Abstract: A method and apparatus for providing an interactive video viewing experience for a user. The user has an internet enabled device and launches an interactive watching application (IWA) on his device. Using the IWA, he brings up a list of available video content and selects a video for viewing. As the user is viewing the video, an overlay display appears on the lower portion of the screen and overlays a portion of the still running video. The overlay displays “Touch for information regarding this program.” When the user touches the display, the video pauses and a web page containing information regarding or relating to the program or its subject matter is displayed. Utilizing various similar overlays, an interactive video viewing experience is provided to the user. The experience can include various overlays and associated experiences, such as obtaining information regarding new characters or consumer products as they appear.

Abstract: An apparatus includes a manifold plate-like structure having two end regions and an opening located in the recessed region configured to allow fluid flow therethrough and a clamping device. The clamping device includes a first clamping block and a first mechanical fastener to couple the first clamping block and the manifold. The apparatus also includes a vibratory separator including a basket having support structure therein, the manifold coupled to the support structure with a clamping device. A pan is disposed above the manifold and coupled to the manifold and a screen is disposed on the pan. A pressure differential device is coupled to the manifold and configured to provide a pressure differential across the screen. A method includes coupling the manifold to the support structure, disposing the pan on the support structure, and coupling the pan to the manifold.

Abstract: An apparatus includes a manifold plate-like structure having two end regions and an opening located in the recessed region configured to allow fluid flow therethrough and a clamping device. The clamping device includes a first clamping block and a first mechanical fastener to couple the first clamping block and the manifold. The apparatus also includes a vibratory separator including a basket having support structure therein, the manifold coupled to the support structure with a clamping device. A pan is disposed above the manifold and coupled to the manifold and a screen is disposed on the pan. A pressure differential device is coupled to the manifold and configured to provide a pressure differential across the screen. A method includes coupling the manifold to the support structure, disposing the pan on the support structure, and coupling the pan to the manifold.

Abstract: A method and apparatus for providing an interactive video viewing experience for a user. The user has an internet enabled device and launches an interactive watching application (IWA) on his device. Using the IWA, he brings up a list of available video content and selects a video for viewing. As the user is viewing the video, an overlay display appears on the lower portion of the screen and overlays a portion of the still running video. The overlay displays “Touch for information regarding this program.” When the user touches the display, the video pauses and a web page containing information regarding or relating to the program or its subject matter is displayed. Utilizing various similar overlays, an interactive video viewing experience is provided to the user. The experience can include various overlays and associated experiences, such as obtaining information regarding new characters or consumer products as they appear.

Abstract: A method and apparatus for providing an interactive video viewing experience for a user. The user has an internet enabled device and launches an interactive watching application (IWA) on his device. Using the IWA, he brings up a list of available video content and selects a video for viewing. As the user is viewing the video, an overlay display appears on the lower portion of the screen and overlays a portion of the still running video. The overlay displays “Touch for information regarding this program.” When the user touches the display, the video pauses and a web page containing information regarding or relating to the program or its subject matter is displayed. Utilizing various similar overlays, an interactive video viewing experience is provided to the user. The experience can include various overlays and associated experiences, such as obtaining information regarding new characters or consumer products as they appear.

Abstract: In accordance with an embodiment, a measurement system includes a measurement instrument, a controller physically connected to the measurement instrument, and a portable user interface wirelessly connected to the controller. The portable user interface is operable to remotely monitor and control the measurement instrument.

Abstract: A method and apparatus for providing an interactive video viewing experience for a user. The user has an internet enabled device and launches an interactive watching application (IWA) on his device. Using the IWA, he brings up a list of available video content and selects a video for viewing. As the user is viewing the video, an overlay display appears on the lower portion of the screen and overlays a portion of the still running video. The overlay displays “Touch for information regarding this program.” When the user touches the display, the video pauses and a web page containing information regarding or relating to the program or its subject matter is displayed. Utilizing various similar overlays, an interactive video viewing experience is provided to the user. The experience can include various overlays and associated experiences, such as obtaining information regarding new characters or consumer products as they appear.

Abstract: A susceptor is disclosed for minimizing or eliminating thermal gradients that affect a substrate wafer during epitaxial growth. The susceptor includes a first susceptor portion including a surface for receiving a semiconductor substrate wafer thereon, and a second susceptor portion facing the substrate receiving surface and spaced from the substrate-receiving surface. The spacing is sufficiently large to permit the flow of gases therebetween for epitaxial growth on a substrate on the surface, while small enough for the second susceptor portion to heat the exposed face of a substrate to substantially the same temperature as the first susceptor portion heats the face of a substrate that is in direct contact with the substrate-receiving surface.

Abstract: Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

Abstract: Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

Abstract: A method of forming a bipolar device includes forming at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide on a substrate. Stacking faults that grow under forward operation of the device are segregated from at least one of the interfaces between the active region and the remainder of the device. The method of forming bipolar devices includes growing at least one of the epitaxial layers to a thickness greater than the minority carrier diffusion length in that layer. The method also increases the doping concentration of epitaxial layers surrounding the drift region to decrease minority carrier lifetimes therein.

Abstract: A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system and in the absence of a solid silicon carbide source, by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

Abstract: A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.

Abstract: A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system. The method includes positioning a seed crystal on the seed holder with a low porosity backing material that provides a vapor barrier to silicon carbide sublimation from the seed and that minimizes the difference in thermal conductivity between the seed and the backing material to minimize or eliminate temperature differences across the seed and likewise minimize or eliminate vapor transport from the rear of the seed that would otherwise initiate and propagate defects in the growing crystal.

Abstract: A bipolar device has at least one p?type layer of single crystal silicon carbide and at least one n?type layer of single crystal silicon carbide, wherein those portions of those stacking faults that grow under forward operation are segregated from at least one of the interfaces between the active region and the remainder of the device.

Abstract: A method of forming a bipolar device includes forming at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide on a substrate. Stacking faults that grow under forward operation of the device are segregated from at least one of the interfaces between the active region and the remainder of the device. The method of forming bipolar devices includes growing at least one of the epitaxial layers to a thickness greater than the minority carrier diffusion length in that layer. The method also increases the doping concentration of epitaxial layers surrounding the drift region to decrease minority carrier lifetimes therein.

Abstract: Methods of forming high voltage silicon carbide power devices utilize high purity silicon carbide drift layers that are derived from high purity silicon carbide wafer material, instead of prohibitively costly epitaxially grown silicon carbide layers. The methods include forming both minority carrier and majority carrier power devices that can support greater than 10 kV blocking voltages, using drift layers having thicknesses greater than about 100 um. The drift layers are formed as boule-grown silicon carbide drift layers having a net n-type dopant concentration therein that is less than about 2×1015 cm?3. These n-type dopant concentrations can be achieved using neutron transmutation doping (NTD) techniques.

Abstract: The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing silicon carbide crystal by providing an ambient atmosphere of hydrogen in the growth chamber. The hydrogen atoms, in effect, block, reduce, or otherwise hinder the incorporation of nitrogen atoms at the surface of the growing crystal.

Abstract: A susceptor is disclosed for minimizing or eliminating thermal gradients that affect a substrate wafer during epitaxial growth. The susceptor comprises a first susceptor portion including a surface for receiving a semiconductor substrate wafer thereon, and a second susceptor portion facing the substrate-receiving surface and spaced from the substrate-receiving surface. The spacing is sufficiently large to permit the flow of gases therebetween for epitaxial growth on a substrate on the surface, while small enough for the second susceptor portion to heat the exposed face of a substrate to substantially the same temperature as the first susceptor portion heats the face of a substrate that is in direct contact with the substrate-receiving surface.