Patents by Inventor C. Shen

C. Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • One-transistor random access memory technology compatible with metal gate process
    Publication number: 20060017115
    Abstract: One-transistor RAM technology compatible with a metal gate process fabricates a metal gate electrode formed of the same metal material as a top electrode of a MIM capacitor embedded isolation structure. A gate dielectric layer is formed of the same high-k dielectric material as a capacitor dielectric of the MIM capacitor embedded isolation structure.
    Type: Application
    Filed: July 22, 2004
    Publication date: January 26, 2006
    Inventors: Kuo-Chi Tu, Kuo-Chyuan Tzeng, Chung-Yi Chen, C. Shen, Chun-Yao Chen, Hsiang-Fan Lee