Patents by Inventor Céline Bondoux

Céline Bondoux has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MgO-Based Coating for Electrically Insulating Semiconductive Substrates and Production Method Thereof
    Publication number: 20140332935
    Abstract: The present invention relates to a magnesium oxide-based (MgO) inorganic coating intended to electrically insulate semiconductive substrates such as silicon carbide (SiC), and to a method for producing such an insulating coating. The method of the invention comprises the steps of preparing a treatment solution of at least one hydrolysable organomagnesium compound and/or of at least one hydrolysable magnesium salt, capable of forming a homogeneous polymer layer of magnesium oxyhydroxide by hydrolysis/condensation reaction with water; depositing the treatment solution of the hydrolysable organomagnesium compound or of the hydrolysable magnesium salt, onto a surface to form a magnesium oxide-based layer; and densifying the layer formed at a temperature of less than or equal to 1000° C.
    Type: Application
    Filed: July 23, 2014
    Publication date: November 13, 2014
    Inventors: Céline BONDOUX, Philippe PRENE, Philippe BELLEVILLE, Robert JERISIAN
  • MgO-based coating for electrically insulating semiconductive substrates and production method thereof
    Patent number: 8821961
    Abstract: The present invention relates to a magnesium oxide-based (MgO) inorganic coating intended to electrically insulate semiconductive substrates such as silicon carbide (SiC), and to a method for producing such an insulating coating. The method of the invention comprises the steps of preparing a treatment solution of at least one hydrolysable organomagnesium compound and/or of at least one hydrolysable magnesium salt, capable of forming a homogeneous polymer layer of magnesium oxyhydroxide by hydrolysis/condensation reaction with water; depositing the treatment solution of the hydrolysable organomagnesium compound or of the hydrolysable magnesium salt, onto a surface to form a magnesium oxide-based layer; and densifying the layer formed at a temperature of less than or equal to 1000° C.
    Type: Grant
    Filed: October 12, 2005
    Date of Patent: September 2, 2014
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Céline Bondoux, Philippe Prene, Philippe Belleville, Robert Jerisian
  • Mgo-Based Coating for Electrically Insulating Semiconductive Substrates and Production Method Thereof
    Publication number: 20080258270
    Abstract: The present invention relates to a magnesium oxide-based (MgO) inorganic coating intended to electrically insulate semiconductive substrates such as silicon carbide (SiC), and to a method for producing such an insulating coating. The method of the invention comprises the steps of preparing a treatment solution of at least one hydrolysable organomagnesium compound and/or of at least one hydrolysable magnesium salt, capable of forming a homogeneous polymer layer of magnesium oxyhydroxide by hydrolysis/condensation reaction with water; depositing the treatment solution of the hydrolysable organomagnesium compound or of the hydrolysable magnesium salt, onto a surface to form a magnesium oxide-based layer; and densifying the layer formed at a temperature of less than or equal to 1000° C.
    Type: Application
    Filed: October 12, 2005
    Publication date: October 23, 2008
    Applicant: Commissariat a L'Energie Atomique
    Inventors: Celine Bondoux, Philippe Prene, Philippe Belleville, Robert Jerisian