Abstract: Architectures of millimeter-wave (mm-wave) fully-integrated frequency-division duplex (FDD) transmitting-receiving (T/R) front-end (FE) modules include a duplexer (DUX), power amplifier (PA), and low noise amplifier (LNA) on a single semiconductor substrate to facilitate the development of system on a chip (SoC) for mm-wave 5th Generation (5G) wireless communications applications. The first FE module adopts a passive DUX consisting of Wilkinson power divider and ground-center-tap transformer to achieve high isolation between PA output and LNA inputs. Another FE module combines the advantages of passive DUX and power-efficient cancellation circuits to accomplish high TX-RX isolation and low noise performance at the same time. The DUX can stand alone as a single unit in a system and is used together with external PA and LNA provided in the system, or it can include its own internal PA and LNA to form a DUX FE module.

Abstract: Architectures of millimeter-wave (mm-wave) fully-integrated frequency-division duplex (FDD) transmitting-receiving (T/R) front-end (FE) modules include a duplexer (DUX), power amplifier (PA), and low noise amplifier (LNA) on a single semiconductor substrate to facilitate the development of system on a chip (SoC) for mm-wave 5th Generation (5G) wireless communications applications. The first FE module adopts a passive DUX consisting of Wilkinson power divider and ground-center-tap transformer to achieve high isolation between PA output and LNA inputs. Another FE module combines the advantages of passive DUX and power-efficient cancellation circuits to accomplish high TX-RX isolation and low noise performance at the same time. The DUX can stand alone as a single unit in a system and is used together with external PA and LNA provided in the system, or it can include its own internal PA and LNA to form a DUX FE module.

Abstract: Architectures of millimeter wave fully-integrated frequency-division duplex (FDD) transmitting-receiving (T/R) front-end (FE) modules include a duplexer (DUX), power amplifier (PA), and low noise amplifier (LNA) on a single semiconductor substrate to facilitate the development of system on a chip (SoC) for millimeter wave 5G wireless and next-generation communications applications. The entire balanced DUX module implements TX signals in differential mode, and RX signals in single-ended mode. LNA input is located at the center of a symmetrical plane of the entire FE module, resulting in an inherent ultra-high isolation between the differential PA output ports and the LNA input port across a ultra-wide bandwidth. The DUX can stand alone as a single unit in a system and is used together with external PA and LNA provided in the system, or it can include its own internal PA and LNA to form a DUX FE module.

Abstract: Architectures of millimeter-wave (mm-wave) fully-integrated frequency-division duplex (FDD) transmitting-receiving (T/R) front-end (FE) modules include a duplexer (DUX), power amplifier (PA), and low noise amplifier (LNA) on a single semiconductor substrate to facilitate the development of system on a chip (SoC) for mm-wave 5th Generation (5G) wireless communications applications. The first FE module adopts a passive DUX consisting of Wilkinson power divider and ground-center-tap transformer to achieve high isolation between PA output and LNA inputs. Another FE module combines the advantages of passive DUX and power-efficient cancellation circuits to accomplish high TX-RX isolation and low noise performance at the same time. The DUX can stand alone as a single unit in a system and is used together with external PA and LNA provided in the system, or it can include its own internal PA and LNA to form a DUX FE module.

Abstract: An amplifier for signal amplification, the amplifier comprising: a signal input arrangement; a signal output arrangement; a first transistor; a second transistor; and a third transistor, wherein: the first, second and third transistors are coupled to one another to form a transconductance cell, the transconductance cell is coupled to the signal input arrangement and the signal output arrangement, and the transconductance cell is operable to receive a first signal from the signal input arrangement, amplify the first signal and output an amplified first signal to the signal output arrangement. There is also disclosed a receiver incorporating the amplifier and methods of operating the amplifier.

Abstract: An amplifier for signal amplification, the amplifier comprising: a signal input arrangement; a signal output arrangement; a first transistor (Q1); a second transistor (Q2); and a third transistor (Q3), wherein: the first (Q1), second (Q2) and third (Q3) transistors are coupled to one another to form a transconductance cell, the transconductance cell is coupled to the signal input arrangement and the signal output arrangement, and the transconductance cell is operable to receive a first signal from the signal input arrangement, amplify the first signal and output an amplified first signal to the signal output arrangement. There is also disclosed a receiver incorporating the amplifier and methods of operating the amplifier.