Patents by Inventor Céline PASCAL

Céline PASCAL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240229235
    Abstract: The present invention relates to a method for fabricating cobalt interconnects and an electrolyte enabling it to be implemented. The electrolyte of pH less than 4.0 comprises cobalt ions, chloride ions and organic additives, including an alpha-hydroxy carboxylic acid and an amine chosen from polyethyleneimine or benzotriazole.
    Type: Application
    Filed: February 8, 2022
    Publication date: July 11, 2024
    Inventors: Hermine Marie Berthon, Mikailou Thiam, Dominique Suhr, Yeeseul Kim, Céline Pascale Doussot
  • Publication number: 20240133028
    Abstract: The present invention relates to a method for fabricating cobalt interconnects and an electrolyte enabling it to be implemented. The electrolyte of pH less than 4.0 comprises cobalt ions, chloride ions and organic additives, including an alpha-hydroxy carboxylic acid and an amine chosen from polyethyleneimine or benzotriazole.
    Type: Application
    Filed: February 8, 2022
    Publication date: April 25, 2024
    Inventors: Hermine Marie Berthon, Mikailou Thiam, Dominique Suhr, Yeeseul Kim, Céline Pascale Doussot
  • Patent number: 9853181
    Abstract: A method for preparing silicon substrate having average crystallite size greater than or equal to 20 ?m, including at least the steps of: (i) providing polycrystalline silicon substrate of which average grain size is less than or equal to 10 ?m; (ii) subjecting substrate to overall homogeneous plastic deformation, at temperature of at least 1000° C.; (iii) subjecting substrate to localized plastic deformation in plurality of areas of substrate, called external stress areas, spacing between two consecutive areas being at least 20 ?m, local deformation of substrate being strictly greater than overall deformation carried out in step (ii); step (iii) being able to be carried out subsequent to or simultaneous to step (ii); and (iv) subjecting substrate obtained in step (iii) to recrystallization heat treatment in solid phase, at temperature strictly greater than temperature used in step (ii), in order to obtain desired substrate.
    Type: Grant
    Filed: September 24, 2014
    Date of Patent: December 26, 2017
    Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Jean-Marie Lebrun, Jean-Paul Garandet, Jean-Michel Missiaen, Céline Pascal
  • Publication number: 20160211404
    Abstract: A method for preparing silicon substrate having average crystallite size greater than or equal to 20 ?m, including at least the steps of: (i) providing polycrystalline silicon substrate of which average grain size is less than or equal to 10 ?m; (ii) subjecting substrate to overall homogeneous plastic deformation, at temperature of at least 1000° C.; (iii) subjecting substrate to localised plastic deformation in plurality of areas of substrate, called external stress areas, spacing between two consecutive areas being at least 20 ?m, local deformation of substrate being strictly greater than overall deformation carried out in step (ii); step (iii) being able to be carried out subsequent to or simultaneous to step (ii); and (iv) subjecting substrate obtained in step (iii) to recrystallisation heat treatment in solid phase, at temperature strictly greater than temperature used in step (ii), in order to obtain desired substrate.
    Type: Application
    Filed: September 24, 2014
    Publication date: July 21, 2016
    Applicant: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Jean-Marie LEBRUN, Jean-Paul GARANDET, Jean-Michel MISSIAEN, Céline PASCAL