Abstract: The disclosure relates to a method of joining two semi-conductor substrates by molecular adhesion comprising: a step a) of bringing a first and a second substrate into intimate contact in order to form an assembly having a bonding interface; a step b) of reaction-annealing the bonding interface at a first temperature higher than a predetermined first temperature, this step b) generating bubbles at the joining interface; a step c) of at least partially debonding the two substrates at the bonding interface in order to eliminate the bubbles; and a step d) of bringing the first and the second substrate into intimate contact at the bonding interface in order to reform the assembly.