Abstract: Methods, systems, and devices supporting active fingerprinting for transport layer security (TLS) servers are described. In some systems, a client device may transmit a same set of client hello messages to each TLS server. The client device may receive a set of server hello messages in response to the standard set of client hello messages based on the contents of each client hello message. For example, a server hello message may indicate a selected cipher suite, TLS protocol version, and set of extensions in response to the specific information included in a client hello message. The client device may generate a hash value (e.g., a fuzzy hash) based on the set of server hello messages received from a TLS server. By comparing the hash values generated for different TLS servers, the client device may determine whether the TLS configurations for the different TLS servers are the same or different.

Abstract: Methods, systems, and devices supporting active fingerprinting for transport layer security (TLS) servers are described. In some systems, a client device may transmit a same set of client hello messages to each TLS server. The client device may receive a set of server hello messages in response to the standard set of client hello messages based on the contents of each client hello message. For example, a server hello message may indicate a selected cipher suite, TLS protocol version, and set of extensions in response to the specific information included in a client hello message. The client device may generate a hash value (e.g., a fuzzy hash) based on the set of server hello messages received from a TLS server. By comparing the hash values generated for different TLS servers, the client device may determine whether the TLS configurations for the different TLS servers are the same or different.

Abstract: Methods, systems, and devices supporting active fingerprinting for transport layer security (TLS) servers are described. In some systems, a client device may transmit a same set of client hello messages to each TLS server. The client device may receive a set of server hello messages in response to the standard set of client hello messages based on the contents of each client hello message. For example, a server hello message may indicate a selected cipher suite, TLS protocol version, and set of extensions in response to the specific information included in a client hello message. The client device may generate a hash value (e.g., a fuzzy hash) based on the set of server hello messages received from a TLS server. By comparing the hash values generated for different TLS servers, the client device may determine whether the TLS configurations for the different TLS servers are the same or different.

Abstract: A sense amplifier includes four sub-circuits: pre-charge, sense enable, sense output, and buffer. The pre-charge sub-circuit provides a voltage between zero volts and the positive power supply (denoted VDD) to the sense enable sub-circuit. The sense enable sub-circuit is configured to adjust the received voltage based on the sensed value of bit lines and sends the adjusted voltage to the sense output sub-circuit. The sense output sub-circuit removes interference, inverts and amplifies the adjusted voltage, and sends an output voltage to the buffer sub-circuit. The buffer sub-circuit amplifies the output voltage of the sense output sub-circuit and provides it to an output bus.

Abstract: A sense amplifier includes four sub-circuits: pre-charge, sense enable, sense output, and buffer. The pre-charge sub-circuit provides a voltage between zero volts and the positive power supply (denoted VDD) to the sense enable sub-circuit. The sense enable sub-circuit is configured to adjust the received voltage based on the sensed value of bit lines and sends the adjusted voltage to the sense output sub-circuit. The sense output sub-circuit removes interference, inverts and amplifies the adjusted voltage, and sends an output voltage to the buffer sub-circuit. The buffer sub-circuit amplifies the output voltage of the sense output sub-circuit and provides it to an output bus.

Abstract: A sense amplifier includes four sub-circuits: pre-charge, sense enable, sense output, and buffer. The pre-charge sub-circuit provides a voltage between zero volts and the positive power supply (denoted VDD) to the sense enable sub-circuit. The sense enable sub-circuit is configured to adjust the received voltage based on the sensed value of bit lines and sends the adjusted voltage to the sense output sub-circuit. The sense output sub-circuit removes interference, inverts and amplifies the adjusted voltage, and sends an output voltage to the buffer sub-circuit. The buffer sub-circuit amplifies the output voltage of the sense output sub-circuit and provides it to an output bus.

Abstract: A sense amplifier includes four sub-circuits: pre-charge, sense enable, sense output, and buffer. The pre-charge sub-circuit provides a voltage between zero volts and the positive power supply (denoted VDD) to the sense enable sub-circuit. The sense enable sub-circuit is configured to adjust the received voltage based on the sensed value of bit lines and sends the adjusted voltage to the sense output sub-circuit. The sense output sub-circuit removes interference, inverts and amplifies the adjusted voltage, and sends an output voltage to the buffer sub-circuit. The buffer sub-circuit amplifies the output voltage of the sense output sub-circuit and provides it to an output bus.

Abstract: Some embodiments regard a circuit comprising a pre-charge circuit and a latch circuit. The pre-charge circuit charges a voltage node to a pre-determined voltage level based on which the latch circuit generates a feedback signal to stop the pre-charge circuit from charging.

Abstract: Some embodiments regard a circuit comprising a pre-charge circuit and a latch circuit. The pre-charge circuit charges a voltage node to a pre-determined voltage level based on which the latch circuit generates a feedback signal to stop the pre-charge circuit from charging.

Abstract: Some embodiments regard a circuit comprising a pre-charge circuit and a latch circuit. The pre-charge circuit charges a voltage node to a pre-determined voltage level based on which the latch circuit generates a feedback signal to stop the pre-charge circuit from charging.

Abstract: Some embodiments regard a circuit comprising a pre-charge circuit and a latch circuit. The pre-charge circuit charges a voltage node to a pre-determined voltage level based on which the latch circuit generates a feedback signal to stop the pre-charge circuit from charging.

Abstract: A method of operating a circuit includes providing a charge pump comprising an input and an output; charge-pumping an output voltage at the output of the charge pump to a high voltage; and discharging the output of the charge pump to power supply voltage VDD.

Abstract: Self-aligned split-gate NAND flash memory cell array and process of fabrication in which rows of self-aligned split-gate cells are formed between a bit line diffusion and a common source diffusion in the active area of a substrate. Each cell has control and floating gates which are stacked and self-aligned with each other, and erase and select gates which are split from and self-aligned with the stacked gates, with select gates at both ends of each row which partially overlap the bit line the source diffusions. The channel regions beneath the erase gates are heavily doped to reduce the resistance of the channel between the bit line and source diffusions, and the floating gates are surrounded by the other gates in a manner which provides significantly enhanced high voltage coupling to the floating gates from the other gates.

Abstract: Self-aligned split-gate NAND flash memory cell array and process of fabrication in which rows of self-aligned split-gate cells are formed between a bit line diffusion and a common source diffusion in the active area of a substrate. Each cell has control and floating gates which are stacked and self-aligned with each other, and erase and select gates which are split from and self-aligned with the stacked gates, with select gates at both ends of each row which partially overlap the bit line the source diffusions. The channel regions beneath the erase gates are heavily doped to reduce the resistance of the channel between the bit line and source diffusions, and the floating gates are surrounded by the other gates in a manner which provides significantly enhanced high voltage coupling to the floating gates from the other gates.

Abstract: Self-aligned split-gate NAND flash memory cell array and process of fabrication in which rows of self-aligned split-gate cells are formed between a bit line diffusion and a common source diffusion in the active area of a substrate. Each cell has control and floating gates which are stacked and self-aligned with each other, and erase and select gates which are split from and self-aligned with the stacked gates, with select gates at both ends of each row which partially overlap the bit line the source diffusions. The channel regions beneath the erase gates are heavily doped to reduce the resistance of the channel between the bit line and source diffusions, and the floating gates are surrounded by the other gates in a manner which provides significantly enhanced high voltage coupling to the floating gates from the other gates.