Abstract: An improved antifuse design has been achieved by using a structure comprising a region of heavily doped N type silicon coated with a layer of ONO (oxide-nitride-oxide). Top contact to the ONO is made through a layer of tungsten silicide sandwiched between two layers of N type polysilicon. A cost effective method for manufacturing said antifuse structure is described.

Abstract: A method for forming an LDD structure using a polymeric spacer on a polysilicon or a polycide gate is described. A layer of gate silicon oxide is provided over the surface of a semiconductor substrate. A polysilicon or polycide layer is provided overlying the gate silicon oxide layer. The polysilicon or polycide layer is covered with a photoresist layer which is patterned to form a mask. The polysilicon or polycide layer is etched away where it is not covered by the mask to form gate electrodes whereby a polymer is formed on the sidewalls of the mask and the gate electrodes. First ions are implanted into the semiconductor substrate not covered by the mask and the polymer to form source and drain regions. The polymer and mask are removed.

Abstract: An improved antifuse design has been achieved by using a structure including a region of heavily doped N type silicon coated with a layer of ONO (oxide-nitride-oxide). Top contact to the ONO is made through a layer of tungsten silicide sandwiched between two layers of N type polysilicon. A cost effective method for manufacturing said antifuse structure is described.