source-handle-structure is then annealed at a first energy level that is lower than the energy of a thermal detachment budget and stopping before detachment of the source substrate. Lastly, the source-handle-structure is annealed at a second energy level that is lower than the first energy level at least until the substrate detaches at the predetermined detachment area.

Abstract: An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The cutting device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch that is located below the weakened area. The positioning member maintains a predetermined position of the substrate on a support. The device also includes cutting means having at least one blade for contacting the substrate and for inducing a cleaving wave into the substrate. The cutting means is operatively associated with the positioning member so that the at least one blade contacts the annular notch and the positioning member prevents movement of the substrate. The at least one blade induces a cleaving wave of sufficient intensity to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.