Abstract: A ferrule-less optical backplane connector assembly includes a substrate having at least a pair of optical guide receiving structures formed therein, the pair of optical guide receiving structures further being formed at substantially a right angle with respect to one another so as to guide a corresponding first and second optical guide into optical alignment with one another.

Abstract: An apparatus and method for forming a staircase arrangement for the connection of optical waveguides between a card and backplane. A card having optical waveguides and electrical conductors embedded in the card has an edge ending in a staircase arrangement with optical fiber-ribbons protruding from the edge. A guidance structure is connected to the edge and contains channels to guide and align the optical fiber-ribbons. A backplane having embedded optical waveguides and electrical conductors also has an edge ending in a staircase arrangement with a guidance structure connected to the edge and tapered openings which receive and guide the optical fiber-ribbons into close proximity with the optical waveguides and forming a staircase arrangement of connected waveguides between a card and backplane.

Abstract: An apparatus and method for forming a staircase arrangement for the connection of optical waveguides between a card and backplane. A card having optical waveguides and electrical conductors embedded in the card has an edge ending in a staircase arrangement with optical fiber-ribbons protruding from the edge. A guidance structure is connected to the edge and contains channels to guide and align the optical fiber-ribbons. A backplane having embedded optical waveguides and electrical conductors also has an edge ending in a staircase arrangement with a guidance stricture connected to the edge and tapered openings which receive and guide the optical fiber-ribbons into close proximity with the optical waveguides and forming a staircase arrangement of connected waveguides between a card and backplane.

Abstract: A ferrule-less optical backplane connector assembly includes a substrate having at least a pair of optical guide receiving structures formed therein, the pair of optical guide receiving structures further being formed at substantially a right angle with respect to one another so as to guide a corresponding first and second optical guide into optical alignment with one another.

Abstract: A connector system for fiber optic cables employs an interface module located between the cable connector and the system component receiving the optical signals that converts the single-mode light on the cable to a mixture of modes that fill a multi-mode waveguide on the system board, thereby reducing modal noise and differential mode delay. A particular connector produces an electrical signal reflecting whether the optical connection is within specifications.

Abstract: A thin transition-metal based scattering layer of a mask blank for use in EPL systems is formed by providing the thin transition-metal scattering layer directly over membrane layers on a lot of substrates, thereby forming a continuous contact between the single transition metal-based scattering layer and the membrane layer. Preferably, the single transition metal-based scattering layer is a single tantalum-silicon composite scattering layer having a stoichiometry of TaxSi. The deposition parameters for depositing the thin transition-metal based scattering layer are adjusted to provide the scattering layer uniformly over all substrates within the lot. A first substrate from the lot of substrates is then selected, an initial stress measurement of the scattering layer is determined and then the substrate is annealed at a first temperature.

Abstract: A method of preparing an x-ray mask comprising providing a substrate, and applying sequentially to a surface of the substrate i) an etch stop layer resistant to etchant for an x-ray absorber, and ii) an x-ray absorber layer. The method then includes removing a portion of the substrate below the layers to create an active region of the substrate above the removed portion of the substrate and an inactive region over remaining portions of the substrate, applying a resist layer above the absorber layer, and exposing a portion of the resist layer using electron beam irradiation and developing the resist layer to form a latent mask image over the active region of the substrate.

Abstract: A thin transition-metal based scattering layer of a mask blank for use in EPL systems is formed by providing the thin transition-metal scattering layer directly over membrane layers on a lot of substrates, thereby forming a continuous contact between the single transition metal-based scattering layer and the membrane layer. Preferably, the single transition metal-based scattering layer is a single tantalum-silicon composite scattering layer having a stoichiometry of TaxSi. The deposition parameters for depositing the thin transition-metal based scattering layer are adjusted to provide the scattering layer uniformly over all substrates within the lot. A first substrate from the lot of substrates is then selected, an initial stress measurement of the scattering layer is determined and then the substrate is annealed at a first temperature.

Abstract: A method of preparing an x-ray mask comprising providing a substrate, and applying sequentially to a surface of the substrate i) an etch stop layer resistant to etchant for an x-ray absorber, and ii) an x-ray absorber layer. The method then includes removing a portion of the substrate below the layers to create an active region of the substrate above the removed portion of the substrate and an inactive region over remaining portions of the substrate, applying a resist layer above the absorber layer, and exposing a portion of the resist layer using electron beam irradiation and developing the resist layer to form a latent mask image over the active region of the substrate.

Abstract: A method of preparing an x-ray mask comprising providing a substrate, and applying sequentially to a surface of the substrate i) an etch stop layer resistant to etchant for an x-ray absorber, and ii) an x-ray absorber layer. The method then includes removing a portion of the substrate below the layers to create an active region of the substrate above the removed portion of the substrate and an inactive region over remaining portions of the substrate, applying a resist layer above the absorber layer, and exposing a portion of the resist layer using electron beam irradiation and developing the resist layer to form a latent mask image over the active region of the substrate.

Abstract: A stencil or scatterer mask for use with charged particle beam lithography such as projection electron-beam lithography comprises a membrane layer of a material having a Young's modulus of at least about 400 GPa and support struts supporting a surface of the membrane. The struts form and surrounding a plurality of discrete membrane areas of different aspect ratios aligned to design regions of an integrated circuit. The discrete membrane areas have different aspect ratios range from about 1:1 to about 12:1, and the discrete membrane areas have different size surface areas. The membrane is preferably silicon carbide, diamond, diamond-like carbon, amorphous carbon, carbon nitride or boron nitride. When used in scatterer masks, the ratio of discrete membrane area to membrane thickness is at least about 0.18 mm2/nm. When used in stencil masks, the ratio of discrete membrane area to membrane thickness is at least about 1.0 mm2/nm.