Patents by Inventor Cédric Giroud-Garampon
Cédric Giroud-Garampon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11901395Abstract: A method of forming an insulation structure inside and on top of a first semiconductor substrate, including the steps of: a) forming a trench vertically extending in the first substrate from a first surface of the first substrate; b) filling the trench, from the first surface of the first substrate, with a polysilicon region; c) thinning the first substrate on the side of a second surface of the first substrate, opposite to the first surface, to expose the polysilicon region at the bottom of the trench; d) removing the polysilicon region from the second surface of the first substrate; and e) filling the trench, from the second surface of the first substrate, with a metal.Type: GrantFiled: July 7, 2021Date of Patent: February 13, 2024Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Norbert Moussy, Cédric Giroud-Garampon
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Patent number: 11830891Abstract: An image sensor including a plurality of avalanche photodiodes formed inside and on top of a semiconductor substrate of a first conductivity type having a front side and a back side, wherein: trenches vertically extend in the substrate from its front side to its back side, the trenches having, in top view, the shape of a continuous grid laterally delimiting a plurality of substrate islands, each island defining a pixel including a single individually-controllable avalanche photodiode, and including a doped area of collection of an avalanche signal of the pixel photodiode the lateral walls of the trenches are coated with a first semiconductor layer having a conductivity type opposite to that of the collection area, and a conductive region extends in the trenches, the conductive region being in contact with the surface of the first semiconductor layer opposite to the substrate.Type: GrantFiled: October 21, 2020Date of Patent: November 28, 2023Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Norbert Moussy, Cédric Giroud-Garampon, Olivier Saxod
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Publication number: 20230343799Abstract: An image sensor including a plurality of avalanche photodiodes formed inside and on top of a semiconductor substrate of a first conductivity type having a front side and a back side, wherein: trenches vertically extend in the substrate from its front side to its back side, the trenches having, in top view, the shape of a continuous grid laterally delimiting a plurality of substrate islands, each island defining a pixel including a single individually-controllable avalanche photodiode, and including a doped area of collection of an avalanche signal of the pixel photodiode the lateral walls of the trenches are coated with a first semiconductor layer having a conductivity type opposite to that of the collection area, and a conductive region extends in the trenches, the conductive region being in contact with the surface of the first semiconductor layer opposite to the substrate.Type: ApplicationFiled: June 30, 2023Publication date: October 26, 2023Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Norbert Moussy, Cédric Giroud-Garampon, Olivier Saxod
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Publication number: 20230127057Abstract: A pixelated filter wherein each pixel of the pixelated filter includes an interference filter including a stack of layers, and one or a plurality of waveguides each crossing all or part of the layers of said interference filter. In each pixel of the pixelated filter, the waveguide are configured to guide at least one optical mode and so that an evanescent portion of said at least one guided mode is filtered by the interference filter of the pixel.Type: ApplicationFiled: October 25, 2022Publication date: April 27, 2023Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Sébastien Verdet, Cédric Giroud-Garampon
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Publication number: 20220165762Abstract: The invention provides an image sensor comprising a light receiving side (Fa) and, in a substrate (100), a photoelectric conversion region (PD) capable of converting light received from the light receiving side (Fa) into a charge, a storage region (SN) capable of storing a charge transferred from the photoelectric conversion region and an optical isolation element of the storage region. The optical isolation element (60) is buried in the substrate between the light receiving side and the storage region.Type: ApplicationFiled: November 12, 2021Publication date: May 26, 2022Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Quentin ABADIE, François AYEL, Cédric GIROUD-GARAMPON, Yvon CAZAUX
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Publication number: 20220013574Abstract: A method of forming an insulation structure inside and on top of a first semiconductor substrate, including the steps of: a) forming a trench vertically extending in the first substrate from a first surface of the first substrate; b) filling the trench, from the first surface of the first substrate, with a polysilicon region; c) thinning the first substrate on the side of a second surface of the first substrate, opposite to the first surface, to expose the polysilicon region at the bottom of the trench; d) removing the polysilicon region from the second surface of the first substrate; and e) filling the trench, from the second surface of the first substrate, with a metal.Type: ApplicationFiled: July 7, 2021Publication date: January 13, 2022Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Norbert Moussy, Cédric Giroud-Garampon
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Publication number: 20210159257Abstract: An image sensor including a plurality of avalanche photodiodes formed inside and on top of a semiconductor substrate of a first conductivity type having a front side and a back side, wherein: trenches vertically extend in the substrate from its front side to its back side, the trenches having, in top view, the shape of a continuous grid laterally delimiting a plurality of substrate islands, each island defining a pixel including a single individually-controllable avalanche photodiode, and including a doped area of collection of an avalanche signal of the pixel photodiode the lateral walls of the trenches are coated with a first semiconductor layer having a conductivity type opposite to that of the collection area, and a conductive region extends in the trenches, the conductive region being in contact with the surface of the first semiconductor layer opposite to the substrate.Type: ApplicationFiled: October 21, 2020Publication date: May 27, 2021Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Norbert Moussy, Cédric Giroud-Garampon, Olivier Saxod
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Publication number: 20200185560Abstract: A SPAD-type photodiode including, in an upper portion of a semiconductor substrate of a first conductivity type, an alternation of vertically stacked regions of the first conductivity type and regions of a second conductivity type, the regions of the first conductivity type being in contact with a same first semiconductor via of the first conductivity type and the regions of the second conductivity type being in contact with a same second semiconductor via of the second conductivity type.Type: ApplicationFiled: December 5, 2019Publication date: June 11, 2020Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Cédric Giroud-Garampon, Norbert Moussy, Olivier Saxod