Abstract: Ion sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution.

Abstract: A microfluidics valve comprises at least two substrates (1) between which there is at least a microchannel (5). It additionally comprises at least a barrier (4) of a meltable material, placed in the microchannel. The valve further comprises at least an optical heater (6) placed in correspondence with the barrier (4) and at least a section of one of the substrates (1), in correspondence with the optical heater (6), is transparent. The optical heater is a colored line that, when is illuminated with a light source, is heated and releases the heat to the barrier (4) thus melting the part of it that is closer to the line.

Abstract: Ion sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution.

Abstract: Ion sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution.

Abstract: The present invention concerns an ion sensor based on differential measurement, that by means of at least two ion-sensitive field-effect transistors, compares the concentration of certain ions in a solution to be measured with the concentration of certain ions in a reference solution contained in a micro-reservoir with a micro-channel. To do this, the micro-reservoir and the micro-channel cover at least the gate of one of the ion-sensitive field-effect transistors and make up a unit partially filled with a porous material that covers the entirety of the aforementioned gate and at least the base of the micro-channel.

Abstract: Ion sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution.

Abstract: Ion sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution.

Abstract: The present invention concerns an ion sensor based on differential measurement, that by means of at least two ion-sensitive field-effect transistors, compares the concentration of certain ions in a solution to be measured with the concentration of certain ions in a reference solution contained in a micro-reservoir with a micro-channel. To do this, the micro-reservoir and the micro-channel cover at least the gate of one of the ion-sensitive field-effect transistors and make up a unit partially filled with a porous material that covers the entirety of the aforementioned gate and at least the base of the micro-channel.

Abstract: Ion sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution.

Abstract: The invention relates to a device for electrically reading microarrays which can be cleaned and used more than once. The device (1, 1?, 1?) for reading microarrays (6) comprises the following elements: a base (2, 2?, 2?) comprising support means (3, 3?, 3?) for positioning the test surface (7) of the microarray (6) parallel to a reading surface (4) of the base (2, 2?, 2?); a matrix of transducers (5, 5?, 5?) disposed on the reading surface (4) of the base (2, 2?, 2?), transforming a variation of an electrical or chemical value into a variation of an electrical value; and reading means (10) which are connected to the transducers (5, 5?, 5?) and interpret the electrical signals from the transducers (5, 5?, 5?).