Patents by Inventor C. Richard Guarnieri
C. Richard Guarnieri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6858357Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained by this process. A post deposition process is implemented to obtain the desired properties (stability of optical properties with respect to laser irradiation and acid treatment) for use in industry. A special fabrication process for the sputter target is implemented to lower the defects of the film.Type: GrantFiled: September 8, 2003Date of Patent: February 22, 2005Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Katherina E. Babich, Cameron James Brooks, S. Jay Chey, C. Richard Guarnieri, Michael Straight Hibbs, Kenneth Christopher Racette
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Publication number: 20040053026Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained by this process. A post deposition process is implemented to obtain the desired properties (stability of optical properties with respect to laser irradiation and acid treatment) for use in industry. A special fabrication process for the sputter target is implemented to lower the defects of the film.Type: ApplicationFiled: September 8, 2003Publication date: March 18, 2004Inventors: Marie Angelopoulos, Katherina E. Babich, Cameron James Brooks, S. Jay Chey, C. Richard Guarnieri, Michael Straight Hibbs, Kenneth Christopher Racette
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Patent number: 6689540Abstract: Compositions comprising a polymer having silicon, germanium and/or tin; and a protecting group grafted onto a polymeric backbone are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.Type: GrantFiled: January 9, 2002Date of Patent: February 10, 2004Assignee: International Business Machines CorporationInventors: Ari Aviram, C. Richard Guarnieri, Wu-Song Huang, Ranee W. Kwong, David R. Medeiros
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Patent number: 6653027Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained by this process. A post deposition process is implemented to obtain the desired properties (stability of optical properties with respect to laser irradiation and acid treatment) for use in industry. A special fabrication process for the sputter target is implemented to lower the defects of the film.Type: GrantFiled: February 26, 2001Date of Patent: November 25, 2003Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Katherina E. Babich, Cameron James Brooks, S. Jay Chey, C. Richard Guarnieri, Michael Straight Hibbs, Kenneth Christopher Racette
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Patent number: 6503692Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.Type: GrantFiled: June 7, 2002Date of Patent: January 7, 2003Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Ari Aviram, C. Richard Guarnieri, Wu-Song Huang, Ranee Kwong, Wayne M. Moreau
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Publication number: 20020187422Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.Type: ApplicationFiled: June 7, 2002Publication date: December 12, 2002Applicant: International Business Machines CorporationInventors: Marie Angelopoulos, Ari Aviram, C. Richard Guarnieri, Wu-Song Huang, Ranee Kwong, Wayne M. Moreau
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Patent number: 6458907Abstract: Compositions comprising a polymer of organometallic polymerizable monomer acid or ester are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.Type: GrantFiled: October 3, 2000Date of Patent: October 1, 2002Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Ari Aviram, C. Richard Guarnieri, Ranee W. Kwong
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Publication number: 20020119378Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained by this process. A post deposition process is implemented to obtain the desired properties (stability of optical properties with respect to laser irradiation and acid treatment) for use in industry. A special fabrication process for the sputter target is implemented to lower the defects of the film.Type: ApplicationFiled: February 26, 2001Publication date: August 29, 2002Inventors: Marie Angelopoulos, Katherina E. Babich, Cameron James Brooks, S. Jay Chey, C. Richard Guarnieri, Michael Straight Hibbs, Kenneth Christopher Racette
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Patent number: 6436605Abstract: The reactive ion etching resistance of radiation sensitive resist composition is enhanced by adding at least one organometallic compound to a radiation sensitive polymer. The resist composition can be patterned and used as mask for patterning an underlying layer.Type: GrantFiled: July 12, 1999Date of Patent: August 20, 2002Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Ari Aviram, Edward D. Babich, Timothy Allan Brunner, Thomas Benjamin Faure, C. Richard Guarnieri, Ranee W. Kwong, Karen E. Petrillo
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Patent number: 6420084Abstract: The invention provides improved resist compositions and lithographic methods using the resist compositions of the invention. The resist compositions of the invention are acid-catalyzed resists which are characterized by the presence of an SiO-containing polymer. The invention also encompasses methods of forming patterned material layers (especially conductive, semiconductive, or magnetic material structures) using the combination of the SiO-containing resist and a halogen compound-containing pattern transfer etchant where the halogen is Cl, Br or I.Type: GrantFiled: June 23, 2000Date of Patent: July 16, 2002Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Ari Aviram, C. Richard Guarnieri, Wu-Song Huang, Ranee Kwong, Robert N. Lang, Arpan P. Mahorowala, David R. Medeiros, Wayne M. Moreau
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Patent number: 6420088Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.Type: GrantFiled: June 23, 2000Date of Patent: July 16, 2002Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Ari Aviram, C. Richard Guarnieri, Wu-Song Huang, Ranee Kwong, Wayne M. Moreau
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Publication number: 20020090574Abstract: Compositions comprising a polymer having silicon, germanium and/or tin; and a protecting group grafted onto a polymeric backbone are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.Type: ApplicationFiled: January 9, 2002Publication date: July 11, 2002Inventors: Ari Aviram, C. Richard Guarnieri, Wu-Song Huang, Ranee W. Kwong, David R. Medeiros
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Patent number: 6346362Abstract: Compositions comprising a polymer having silicon, germanium and/or tin; and a protecting group grafted onto a polymeric backbone are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.Type: GrantFiled: June 15, 2000Date of Patent: February 12, 2002Assignee: International Business Machines CorporationInventors: Ari Aviram, C. Richard Guarnieri, Wu-Song Huang, Ranee W. Kwong, David R. Medeiros
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Patent number: 6180291Abstract: A static resistant reticle for use in photolithography having optimal transmission and reduced electrostatic discharge. The reticle comprises a substrate, a patterning layer, and two layers of material having a first refractive index and a second refractive index wherein the first refractive index is greater than the second refractive index and at least one of the layers is conductive. The refractive indices and thickness of the layers are matched to create an anti-reflective coating. The anti-reflective coating optimizes transmission of light through the reticle substrate to about 98.0% to about 99.5% at a wavelength of about 360 nm to about 370 nm. The conductivity of at least one of the layers reduces electrostatic discharge further improving delineation of the pattern projected onto a silicon wafer of a semiconductor device. Preferably, the anti-reflective coating comprises two or more layers of cermet material.Type: GrantFiled: January 22, 1999Date of Patent: January 30, 2001Assignee: International Business Machines CorporationInventors: Andrew Bessy, James P. Doyle, Vaughn P. Gross, C. Richard Guarnieri, Rick J. Heh, Kenneth D. Murray, James L. Speidell
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Patent number: 6171757Abstract: Compositions comprising a polymer of organometallic polymerizable monomer acid or ester are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.Type: GrantFiled: July 12, 1999Date of Patent: January 9, 2001Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Ari Aviram, C. Richard Guarnieri, Ranee W. Kwong
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Patent number: 5716486Abstract: A device for reducing plasma irregularities includes an electrode assembly capable of applying an electric potential to said plasma. The electrode assembly includes a portion for reducing the plasma irregularities. The portion which reduces the plasma irregularities includes alternately a buried portion which is capable of altering the potential within the buried element, or else a conditioned portion of the surface which controls reflectivity and/or emissivity of portions of a surface of the electrode assembly differently.Type: GrantFiled: April 19, 1996Date of Patent: February 10, 1998Inventors: Gary S. Selwyn, Manoj Dalvie, C. Richard Guarnieri, James J. McGill, Gary W. Rubolff, Maheswaran Surendra
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Patent number: 5622635Abstract: A method of gas plasma treating a workpiece in a process chamber having RF coil outside the chamber, a flat dielectric window, and a electrically conducting shield, adapted to be located between the RF coil and the dielectric window. The shield comprises a planar body section having a periphery, central opening, and outer gaps forming a substantially continuous opening about the periphery. A uniform magnetic field, inductively coupled with the plasma, is formed by routing the flux lines of the magnetic field through the central opening and outer gaps of the shield. Contamination from sputtering is substantially eliminated by reducing the capacitive electric fields generated by the coil that interfere with the inductive coupling between the coil and the gas plasma.Type: GrantFiled: April 5, 1995Date of Patent: April 22, 1997Assignee: International Business Machines CorporationInventors: Jerome J. Cuomo, C. Richard Guarnieri, Jeffrey A. Hopwood
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Patent number: 5433812Abstract: A shield for shunting capacitive electric fields generated by an RF coil away from a gas plasma process chamber's dielectric window and toward ground. The shield comprise an electrically conducting, substantially planar body section having a periphery and adapted to be located between the RF coil and the dielectric window during plasma treating of a workpiece. A central opening in the body section and gaps about the periphery permit RF magnetic fields to inductively couple with the plasma and return around the coil, respectively. The shield substantially reduces interference by capacitive electric fields generated by the coil with inductive coupling between the coil and the gas plasma, thus substantially eliminating contamination from sputtering of the dielectric window by the capacitive electric fields.Type: GrantFiled: January 19, 1993Date of Patent: July 18, 1995Assignee: International Business Machines CorporationInventors: Jerome J. Cuomo, C. Richard Guarnieri, Jeffrey A. Hopwood
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Patent number: 5064681Abstract: The invention relates to a dry method for depositing a material on a substrate having nucleating sites for the material which includes deposition of a material in the vapor phase on the substrate and simultaneous ablation of the substrate by ablation methods for controlled removal of the nucleating sites from the substrate. The removal of the nucleating sites is controlled to minimize or selectively prevent coating of the substrate by the material. The method can be used to form material patterns on the substrate such as electrical circuits or for adhering material to a substrate that is difficult to metallize such as organic polymers or ceramics.Type: GrantFiled: June 8, 1989Date of Patent: November 12, 1991Assignee: International Business Machines CorporationInventors: Christopher J. Berry, Jerome J. Cuomo, C. Richard Guarnieri, Dennis S. Yee
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Patent number: 4925700Abstract: A process for forming chromium dioxide thin films which are receptive to high density magnetic recording. The process comprises depositing both chromium and oxygen on a substrate by evaporative techniques and concurrently bombarding the substrate with high energy ions of at least one of the film constituents to form a latent CrO.sub.x film forming layer. The process is carried out at approximately room temperature.The as-grown latent film forming layer is subsequently heat treated by a rapid thermal anneal step which raises the temperature of the as-grown film to about 500.degree. C. The rapid thermal anneal step preferably comprises a series of at least five separte pulses over a 10-second time span. After the rapid thermal anneal, the sample is rapidly quenched to room temperature.Type: GrantFiled: October 28, 1988Date of Patent: May 15, 1990Assignee: International Business Machines CorporationInventors: Blasius Brezoczky, Jerome J. Cuomo, C. Richard Guarnieri, Kumbakonam V. Ramanathan, Srinvasrao A. Shivashankar, David A. Smith, Dennis S. Yee