Patents by Inventor C. S. Tsai

C. S. Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080234839
    Abstract: A control system used to control a controlled plant includes a main control unit, a first tuning unit, and a second tuning unit. The control system regulated by two weighting parameters of a first multiple and a second multiple, robustness and rapid response are attained, and excess of the output signal the controlled plant generates disappears or approaches zero. The control system has technical features of objective bandwidth, offsetting of low frequency disturbance, and matching of transfer functions. By designing the main control unit, the first tuning unit, and the second tuning unit, regulating the two weighting parameters of the first multiple and the second multiple, and tuning the actual system, the above technical features are obtained.
    Type: Application
    Filed: June 1, 2007
    Publication date: September 25, 2008
    Applicant: DELTA ELECTRONICS, INC.
    Inventor: C. S. Tsai
  • Publication number: 20080184805
    Abstract: A method for testing integrated circuits includes forming a plurality of substantially identical first test structures, each comprising a first via structure connected to a first metal line, stress testing the plurality of first test structures to obtain a first plurality of failure times, and forming a plurality of substantially identical second test structures, each comprising a second via structure connected to a second metal line, wherein the second via structure has a substantially different reliability from the first via structure, and wherein the first metal line and the second metal line are substantially identical. The method further includes stress testing the plurality of second test structures to obtain a second plurality of failure times, and determining early failures of the plurality of first test structures and the plurality of second test structures.
    Type: Application
    Filed: March 29, 2007
    Publication date: August 7, 2008
    Inventors: Yi-Lung Cheng, BL Lin, CC Peng, C.S. Tsai, Hway-Chi Lin
  • Patent number: 5807789
    Abstract: The present invention is a method for forming a shallow trench with tapered profile and round corners for the application of shallow trench isolation (STI). This invention utilizes a multiple-step dry etching process with reduced RF power and increased pressure to etch a shallow trench. This takes advantage of different degree of polymer deposition in different steps by varing the pressure and the RF power. Thus, a shallow trench with tapered profile and round corners is achieved.
    Type: Grant
    Filed: March 20, 1997
    Date of Patent: September 15, 1998
    Assignee: Taiwan Semiconductor Manufacturing, Co., Ltd.
    Inventors: Chao-Cheng Chen, C. S. Tsai, C. H. Yu