Abstract: The present invention discloses a multi-station adaptive walnut shell pre-breaking system, comprising a feeding device and a shell pre-breaking device.

Abstract: Disclosed is a continuous feeding mechanism including a transfer mechanism, wherein the transfer mechanism includes a rotatable indent roller circumferentially provided with a plurality of blanking grooves; a post pin is arranged in each blanking groove; the post pin is connected with a spring; the spring is arranged towards the interior of the indent roller; and the post pin can move along the blanking grooves; a feeding box, wherein the bottom of the feeding box is hollow, and the bottom is arranged above the indent roller or the bottom is fixedly connected with the indent roller; the continuous feeding mechanism is arranged above one side of the transfer mechanism; and an electromagnetic heating mechanism which includes a supporting frame, wherein the transfer mechanism is arranged in the supporting frame, and an electromagnetic coil is circumferentially arranged outside the supporting frame.

Abstract: Disclosed is a continuous feeding mechanism including a transfer mechanism, wherein the transfer mechanism includes a rotatable indent roller circumferentially provided with a plurality of blanking grooves; a post pin is arranged in each blanking groove; the post pin is connected with a spring; the spring is arranged towards the interior of the indent roller; and the post pin can move along the blanking grooves; a feeding box, wherein the bottom of the feeding box is hollow, and the bottom is arranged above the indent roller or the bottom is fixedly connected with the indent roller; the continuous feeding mechanism is arranged above one side of the transfer mechanism; and an electromagnetic heating mechanism which includes a supporting frame, wherein the transfer mechanism is arranged in the supporting frame, and an electromagnetic coil is circumferentially arranged outside the supporting frame.

Abstract: A multi-station adaptive walnut shell pre-breaking system, including a feeding device and a shell pre-breaking device. The feeding device includes a feeding box, a single-helix twister and a double-helix twister are disposed in the feeding box, the single-helix twister and the double-helix twister rotate in opposite directions, and an adjustable spring partition is disposed below the single-helix twister and the double-helix twister; the shell pre-breaking device includes a shell pre-breaking box, a plurality of squeezing stations are provided in the shell pre-breaking box, each of the squeezing stations is provided with a shell pre-breaking assembly, the shell pre-breaking assembly includes a falling U-shaped plate and a squeezing U-shaped plate.

Abstract: The disclosure discloses an automated production system for efficient walnut shell-breaking, kernel-taking and shell-kernel separation, solving the problem that the existing walnut shell breaking device cannot adapt to walnuts having different sizes and shell breaking rate and shell breaking efficiency cannot be ensured. The system can realize efficient shell-breaking, kernel-taking and shell-kernel separation on different varieties of walnuts, is quick in production speed and high in automation degree, and meanwhile is capable of improving entire kernel rate and kernel obtaining rate, reducing the damage rate of the walnut kernel and ensuring the high shell-breaking efficiency and thoroughness of shell and kernel separation.

Abstract: Disclosed is a continuous feeding mechanism including a transfer mechanism, wherein the transfer mechanism includes a rotatable indent roller circumferentially provided with a plurality of blanking grooves; a post pin is arranged in each blanking groove; the post pin is connected with a spring; the spring is arranged towards the interior of the indent roller; and the post pin can move along the blanking grooves; a feeding box, wherein the bottom of the feeding box is hollow, and the bottom is arranged above the indent roller or the bottom is fixedly connected with the indent roller; the continuous feeding mechanism is arranged above one side of the transfer mechanism; and an electromagnetic heating mechanism which includes a supporting frame, wherein the transfer mechanism is arranged in the supporting frame, and an electromagnetic coil is circumferentially arranged outside the supporting frame.

Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.

Abstract: A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate. The method comprises immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry dimension between 1 micrometers and 100 micrometers, a depth dimension between 20 micrometers and 750 micrometers, and an aspect ratio greater than about 2:1; and supplying electrical current to the electrolytic deposition composition to deposit copper metal onto the bottom and sidewall for bottom-up filling to thereby yield a copper filled via feature.

Abstract: A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate. The method comprises immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry dimension between 1 micrometers and 100 micrometers, a depth dimension between 20 micrometers and 750 micrometers, and an aspect ratio greater than about 2:1; and supplying electrical current to the electrolytic deposition composition to deposit copper metal onto the bottom and sidewall for bottom-up filling to thereby yield a copper filled via feature.

Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.

Abstract: Memory systems may include a memory storage including at least a first stripe and a second stripe, the first stripe including data pages corresponding to the first stripe and a first parity page suitable for storing a first XOR parity, and the second stripe including data pages corresponding to the second stripe and a second parity page suitable for storing a second XOR parity, the data pages and parity pages being stored over a plurality of memory dies, wherein each memory die includes a number of planes; and a controller suitable for cyclically interleaving the data pages corresponding to the first stripe and the data pages corresponding to the second stripe.

Abstract: Memory systems may include a memory storage including at least a first stripe and a second stripe, the first stripe including data pages corresponding to the first stripe and a first parity page suitable for storing a first XOR parity, and the second stripe including data pages corresponding to the second stripe and a second parity page suitable for storing a second XOR parity, the data pages and parity pages being stored over a plurality of memory dies, wherein each memory die includes a number of planes; and a controller suitable for cyclically interleaving the data pages corresponding to the first stripe and the data pages corresponding to the second stripe.

Abstract: A digital signal processing (DSP) system includes an analog to digital converter, program random access memory (PRAM), N switching devices, and a control module. The analog to digital converter is configured to convert samples of an analog signal into digital samples. The PRAM includes: N PRAM blocks, where N is an integer greater than one; and code for M digital signal processing functions stored in the N PRAM blocks, where M is an integer greater than one. The N switching devices are configured to connect and disconnect the N PRAM blocks, respectively, to and from a power source. The control module is configured to: control the N switching devices; and execute selected ones of the M digital signal processing functions on the digital samples to produce an output.

Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.

Abstract: A digital signal processing (DSP) system includes an analog to digital converter, program random access memory (PRAM), N switching devices, and a control module. The analog to digital converter is configured to convert samples of an analog signal into digital samples. The PRAM includes: N PRAM blocks, where N is an integer greater than one; and code for M digital signal processing functions stored in the N PRAM blocks, where M is an integer greater than one. The N switching devices are configured to connect and disconnect the N PRAM blocks, respectively, to and from a power source. The control module is configured to: control the N switching devices; and execute selected ones of the M digital signal processing functions on the digital samples to produce an output.

Abstract: A method is provided for depositing a whisker resistant tin-based coating layer on a surface of a copper substrate. The method is useful for preparing an article comprising a copper substrate having a surface; and a tin-based coating layer on the surface of the substrate, wherein the tin-based coating layer has a thickness between 0.5 micrometers and 1.5 micrometers and has a resistance to formation of copper-tin intermetallics, wherein said resistance to formation of copper-tin intermetallics is characterized in that, upon exposure of the article to at least seven heating and cooling cycles in which each cycle comprises subjecting the article to a temperature of at least 217° C. followed by cooling to a temperature between about 20° C. and about 28° C., there remains a region of the tin coating layer that is free of copper that is at least 0.25 micrometers thick.

Abstract: A method and composition for enhancing corrosion resistance, wear resistance, and contact resistance of a device comprising a copper or copper alloy substrate and at least one metal-based layer on a surface of the substrate. The composition comprises a phosphorus oxide compound selected from the group consisting of a phosphonic acid, a phosphonate salt, a phosphonate ester, a phosphoric acid, a phosphate salt, a phosphate ester, and mixtures thereof; an organic compound comprising a nitrogen-containing functional group; and a solvent having a surface tension less than about 50 dynes/cm as measured at 25° C.

Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.

Abstract: A biological control is disclosed for termites, including subterranean termites such as C. formosanus, comprising a mixture of a chitin synthesis inhibitor such as lufenuron with a pathogen or opportunistic pathogen. The combination greatly enhances the effectiveness above that of the individual components. For example, P. aeruginosa is commonly found in association with termites, but it is not normally harmful to termites. However, in the presence of lufenuron, P. aeruginosa becomes an opportunistic pathogen that kills termites. As another example, B. thuringiensis, which otherwise has shown only limited effectiveness against termites, has greatly enhanced lethality in combination with lufenuron. In another aspect a termite toxicant is administered to termites in a clay-based bait. Clay acts as an attractant for subterranean termites such as C. formosanus, and a clay bait can increase a colony's consumption of a toxicant.

Abstract: A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate. The method comprises immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry dimension between 1 micrometers and 100 micrometers, a depth dimension between 20 micrometers and 750 micrometers, and an aspect ratio greater than about 2:1; and supplying electrical current to the electrolytic deposition composition to deposit copper metal onto the bottom and sidewall for bottom-up filling to thereby yield a copper filled via feature.