Abstract: A method for making metal gate MOS capacitors with standard silicon gates processes, including the steps of providing a semiconductor substrate and defining active areas and capacitor areas therein, forming field oxide regions that generally surround the active areas and the capacitor areas, forming a gate oxide layer over the active areas and the capacitor areas, and forming polysilicon gates over the active areas. Highly doped source and drain regions in the active areas and highly doped bottom capacitor plate regions in the capacitor areas are then formed, and blanket oxide layer is deposited over the semiconductor structure. The capacitor areas are opened to expose the highly doped bottom capacitor plate regions, and the semiconductor structure is heated to reflow the deposited oxide layer and to grow a capacitor oxide layer over the exposed capacitor areas.