Abstract: An electronic system includes an electronic device having a stack of layers, the stack including a first electrode, a subassembly with electrically controllable remanent states, a two-dimensional electron gas, a magnetic subassembly comprising at least one magnetic layer, and a second electrode having two first contacts and a second contact. The system also includes a writing device writing remanent states by applying an electric field between the two electrodes, and a Hall-effect reading device reading the remanent state by applying a current between the two first contacts and by measuring the voltage between the second contact and a reference potential.

Abstract: A cryogenic magnetic device includes a free layer having a free magnetisation and a magnetic anisotropy favouring the orientation of the free magnetisation according to a first orientation or a second orientation, the magnetic anisotropy being defined by an energy barrier separating the first orientation and the second orientation, the amplitude of the energy barrier being less than 6300 kB, the free layer having a Gilbert damping factor comprised between 0.02 and 0.4; a tunnel barrier extending in contact with the free layer; and a system configured to apply a voltage pulse through the tunnel barrier so as to reduce the amplitude of the energy barrier and switch the free magnetisation.