Patents by Inventor CAI Yingda

CAI Yingda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TVS Diode and Assembly Having Asymmetric Breakdown Voltage
    Publication number: 20230230972
    Abstract: In one embodiment, an asymmetric TVS device may include a semiconductor substrate, comprising an inner region, the inner region having a first polarity, and a first surface region, disposed on a first surface of the semiconductor substrate, the first surface region comprising a second polarity, opposite the first polarity. The asymmetric TVS device may also include a second surface region, comprising the second polarity, and disposed on a second surface of the semiconductor substrate, opposite the first surface, wherein the first surface region comprises a first dopant concentration, and wherein the second surface region comprises a second dopant concentration, greater than the first dopant concentration.
    Type: Application
    Filed: March 20, 2023
    Publication date: July 20, 2023
    Applicant: Littelfuse Semiconductor (Wuxi) Co., Ltd.
    Inventors: Jianfei ZENG, CAI Yingda
  • TVS Diode and Assembly Having Asymmetric Breakdown Voltage
    Publication number: 20210175224
    Abstract: In one embodiment, an asymmetric TVS device may include a semiconductor substrate, comprising an inner region, the inner region having a first polarity, and a first surface region, disposed on a first surface of the semiconductor substrate, the first surface region comprising a second polarity, opposite the first polarity. The asymmetric TVS device may also include a second surface region, comprising the second polarity, and disposed on a second surface of the semiconductor substrate, opposite the first surface, wherein the first surface region comprises a first dopant concentration, and wherein the second surface region comprises a second dopant concentration, greater than the first dopant concentration.
    Type: Application
    Filed: December 4, 2020
    Publication date: June 10, 2021
    Applicant: Littelfuse Semiconductor (Wuxi) Co., Ltd.
    Inventors: Jianfei ZENG, CAI Yingda