Abstract: An image sensor including a plurality of pixels formed in and on a semiconductor substrate, each pixel including: at least one first photosensitive region formed in the substrate; a second photosensitive region formed in the substrate in line with said at least one first photosensitive region; at least one charge collection area disposed on the side of the substrate opposite to said at least one first photosensitive area; at least one transfer region extending from said at least one first photosensitive area to said at least one charge collection area; and at least one vertical transfer gate laterally bordering said at least one transfer region.

Abstract: An image sensor including a plurality of avalanche photodiodes formed inside and on top of a semiconductor substrate of a first conductivity type having a front side and a back side, wherein: trenches vertically extend in the substrate from its front side to its back side, the trenches having, in top view, the shape of a continuous grid laterally delimiting a plurality of substrate islands, each island defining a pixel including a single individually-controllable avalanche photodiode, and including a doped area of collection of an avalanche signal of the pixel photodiode the lateral walls of the trenches are coated with a first semiconductor layer having a conductivity type opposite to that of the collection area, and a conductive region extends in the trenches, the conductive region being in contact with the surface of the first semiconductor layer opposite to the substrate.

Abstract: A method of forming an insulation structure inside and on top of a first semiconductor substrate, including the steps of: a) forming a trench vertically extending in the first substrate from a first surface of the first substrate; b) filling the trench, from the first surface of the first substrate, with a polysilicon region; c) thinning the first substrate on the side of a second surface of the first substrate, opposite to the first surface, to expose the polysilicon region at the bottom of the trench; d) removing the polysilicon region from the second surface of the first substrate; and e) filling the trench, from the second surface of the first substrate, with a metal.

Abstract: An image sensor including a plurality of avalanche photodiodes formed inside and on top of a semiconductor substrate of a first conductivity type having a front side and a back side, wherein: trenches vertically extend in the substrate from its front side to its back side, the trenches having, in top view, the shape of a continuous grid laterally delimiting a plurality of substrate islands, each island defining a pixel including a single individually-controllable avalanche photodiode, and including a doped area of collection of an avalanche signal of the pixel photodiode the lateral walls of the trenches are coated with a first semiconductor layer having a conductivity type opposite to that of the collection area, and a conductive region extends in the trenches, the conductive region being in contact with the surface of the first semiconductor layer opposite to the substrate.

Abstract: An image sensor including a plurality of avalanche photodiodes formed inside and on top of a semiconductor substrate of a first conductivity type having a front side and a back side, wherein: trenches vertically extend in the substrate from its front side to its back side, the trenches having, in top view, the shape of a continuous grid laterally delimiting a plurality of substrate islands, each island defining a pixel including a single individually-controllable avalanche photodiode, and including a doped area of collection of an avalanche signal of the pixel photodiode the lateral walls of the trenches are coated with a first semiconductor layer having a conductivity type opposite to that of the collection area, and a conductive region extends in the trenches, the conductive region being in contact with the surface of the first semiconductor layer opposite to the substrate.

Abstract: A pixelated filter wherein each pixel of the pixelated filter includes an interference filter including a stack of layers, and one or a plurality of waveguides each crossing all or part of the layers of said interference filter. In each pixel of the pixelated filter, the waveguide are configured to guide at least one optical mode and so that an evanescent portion of said at least one guided mode is filtered by the interference filter of the pixel.

Abstract: The invention provides an image sensor comprising a light receiving side (Fa) and, in a substrate (100), a photoelectric conversion region (PD) capable of converting light received from the light receiving side (Fa) into a charge, a storage region (SN) capable of storing a charge transferred from the photoelectric conversion region and an optical isolation element of the storage region. The optical isolation element (60) is buried in the substrate between the light receiving side and the storage region.

Abstract: A method of forming an insulation structure inside and on top of a first semiconductor substrate, including the steps of: a) forming a trench vertically extending in the first substrate from a first surface of the first substrate; b) filling the trench, from the first surface of the first substrate, with a polysilicon region; c) thinning the first substrate on the side of a second surface of the first substrate, opposite to the first surface, to expose the polysilicon region at the bottom of the trench; d) removing the polysilicon region from the second surface of the first substrate; and e) filling the trench, from the second surface of the first substrate, with a metal.

Abstract: An image sensor including a plurality of avalanche photodiodes formed inside and on top of a semiconductor substrate of a first conductivity type having a front side and a back side, wherein: trenches vertically extend in the substrate from its front side to its back side, the trenches having, in top view, the shape of a continuous grid laterally delimiting a plurality of substrate islands, each island defining a pixel including a single individually-controllable avalanche photodiode, and including a doped area of collection of an avalanche signal of the pixel photodiode the lateral walls of the trenches are coated with a first semiconductor layer having a conductivity type opposite to that of the collection area, and a conductive region extends in the trenches, the conductive region being in contact with the surface of the first semiconductor layer opposite to the substrate.

Abstract: A SPAD-type photodiode including, in an upper portion of a semiconductor substrate of a first conductivity type, an alternation of vertically stacked regions of the first conductivity type and regions of a second conductivity type, the regions of the first conductivity type being in contact with a same first semiconductor via of the first conductivity type and the regions of the second conductivity type being in contact with a same second semiconductor via of the second conductivity type.

Abstract: A thermoelectric module comprising a matrix comprising junctions having two N-type and P-type thermoelectric chips, said junctions being electrically connected to form an electric circuit. Flow of an electric current in the circuit heats one surface of the matrix by Peltier effect. Heating of one surface of the matrix makes an electric current flow by Seebeck effect. The module comprises a first group of junctions of two N-type and P-type thermoelectric chips exposed to a first operating temperature. A second group of junctions of two N-type and P-type thermoelectric chips is exposed to a second operating temperature. The second temperature is lower than the first temperature and the two groups of junctions are separated by a thermal insulator.