Abstract: Two-color (two-photon) excitation with two confocal excitation beams is demonstrated with a Raman shifter as excitation light source. Two-color excitation fluorescence is obtained from Coumarin 6H dye sample (peak absorption=394 nm, peak fluorescence=490 nm) that is excited using the first two Stokes outputs (683 nm, 954 nm, two-color excitation=398 nm) of a Raman shifter pumped by a 6.5 nsec pulsed 532 nm-Nd:YAG laser (Repetition rate=10 Hz). The two Stokes pulses overlap for a few nanoseconds and two-color fluorescence is generateven with focusing objectives of low numerical apertures (NA?0.4). We observed the linear dependence of the two-color fluorescence signal with the product of the average intensities of the two Stokes excitation beams. The two-color fluorescence distribution is strongly localized around the common focus of the confocal excitation beams.

Abstract: A method is disclosed that permits the generation of exclusive high-contrast images of semiconductor sites in an integrated circuit sample (19). It utilizes the one-photon optical beam-induced current (1P-OBIC) image and confocal reflectance image of the sample that are generated simultaneously from one and the same excitation (probe) light beam that is focused on the sample (19). A 1P-OBIC image is a two-dimensional map of the currents induced by the beam as it is scanned across the circuit surface. 1P-OBIC is produced by an illuminated semiconductor material if the excitation photon energy exceeds the bandgap. The 1P-OBIC image has no vertical resolution because 1P-OBIC is linear with the excitation beam intensity. The exclusive high-contrast image of semiconductor sites is generated by the product of the 1P-OBIC image and the confocal image. High-contrast image of the metal sites are also obtained by the product of the complementary OBIC image and the same confocal image.

Abstract: Two-color (two-photon) excitation with two confocal excitation beams is demonstrated with a Raman shifter as excitation light source. Two-color excitation fluorescence is obtained from Coumarin 6H dye sample (peak absorption=394 nm, peak fluorescence=490 nm) that is excited using the first two Stokes outputs (683 nm, 954 nm, two-color excitation=398 nm) of a Raman shifter pumped by a 6.5 nsec pulsed 532 nm-Nd:YAG laser (Repetition rate=10 Hz). The two Stokes pulses overlap for a few nanoseconds and two-color fluorescence is generateven with focusing objectives of low numerical apertures (NA?0.4). We observed the linear dependence of the two-color fluorescence signal with the product of the average intensities of the two Stokes excitation beams. The two-color fluorescence distribution is strongly localized around the common focus of the confocal excitation beams.

Abstract: A method is disclosed that permits the generation of exclusive high-contrast images of semiconductor sites in an integrated circuit sample (19). It utilizes the one-photon optical beam-induced current (1P-OBIC) image and confocal reflectance image of the sample that are generated simultaneously from one and the same excitation (probe) light beam that is focused on the sample (19). A 1P-OBIC image is a two-dimensional map of the currents induced by the beam as it is scanned across the circuit surface. 1P-OBIC is produced by an illuminated semiconductor material if the excitation photon energy exceeds the bandgap. The 1P-OBIC image has no vertical resolution because 1P-OBIC is linear with the excitation beam intensity. The exclusive high-contrast image of semiconductor sites is generated by the product of the 1P-OBIC image and the confocal image. High-contrast image of the metal sites are also obtained by the product of the complementary OBIC image and the same confocal image.