Abstract: Some embodiments provide a method of identifying packet latency in a software defined datacenter (SDDC) that includes a network and multiple host computers executing multiple machines. At a first host computer, the method identifies and stores (i) multiple time values associated with several packet processing operations performed on a particular packet sent by a first machine executing on the first host computer, and (ii) a time value associated with packet transmission through the SDDC network from the first host computer to a second host computer that is a destination of the particular packet. The method provides the stored time values to a set of one or more controllers to process to identify multiple latencies experienced by multiple packets processed in the SDDC.

Abstract: The present invention discloses a flip-chip LED chip used in a backlight and a producing method thereof. The flip-chip LED chip used in the backlight comprises a substrate, an epitaxial layer, a transparent conductive layer, an insulating layer, a first reflecting layer, a second reflecting layer, a first electrode, and a second electrode. In the present invention, the first reflecting layer and the second reflecting layer are formed on both sides of the substrate. By adjusting the reflectance of the first reflecting layer and the second reflecting layer, the light emitted by the epitaxial layer is reflected by the first reflecting layer and the second reflecting layer, resulting in 20-40% of the light being emitted from the back of the chip, and 60-80% of the light being emitted from the side of the chip. This increases the light uniformity of the LED backlight.

Abstract: An epitaxial structure for an LED is provided. The epitaxial structure includes a patterned epitaxial defect barrier layer disposed over a first portion of a substantially flat substrate to expose a second portion of the substrate. The epitaxial structure also includes a patterned buffer layer over the second portion of the substrate. The epitaxial structure further includes a first semiconductor layer over the patterned buffer layer and the patterned epitaxial defect barrier layer, an active layer over the first semiconductor layer, and a second semiconductor layer over the active layer.

Abstract: An epitaxial structure for an LED is provided. The epitaxial structure includes a patterned epitaxial defect barrier layer disposed over a first portion of a substantially flat substrate to expose a second portion of the substrate. The epitaxial structure also includes a patterned buffer layer over the second portion of the substrate. The epitaxial structure further includes a first semiconductor layer over the patterned buffer layer and the patterned epitaxial defect barrier layer, an active layer over the first semiconductor layer, and a second semiconductor layer over the active layer.