Abstract: Methods of semiconductor processing and apparatuses are disclosed. An organic solvent is applied over a surface of a material layer on a substrate in which the material layer includes a short-chain structure. A fluorine-containing solution is applied over the surface of the material layer to substantially remove the material layer from the substrate. The apparatus comprises the wafer holder coupled to the organic solvent source and the fluorine solution source. The wafer holder accommodates at least one wafer. The organic solvent source supplies an organic solvent with a temperature from about 18° C. to about 40° C., a concentration from about 90 w. % to about 100 w. % and is applied over the substrate about 100 seconds or more. The fluorine solution source containing fluorine solution supplies the fluorine-containing solution with a temperature from about 18° C. to about 70° C. and a concentration from about 1 w. % to about 49 w. %.