Patents by Inventor Caleb Miskin

Caleb Miskin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250137723
    Abstract: A chamber body includes a ceramic weldment having a lower wall, a sidewall, and an upper wall. The sidewall is coupled to the lower wall by a sidewall-to-lower wall weld and the upper wall is coupled to the sidewall by a sidewall-to-upper wall weld. The upper wall has an upper wall plate portion and an upper wall rib portion extending therefrom formed from a singular quartz workpiece using a subtractive manufacturing technique, the upper wall further having a unwelded ribbed region overlying the lower wall. Chamber arrangements, semiconductor processing systems and related methods of making chamber bodies and depositing material layers onto substrates supported within chamber bodies are also described.
    Type: Application
    Filed: October 28, 2024
    Publication date: May 1, 2025
    Inventors: Felix Rabinovich, Terry Parde, Gary Urban Keppers, Amin Azimi, Alicia Almeda, Fauhmee Oudeif, Amir Kajbafvala, Arun Murali, Frederick Aryeetey, Alexandros Demos, Nayna Khosla, Caleb Miskin, Hichem M'Saad, Shivaji Peddeti, Steven Reiter
  • Publication number: 20250112064
    Abstract: A chamber arrangement for a semiconductor processing system includes a chamber body, a substrate support, a first chamber pyrometer, and a second chamber pyrometer. The chamber body has an exterior surface, a hollow interior, and the substrate support is supported for rotation within the interior of the chamber body. The first chamber pyrometer and second chamber pyrometer are optically coupled to the exterior surface of the chamber body. The first chamber pyrometer is configured to acquire a first temperature measurement at a first location on the exterior surface of the chamber body, and the second chamber pyrometer is configured to acquire a second temperature measurement at a second location on the exterior surface of the chamber body. The second location is offset from the first location to throttle temperature across the exterior surface of the chamber body between the first location and the second location. Material layer deposition methods and computer program products are also described.
    Type: Application
    Filed: September 27, 2024
    Publication date: April 3, 2025
    Inventors: Amir Kajbafvala, Arun Murali, Caleb Miskin, Frederick Aryeetey, Alexandros Demos
  • Publication number: 20250112042
    Abstract: A method, comprising supporting a substrate within a chamber of a semiconductor processing system, wherein the substrate comprises a feature including a surface having at least two first regions comprising silicon in an Si(110) crystal orientation and at least one second region comprising silicon in a non-Si(110) crystal orientation, wherein the at least one second region is disposed between the first regions, epitaxially growing a silicon-containing material on the at least two first regions in a Si(100) crystal orientation preferentially to the Si(110) crystal orientation and extending the silicon-containing material over the second region.
    Type: Application
    Filed: September 27, 2024
    Publication date: April 3, 2025
    Inventors: Gregory Deye, Caleb Miskin, Arun Murali
  • Publication number: 20250084534
    Abstract: A method of depositing one or more epitaxial material layers, a device structure formed using the method and a system for performing the method are disclosed. Exemplary methods include coating a surface of a reaction chamber with a precoat material, processing a number of substrates, and then cleaning the reaction chamber.
    Type: Application
    Filed: November 27, 2024
    Publication date: March 13, 2025
    Inventors: Amir Kajbafvala, Caleb Miskin
  • Publication number: 20250079167
    Abstract: A method of forming a semiconductor structure includes seating a substrate on a substrate support arranged within a chamber arrangement of a semiconductor processing system, flowing a boron-containing precursor to the chamber arrangement at a first boron-containing precursor mass flow rate, and depositing a first portion of a first SiGe:B layer using the boron-containing precursor.
    Type: Application
    Filed: August 26, 2024
    Publication date: March 6, 2025
    Inventors: Ernesto Suarez, Amir Kajbafvala, Arun Murali, Caleb Miskin, Alexandros Demos
  • Publication number: 20250051918
    Abstract: A method of forming a structure is provided. The method includes supporting a substrate within a reaction chamber of a semiconductor processing system, flowing a silicon precursor and a germanium precursor into the reaction chamber, and forming a silicon-germanium layer overlaying the substrate with the silicon containing precursor and the germanium precursor. Concentration of the germanium precursor within the reaction chamber is increased during the forming of the silicon-germanium layer overlaying the substrate. Methods of forming film stack structures, semiconductor device structures, and semiconductor processing systems are also described.
    Type: Application
    Filed: October 25, 2024
    Publication date: February 13, 2025
    Inventors: Amir Kajbafvala, Yanfu Lu, Caleb Miskin
  • Publication number: 20250034714
    Abstract: A reflector includes a reflector body having a slotted surface, a planar surface, and an ellipsoidal surface. The planar surface is opposite the slotted surface and is separated from the slotted surface by a thickness of the reflector body. The ellipsoidal surface is offset from the planar surface, is opposite the slotted surface and separated from the slotted surface by the thickness of the reflector body and spans the slotted surface of the reflector body. The ellipsoidal surface defines an elliptical profile that is orthogonal relative to the planar surface to concentrate heat flux at a distal focus of the elliptical profile using electromagnetic radiation reflected by the ellipsoidal surface of the reflector body. Semiconductor processing systems and material layer deposition methods are also described.
    Type: Application
    Filed: July 25, 2024
    Publication date: January 30, 2025
    Inventors: Wentao Wang, Peipei Gao, Kishor Patil, Aniket Chitale, Fan Gao, Xing Lin, Alexandros Demos, Amir Kajbafvala, Emesto Suarez, Arun Murali, Caleb Miskin, Bubesh Babu Jotheeswaran
  • Patent number: 12173404
    Abstract: A method of depositing one or more epitaxial material layers, a device structure formed using the method and a system for performing the method are disclosed. Exemplary methods include coating a surface of a reaction chamber with a precoat material, processing a number of substrates, and then cleaning the reaction chamber.
    Type: Grant
    Filed: February 24, 2021
    Date of Patent: December 24, 2024
    Assignee: ASM IP Holding B.V.
    Inventors: Amir Kajbafvala, Caleb Miskin
  • Patent number: 12163227
    Abstract: A method of forming a structure is provided. The method includes supporting a substrate within a reaction chamber of a semiconductor processing system, flowing a silicon precursor and a germanium precursor into the reaction chamber, and forming a silicon-germanium layer overlaying the substrate with the silicon containing precursor and the germanium precursor. Concentration of the germanium precursor within the reaction chamber is increased during the forming of the silicon-germanium layer overlaying the substrate. Methods of forming film stack structures, semiconductor device structures, and semiconductor processing systems are also described.
    Type: Grant
    Filed: March 2, 2022
    Date of Patent: December 10, 2024
    Assignee: ASM IP Holding B.V.
    Inventors: Amir Kajbafvala, Yanfu Lu, Caleb Miskin
  • Publication number: 20240355688
    Abstract: A method for removing contaminants from an upper surface of a substrate inside various chambers of a semiconductor processing system is provided. The method may comprise heating at least a portion of the upper surface to a predetermined upper surface bake temperature to induce a chemical reaction of the contaminants with hydrogen gas in the deposition chamber and remove contaminants from the upper surface. The temperature of the bulk material forming the substrate remains substantially lower than the predetermined upper surface bake temperature. After heating the upper surface to remove the contaminants, a material layer may be deposited onto the upper surface. The semiconductor processing system and computer instructions for operating the semiconductor processing system are also described.
    Type: Application
    Filed: April 23, 2024
    Publication date: October 24, 2024
    Inventors: Amir Kajbafvala, Arun Murali, Caleb Miskin
  • Publication number: 20240332016
    Abstract: A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.
    Type: Application
    Filed: June 13, 2024
    Publication date: October 3, 2024
    Inventors: Amir Kajbafvala, Peter Westrom, Joe Margetis, Xin Sun, Caleb Miskin, Yen Lin Leow, Yanfu Lu
  • Patent number: 12057314
    Abstract: A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.
    Type: Grant
    Filed: May 12, 2021
    Date of Patent: August 6, 2024
    Assignee: ASM IP Holding B.V.
    Inventors: Amir Kajbafvala, Peter Westrom, Joe Margetis, Xin Sun, Caleb Miskin, Yen Lin Leow, Yanfu Lu
  • Publication number: 20240218560
    Abstract: A semiconductor processing system includes a precursor delivery arrangement, a chamber arrangement, and a controller. The chamber arrangement is connected to the precursor delivery arrangement.
    Type: Application
    Filed: December 27, 2023
    Publication date: July 4, 2024
    Inventors: Sandeep Ghosh, Robinson James, Caleb Miskin
  • Publication number: 20240222116
    Abstract: A semiconductor processing system, comprising a chamber configured to support a substrate, a first precursor source, a second precursor source and a dopant source connected to the chamber and a controller operably connected the first precursor source, the second precursor source and the dopant source. The controller responsive to instructions recorded on a memory is to support a substrate within a chamber of a semiconductor processing system, flow a first precursor into the chamber in contact with a first surface of the substrate, form a template layer of silicon-containing film on the first surface of the substrate, etch non-uniformities on the first surface of the substrate, flow a dopant-containing precursor into the chamber in contact with a second surface of the substrate wherein the second surface is a top surface of the template layer, and form a nucleation layer on the second surface.
    Type: Application
    Filed: December 28, 2023
    Publication date: July 4, 2024
    Inventors: Gregory Deye, Caleb Miskin
  • Publication number: 20240209510
    Abstract: A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.
    Type: Application
    Filed: March 7, 2024
    Publication date: June 27, 2024
    Inventors: Amir Kajbafvala, Yanfu Lu, Robinson James, Caleb Miskin
  • Publication number: 20240204057
    Abstract: Methods for forming semiconductor stacked structures are disclosed. The methods may include, seating a substrate within a chamber body, and regulating a temperature profile across an upper surface of the substrate during each individual step of a sequential deposition process. Semiconductor stacked structures including two or more bilayers of SiGe/Si with intervening interface layers are also disclosed.
    Type: Application
    Filed: December 14, 2023
    Publication date: June 20, 2024
    Inventors: Amir Kajbafvala, Yanfu Lu, Caleb Miskin
  • Publication number: 20240203734
    Abstract: Methods for forming multilayer structures are disclosed. The methods may include, seating a substrate within a chamber body, and regulating a temperature profile across an upper surface of the substrate during each individual deposition phase of multiphase deposition process. Semiconductor device structures including multilayer structures are also disclosed.
    Type: Application
    Filed: December 14, 2023
    Publication date: June 20, 2024
    Inventors: Maritza Mujica, Ernesto Suarez, Amir Kajbafvala, Rami Khazaka, Arum Murali, Frederick Aryeetey, Yanfu Lu, Caleb Miskin, Alexandros Demos, Bibek Karki
  • Publication number: 20240203733
    Abstract: A material layer deposition method includes supporting one and only one substrate in a chamber arrangement, exposing the substrate to a first material layer precursor and a second material layer precursor, and forming a first material layer overlaying the substrate using the first material layer precursor and the second material layer precursor. The first material layer is exposed to the first material layer to the first material layer precursor and a second material layer formed onto the first material layer using the first material layer precursor. The second material layer precursor includes a germanium-containing material layer precursor and the first material layer precursor includes at least one of trisilane (Si3H8) and tetrasilane (Si4H10). Material layer stacks, semiconductor processing systems, and computer program products are also described.
    Type: Application
    Filed: December 11, 2023
    Publication date: June 20, 2024
    Inventors: Omar Elleuch, Yanfu Lu, Caleb Miskin, Alexandros Demos
  • Publication number: 20240175138
    Abstract: Systems and methods controlling the pressure differential between two sealed chambers connected by a gate valve in preparation for a gate valve opening event. Such systems and methods may adjust gas pressure in at least one of the chambers, if needed, until the pressure differential between the two chambers is at a predetermined pressure differential level. In some more specific examples, one chamber may constitute a substrate handling chamber, the other chamber may constitute a reaction chamber (e.g., for depositing one or more layers on a surface of a substrate), and the gate valve opening event may allow a substrate to be transferred from one chamber to the other (e.g., from the reaction chamber into the substrate handling chamber).
    Type: Application
    Filed: November 22, 2023
    Publication date: May 30, 2024
    Inventors: Fan Gao, Peipei Gao, Xing Lin, Arun Murali, Gregory Deye, Frederick Aryeetey, Amir Kajbafvala, Caleb Miskin, Alexandros Demos
  • Patent number: 11959173
    Abstract: A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.
    Type: Grant
    Filed: March 17, 2022
    Date of Patent: April 16, 2024
    Assignee: ASM IP Holding B.V.
    Inventors: Amir Kajbafvala, Yanfu Lu, Robinson James, Caleb Miskin