Abstract: Apparatuses and methods for adjusting a power capability of a system is described. In an example, a system can include an antenna array and a beamformer connected to the antenna array. The beamformer can include a communication channel. The system can further include a first power converter that can be configured to convert a supply voltage to a first regulated voltage. The first power converter can apply the first regulated voltage to the beamformer. The system can further include a second power converter that can be configured to convert the supply voltage to a second regulated voltage different from the first regulated voltage. The second power converter can apply the second regulated voltage to a power amplifier in the communication channel to adjust a maximum power capability of the power amplifier.

Abstract: Apparatuses and methods for adjusting a power capability of a system is described. In an example, a system can include an antenna array and a beamformer connected to the antenna array. The beamformer can include a communication channel. The system can further include a first power converter that can be configured to convert a supply voltage to a first regulated voltage. The first power converter can apply the first regulated voltage to the beamformer. The system can further include a second power converter that can be configured to convert the supply voltage to a second regulated voltage different from the first regulated voltage. The second power converter can apply the second regulated voltage to a power amplifier in the communication channel to adjust a maximum power capability of the power amplifier.

Abstract: Embodiments of the present disclosure include a bias circuit for generating bias voltages to stacked transistors. In one embodiment, stacked transistors are coupled between an input transistor and an output node. A modulated power supply voltage and an input signal produce a voltage at the output node. The modulated power supply voltage is provided as an input to the bias circuit. Bias voltages are generated that change with the power supply voltage. In one embodiment, particular transistors in the stack are biased so that their control terminals are effectively short circuited when the power supply voltage is reduced.

Abstract: Embodiments of the present disclosure include a bias circuit for generating bias voltages to stacked transistors. In one embodiment, stacked transistors are coupled between an input transistor and an output node. A modulated power supply voltage and an input signal produce a voltage at the output node. The modulated power supply voltage is provided as an input to the bias circuit. Bias voltages are generated that change with the power supply voltage. In one embodiment, particular transistors in the stack are biased so that their control terminals are effectively short circuited when the power supply voltage is reduced.