Abstract: The invention relates to a method of forming a trapping structure of a useful substrate designed to trap charges and limit at least one of crosstalk, radio frequency losses, and distortions of a device that may be formed on or in the useful substrate. Formation of the trapping structure includes forming a first layer that includes amorphous silicon carbide and forming a second layer covering the first layer that comprises an insulating or semiconductor material in an amorphous state and having a crystallisation temperature lower than that of the amorphous silicon carbide.