Patents by Inventor C. J. Wang

C. J. Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming cylindrical DRAM capacitors
    Patent number: 6258662
    Abstract: The present invention discloses a method for forming a stacked capacitor DRAM cell by first forming polysilicon plugs in a thick oxide layer deposited on a pre-processed semiconductor wafer, a polysilicon layer, a dielectric layer and a polysilicon layer are then sequentially deposited on top of the polysilicon plugs for making electrical contact with the silicon substrate such that a crown-shaped stacked capacitor can be formed on top of a transistor of the DRAM cell and chip real estate can be saved.
    Type: Grant
    Filed: May 6, 1997
    Date of Patent: July 10, 2001
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: C. J. Wang, M. S. Liang, Y. C. Huang, T. L. Ying, H. C. Huang