Abstract: A system and method to select a gate to be modified as a test isolation gate is disclosed. In a particular embodiment, a method includes, after a layout phase of generating a design of a circuit, receiving timing information related to the design of the circuit. The method also includes selectively identifying at least one gate of a combinational logic portion of the design of the circuit to be modified to respond to a test enable signal, the at least one gate identified at least partially based on the timing information. The method also includes modifying the at least one gate. The at least one modified gate is fixed at a constant level during a test mode and is dynamically changeable during a functional mode of operation of the circuit.

Abstract: A system and method to select a gate to be modified as a test isolation gate is disclosed. In a particular embodiment, a method includes, after a layout phase of generating a design of a circuit, receiving timing information related to the design of the circuit. The method also includes selectively identifying at least one gate of a combinational logic portion of the design of the circuit to be modified to respond to a test enable signal, the at least one gate identified at least partially based on the timing information. The method also includes modifying the at least one gate. The at least one modified gate is fixed at a constant level during a test mode and is dynamically changeable during a functional mode of operation of the circuit.

Abstract: Word line stress is used to narrow the distribution of threshold voltages after an erase of an array of memory cells. One embodiment of the invention provides a method for erasing an array including a standard erase technique followed by extra erase pulses to create a margin between threshold voltages of the cells and the erase verify level, then applying word line stress to narrow the distribution of threshold voltages. Another embodiment in addition includes verifying that all of the memory cells are still erased after applying word line stress and if any of the memory cells were over-stressed and are not erased, repeating the method but using less word line stress. The erase methods according to embodiments of the present invention can be implemented by an external CPU which executes an erase program or by circuitry embedded in an EEPROM.