Patents by Inventor C. Ward Trussell, Jr.

C. Ward Trussell, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6914928
    Abstract: A diode pumped solid state laser using a laser diode bar or a stack of bars with cylindrical lenses is used to end pump a rectangular cross section solid state laser slab. The combination of lenses and polished slab surfaces provides overlap of the pump light with the laser mode combined with sufficient length of material to absorb all of the pump light to produce a compact, efficient laser source.
    Type: Grant
    Filed: June 14, 2001
    Date of Patent: July 5, 2005
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventor: C. Ward Trussell, Jr.
  • Patent number: 6904074
    Abstract: A diode-pumped microlaser in accordance with the present invention includes a diode pump, a first lens, a second lens and a laser glass. The diode pump generates an input pump beam. The first lens and second lens manipulate the pump beam by collimating the pump beam in focal planes that are perpendicular to each other. The laser glass receives the manipulated pump beam from the second lens and converts the pump beam into a laser beam. The laser glass is further doped with predetermined amounts by weight of Erbium and Ytterbium to ensure that an output laser beam with an eyesafe wavelength is generated. The microlaser further includes a passive Q-switch made of a Cobalt-spinel material, which receives the output laser beam and generates laser pulses using passive switching techniques, independent of any external temperature control. This configuration allows the microlaser to function as a laser rangefinder over extended temperature ranges in a manner that is eyesafe to the user.
    Type: Grant
    Filed: March 18, 2003
    Date of Patent: June 7, 2005
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: C. Ward Trussell, Jr., Vernon King
  • Patent number: 4371968
    Abstract: A monolithic laser optical cavity structure and method of forming by use of planar photolithographic and crystal regrowth techniques. An original growth multilayer double heterostructure laser structure is grown by LPE on a N+-GaAs substrate. V-grooves are then etched in the epitaxial layers down through the optical cavity by photolithographic techniques. GaAlAs is grown in the V-grooves by crystal regrowth techniques up to the original surface of the laser wafer thus isolating the lasers from each other. The lasers are then separated to form laser arrays.
    Type: Grant
    Filed: July 1, 1981
    Date of Patent: February 1, 1983
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: C. Ward Trussell, Jr., James E. Miller