Patents by Inventor Calvin Choi

Calvin Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with trench-like feed-throughs
    Patent number: 10032901
    Abstract: A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.
    Type: Grant
    Filed: April 5, 2016
    Date of Patent: July 24, 2018
    Assignee: Vishay-Siliconix
    Inventors: Deva Pattanayak, King Owyang, Mohammed Kasem, Kyle Terrill, Reuven Katraro, Kuo-In Chen, Calvin Choi, Qufei Chen, Ronald Wong, Kam Hong Lui, Robert Xu
  • SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS
    Publication number: 20170025527
    Abstract: A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.
    Type: Application
    Filed: April 5, 2016
    Publication date: January 26, 2017
    Inventors: Deva Pattanayak, King Owyang, Mohammed Kasem, Kyle Terrill, Reuven Katraro, Kuo-In Chen, Calvin Choi, Qufei Chen, Ronald Wong, Kam Hong Lui, Robert Xu
  • Semiconductor device with trench-like feed-throughs
    Patent number: 9306056
    Abstract: A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.
    Type: Grant
    Filed: October 30, 2009
    Date of Patent: April 5, 2016
    Assignee: Vishay-Siliconix
    Inventors: Deva Pattanayak, King Owyang, Mohammed Kasem, Kyle Terrill, Reuven Katraro, Kuo-In Chen, Calvin Choi, Qufei Chen, Ronald Wong, Kam Hong Lui, Robert Xu
  • SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS
    Publication number: 20110101525
    Abstract: A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.
    Type: Application
    Filed: October 30, 2009
    Publication date: May 5, 2011
    Applicant: VISHAY-SILICONIX
    Inventors: Deva Pattanayak, King Owyang, Mohammed Kasem, Kyle Terrill, Reuven Katraro, Kuo-In Chen, Calvin Choi, Qufei Chen, Ronald Wong, Kam Hong Lui, Robert Xu
  • Contact probe utilizing conductive meltable probing material
    Patent number: 5585736
    Abstract: A contact probe for semiconductor in-line process monitoring or device measurement is disclosed in this invention which uses gallium, indium or any low-melting and low-vapor pressure electrically conductive alloy as a contact probing material. The probe can be used to directly measure mobile ion density without requiring the formation of aluminum dots on the semiconductor wafers. The safety issues caused by high temperature operation are also eliminated. The time requirement for process-equipment qualification is significantly reduced because the preparation time for aluminum dot formation is now eliminated. In comparison to the mercury probes, since in this invention, the contact is formed at high temperature thus leading to better contacts between the probe and the wafer, which in turn resulting in higher measurement accuracy. Furthermore, the conventional pin slip problem during elevated temperature stress is eliminated by the use of the contact probe of this invention.
    Type: Grant
    Filed: November 29, 1994
    Date of Patent: December 17, 1996
    Assignee: Fwu-Iuan Hshieh
    Inventors: Fwu-Iuan Hshieh, Calvin Choi, Yoeh-Se Ho, Jimmy S. X. Weang